Abstract

A monolithic CMOS compatible process has been developed to realize vertically integrated devices in silicon. The method involves the implantation of an oxygen into a patterned silicon substrate to form buried guiding structures. These buried devices are separated from a surface silicon layer by an intervening layer of silicon dioxide formed through the implantation process. Photolithography and etching is used to define devices on the surface silicon layer. The method has been utilized to realize the vertically coupled microdisk resonators and a variety of microresonator-based integrated optical elements. A new method for extraction of the unloaded Q of a cavity from its measured spectrum is also described.

© 2006 IEEE

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