Abstract

GaAs traveling-wave electrooptic (EO) modulators based on capacitively loaded coplanar strips (CPSs) have been extensively modeled, and near-optimal designs are presented. The modulator operates in a push-pull mode, and the electrodes are coupled capacitively in series via the doped under layer. The best design reported herein has asymmetric CPSs 2 cm long and generated a figure of merit of about 9.36 GHz/V. This figure of merit is an improvement by a factor of about 2.5 over the best design reported to date for this modulator architecture. Modulator bandwidths in the range of 40-70 GHz (3 dB electrical) are predicted for various designs; the corresponding optical bandwidths are in the range of 75-110 GHz (3 dB optical).

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  1. G. K. Gopalakrishnan, C. H. Bulmer, W. K. Burns, R. W. McElhanon and A. S. Greenblatt, "40 GHz, low half-wave voltage Ti:LiNbO3 intensity modulator", Electron. Lett., vol. 28, no. 9, pp. 826-827, Apr. 1992.
  2. K. Noguchi, O. Miyomi and H. Miyazawa, "Millimeter-wave Ti:LiNbO3 optical modulators", J. Lightw. Technol., vol. 16, no. 4, pp. 615-619, Apr. 1998.
  3. S.-J. Chang, C.-L. Tsai, Y.-B. Lin, J.-F. Liu and W.-S. Wang, "Improved electro-optic modulator with ridge structure in X-cut LiNbO3", J. Lightw. Technol., vol. 17, no. 5, pp. 843-847, May 1999.
  4. R. Madahushi, "Wide-band Ti:LiNbO3 optical modulator with low driving voltage", presented at the Optical Fiber Communication (OFC), San Jose, CA, Paper ThB3, 1996.
  5. W. K. Burns, M. M. Howerton, R. P. Moeller, A. S. Greenblatt and R. W. McElhanon, "Broad-band reflection traveling-wave LiNbO3 modulator", IEEE Photon. Technol. Lett., vol. 10, no. 6, pp. 805-806, Jun. 1998.
  6. J. B. Khurgin and J. U. Kang, "Ultrabroad-bandwidth electro-optic modulator based on a cascaded Bragg grating", Opt. Lett., vol. 25, no. 1, pp. 70-72, Jan. 2000.
  7. K. Wakita, K. Yoshino, I. Kotaka, S. Kondo and Y. Noguchi, "Blue chirp electroabsorption modulators with very thick quantum wells", IEEE Photon. Technol. Lett., vol. 8, no. 9, pp. 1169-1171, Sep. 1996.
  8. S. Irmscher, R. Lewen and U. Eriksson, "InP-InGaAsP high-speed traveling wave electroabsorption modulators with integrated termination resistors", IEEE Photon. Technol. Lett., vol. 14, no. 7, pp. 923-925, Jul. 2002.
  9. R. Spickermann, S. R. Sakamoto, M. G. Peters and N. Dagli, "GaAs/AlGaAs traveling wave electrooptic modulator with electrical bandwidth greater than 40 GHz", Electron. Lett., vol. 32, no. 12, pp. 1095-1096, Jun. <day>6</day>, 1996.
  10. R. G. Walker, "Electrooptic modulation at mm-wave frequencies in GaAs/AlGaAs guided wave devices", in Proc. IEEE/LEOS 8th Annu. Meeting, San Francisco, CA, Oct. 30-Nov. 2, 1995, pp. 118-119.
  11. S. R. Sakamoto, C. Ozturk, Y. T. Byun, J. Ko and N. Dagli, "Low loss substrate-removed (SURE) optical waveguides in GaAs/AlGaAs epitaxial layers embedded in organic polymers", IEEE Photon. Technol. Lett., vol. 10, no. 7, pp. 985-987, Jul. 1998.
  12. Y. Cui, "GaAs-based traveling wave electro-optic modulators", M.S. thesis, School of Information Technology and Engineering, Univ. Ottawa, Ottawa, ON, Canada, 2004.
  13. R. G. Walker, "High-speed III-V semiconductor intensity modulators", IEEE J. Quantum Electron., vol. 27, no. 3, pp. 654-667, Mar. 1991.
  14. R. G. Walker, "High-speed electrooptic modulation in GaAs/GaAlAs waveguide devices", J. Lightw. Technol., vol. LT-5, no. 10, pp. 1444-1453, Oct. 1987.
  15. R. E. Collin, Foundations for Microwave Engineering, New York: McGraw-Hill, 1992.
  16. "Sonnet User's Manual", Sonnet Software, Inc., Liverpool, NY,.
  17. T. G. Nguyen, A. Mitchell and Y. S. Visagathilagar, "Investigation of resonantly enhanced modulators on LiNbO3 using FEM and numerical optimization technique", J. Lightw. Technol., vol. 22, no. 2, pp. 526-533, Feb. 2004.
  18. S. Y. Wang and S. H. Lin, "High speed III-V electrooptic waveguide modulators at \Lambda = 1.3\ µm", J. Lightw. Technol., vol. 6, no. 6, pp. 758-771, Jun. 1988.

Other (18)

G. K. Gopalakrishnan, C. H. Bulmer, W. K. Burns, R. W. McElhanon and A. S. Greenblatt, "40 GHz, low half-wave voltage Ti:LiNbO3 intensity modulator", Electron. Lett., vol. 28, no. 9, pp. 826-827, Apr. 1992.

K. Noguchi, O. Miyomi and H. Miyazawa, "Millimeter-wave Ti:LiNbO3 optical modulators", J. Lightw. Technol., vol. 16, no. 4, pp. 615-619, Apr. 1998.

S.-J. Chang, C.-L. Tsai, Y.-B. Lin, J.-F. Liu and W.-S. Wang, "Improved electro-optic modulator with ridge structure in X-cut LiNbO3", J. Lightw. Technol., vol. 17, no. 5, pp. 843-847, May 1999.

R. Madahushi, "Wide-band Ti:LiNbO3 optical modulator with low driving voltage", presented at the Optical Fiber Communication (OFC), San Jose, CA, Paper ThB3, 1996.

W. K. Burns, M. M. Howerton, R. P. Moeller, A. S. Greenblatt and R. W. McElhanon, "Broad-band reflection traveling-wave LiNbO3 modulator", IEEE Photon. Technol. Lett., vol. 10, no. 6, pp. 805-806, Jun. 1998.

J. B. Khurgin and J. U. Kang, "Ultrabroad-bandwidth electro-optic modulator based on a cascaded Bragg grating", Opt. Lett., vol. 25, no. 1, pp. 70-72, Jan. 2000.

K. Wakita, K. Yoshino, I. Kotaka, S. Kondo and Y. Noguchi, "Blue chirp electroabsorption modulators with very thick quantum wells", IEEE Photon. Technol. Lett., vol. 8, no. 9, pp. 1169-1171, Sep. 1996.

S. Irmscher, R. Lewen and U. Eriksson, "InP-InGaAsP high-speed traveling wave electroabsorption modulators with integrated termination resistors", IEEE Photon. Technol. Lett., vol. 14, no. 7, pp. 923-925, Jul. 2002.

R. Spickermann, S. R. Sakamoto, M. G. Peters and N. Dagli, "GaAs/AlGaAs traveling wave electrooptic modulator with electrical bandwidth greater than 40 GHz", Electron. Lett., vol. 32, no. 12, pp. 1095-1096, Jun. <day>6</day>, 1996.

R. G. Walker, "Electrooptic modulation at mm-wave frequencies in GaAs/AlGaAs guided wave devices", in Proc. IEEE/LEOS 8th Annu. Meeting, San Francisco, CA, Oct. 30-Nov. 2, 1995, pp. 118-119.

S. R. Sakamoto, C. Ozturk, Y. T. Byun, J. Ko and N. Dagli, "Low loss substrate-removed (SURE) optical waveguides in GaAs/AlGaAs epitaxial layers embedded in organic polymers", IEEE Photon. Technol. Lett., vol. 10, no. 7, pp. 985-987, Jul. 1998.

Y. Cui, "GaAs-based traveling wave electro-optic modulators", M.S. thesis, School of Information Technology and Engineering, Univ. Ottawa, Ottawa, ON, Canada, 2004.

R. G. Walker, "High-speed III-V semiconductor intensity modulators", IEEE J. Quantum Electron., vol. 27, no. 3, pp. 654-667, Mar. 1991.

R. G. Walker, "High-speed electrooptic modulation in GaAs/GaAlAs waveguide devices", J. Lightw. Technol., vol. LT-5, no. 10, pp. 1444-1453, Oct. 1987.

R. E. Collin, Foundations for Microwave Engineering, New York: McGraw-Hill, 1992.

"Sonnet User's Manual", Sonnet Software, Inc., Liverpool, NY,.

T. G. Nguyen, A. Mitchell and Y. S. Visagathilagar, "Investigation of resonantly enhanced modulators on LiNbO3 using FEM and numerical optimization technique", J. Lightw. Technol., vol. 22, no. 2, pp. 526-533, Feb. 2004.

S. Y. Wang and S. H. Lin, "High speed III-V electrooptic waveguide modulators at \Lambda = 1.3\ µm", J. Lightw. Technol., vol. 6, no. 6, pp. 758-771, Jun. 1988.

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