Abstract

A polarization-independent high-efficiency edge-illuminated refracting-facet photodiode (RFPD) with a uni-traveling-carrier (UTC) structure has been developed. The efficiency is maximized by using a ring-shaped electrode, and the polarization dependence is minimized by designing the layers so that the interferences between the lights reflected from the different interfaces compensate each other. The fabricated RF-UTC-PD shows a responsivity as high as 1.0 A/W with a polarization dependence of less than 0.2 dB. A large 3-dB bandwidth of over 50 GHz at a high operation current of 20 mA is also observed.

© 2006 IEEE

PDF Article

References

  • View by:
  • |
  • |

  1. T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, T. Furuta, "Uni-traveling-carrier photodiodes," Proc. Tech. Dig. Ultrafast Electron. and Optoelectron. (1997) pp. 83-87.
  2. Y. Miyamoto, M. Yoneyama, K. Hagimoto, T. Ishibashi, N. Shimizu, "40 Gb/s high sensitivity optical receiver with uni-traveling-carrier photodiode acting as a decision IC driver," Electron Lett. 34, 214-215 (1998).
  3. H. Ito, T. Furuta, T. Ishibashi, "High-speed and high-output uni-traveling-carrier photodiodes," IEICE Trans. Electron. E84-C, 1448-1454 (2001).
  4. H. Fukano, Y. Muramoto, Y. Matsuoka, "High-speed and high-output voltage edge-illuminated refracting-facet photodiode," Electron Lett. 35, 1581-1582 (1999).
  5. H. Fukano, Y. Muramoto, K. Takahata, Y. Matsuoka, "High efficiency edge-illuminated uni-traveling-carrier-structure refracting-facet photodiode," Electron Lett. 35, 1664-1665 (1999).
  6. H. Fukano, Y. Matsuoka, "A low-cost edge-illuminated refracting-facet photodiode module with large bandwidth and high responsivity," J. Lightw. Technol. 18, 79-83 (2000).
  7. J. E. Bowers, C. A. Burrus, "Ultrawide-band long-wavelength p-i-n photodetectors," J. Lightw. Technol. LT-5, 1339-1350 (1987).
  8. N. Shimizu, K. Mori, T. Ishibashi, Y. Yamabayashi, "Quantum efficiency of InP/InGaAs uni-traveling-carrier photodiodes at 1.55โ€“1.7 $\mu\hbox{m}$ measured using supercontinuum generation in optical fiber," Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes 38, 2573-2578 (1999).
  9. N. Shimizu, N. Watanabe, T. Furuta, T. Ishibashi, "Improved response of uni-traveling-carrier photodiodes by carrier injection," Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes 37, 1424-1426 (1998).

2001 (1)

H. Ito, T. Furuta, T. Ishibashi, "High-speed and high-output uni-traveling-carrier photodiodes," IEICE Trans. Electron. E84-C, 1448-1454 (2001).

2000 (1)

H. Fukano, Y. Matsuoka, "A low-cost edge-illuminated refracting-facet photodiode module with large bandwidth and high responsivity," J. Lightw. Technol. 18, 79-83 (2000).

1999 (3)

H. Fukano, Y. Muramoto, Y. Matsuoka, "High-speed and high-output voltage edge-illuminated refracting-facet photodiode," Electron Lett. 35, 1581-1582 (1999).

H. Fukano, Y. Muramoto, K. Takahata, Y. Matsuoka, "High efficiency edge-illuminated uni-traveling-carrier-structure refracting-facet photodiode," Electron Lett. 35, 1664-1665 (1999).

N. Shimizu, K. Mori, T. Ishibashi, Y. Yamabayashi, "Quantum efficiency of InP/InGaAs uni-traveling-carrier photodiodes at 1.55โ€“1.7 $\mu\hbox{m}$ measured using supercontinuum generation in optical fiber," Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes 38, 2573-2578 (1999).

1998 (2)

N. Shimizu, N. Watanabe, T. Furuta, T. Ishibashi, "Improved response of uni-traveling-carrier photodiodes by carrier injection," Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes 37, 1424-1426 (1998).

Y. Miyamoto, M. Yoneyama, K. Hagimoto, T. Ishibashi, N. Shimizu, "40 Gb/s high sensitivity optical receiver with uni-traveling-carrier photodiode acting as a decision IC driver," Electron Lett. 34, 214-215 (1998).

1987 (1)

J. E. Bowers, C. A. Burrus, "Ultrawide-band long-wavelength p-i-n photodetectors," J. Lightw. Technol. LT-5, 1339-1350 (1987).

Electron Lett. (3)

H. Fukano, Y. Muramoto, Y. Matsuoka, "High-speed and high-output voltage edge-illuminated refracting-facet photodiode," Electron Lett. 35, 1581-1582 (1999).

H. Fukano, Y. Muramoto, K. Takahata, Y. Matsuoka, "High efficiency edge-illuminated uni-traveling-carrier-structure refracting-facet photodiode," Electron Lett. 35, 1664-1665 (1999).

Y. Miyamoto, M. Yoneyama, K. Hagimoto, T. Ishibashi, N. Shimizu, "40 Gb/s high sensitivity optical receiver with uni-traveling-carrier photodiode acting as a decision IC driver," Electron Lett. 34, 214-215 (1998).

IEICE Trans. Electron. (1)

H. Ito, T. Furuta, T. Ishibashi, "High-speed and high-output uni-traveling-carrier photodiodes," IEICE Trans. Electron. E84-C, 1448-1454 (2001).

J. Lightw. Technol. (2)

H. Fukano, Y. Matsuoka, "A low-cost edge-illuminated refracting-facet photodiode module with large bandwidth and high responsivity," J. Lightw. Technol. 18, 79-83 (2000).

J. E. Bowers, C. A. Burrus, "Ultrawide-band long-wavelength p-i-n photodetectors," J. Lightw. Technol. LT-5, 1339-1350 (1987).

Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes (2)

N. Shimizu, K. Mori, T. Ishibashi, Y. Yamabayashi, "Quantum efficiency of InP/InGaAs uni-traveling-carrier photodiodes at 1.55โ€“1.7 $\mu\hbox{m}$ measured using supercontinuum generation in optical fiber," Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes 38, 2573-2578 (1999).

N. Shimizu, N. Watanabe, T. Furuta, T. Ishibashi, "Improved response of uni-traveling-carrier photodiodes by carrier injection," Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes 37, 1424-1426 (1998).

Other (1)

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, T. Furuta, "Uni-traveling-carrier photodiodes," Proc. Tech. Dig. Ultrafast Electron. and Optoelectron. (1997) pp. 83-87.

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.