Abstract

This paper demonstrates optical gain at 1.5 µm in Si-nanocrystal-sensitized, Er-doped silica waveguide using a commercial, low-cost 470 nm LED in top-pumping configuration. Experimental evidence of full inversion with maximum possible gain of 3 dB/cm is presented. Possible application of Si-nanocrystal-sensitized, Er-doped silica for silicon-based microphotonics is also presented.

© 2005 IEEE

PDF Article

References

  • View by:
  • |

  1. "Condensed Matter and Materials Physics National Research Council", National Academic, Washington, DC, 1999.
  2. A. J. Kenyon, P. F. Trwoga, M. Federighi and C. W. Pitt, "Optical properties of PECVD erbium-doped silicon-rich silica: Evidence for energy transfer between silicon microclusters and erbium ions", J. Phys.: Condens. Matter, vol. 6, pp. L319-L319, 1994.
  3. M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi and K. Yamamoto, "1.54 �m photoluminescence of Er3+ doped into SiO2 films containing nanocrystals: Evidence for energy transfer from Si nanocrystal to Er3+", Appl. Phys. Lett., vol. 71, pp. 4525-4525, 1198.
  4. J. H. Shin, M.-J. Kim, S.-Y. Seo and C. Lee, "Composition dependence of room temperature 1.54 mm Er31 luminescence from erbium-doped silicon: Oxygen thin films deposited by electroncyclotron resonance plasma enhanced chemical vapor deposition", Appl. Phys. Lett., vol. 72, pp. 1092-1092, 1998.
  5. S. Schmitt-Rink, C. M. Varma and A. F. J. Levi, "Excitation mechanisms and optical properties of reare-earth ions in semiconductors", Phys. Rev. Lett., vol. 66, pp. 2782-2782, 1991.
  6. P. G. Kik, M. L. Brongersma and A. Polman, "Strong exciton-erbium coupling in Si nanocrystal-doped SiO2", Appl. Phys. Lett., vol. 76, pp. 2325-2325, 2000.
  7. S.-Y. Seo and J. H. Shin, "Carrier-induced Er3 luminescence quenching of erbium-doped silicon-rich silicon oxide", Appl. Phys. Lett., vol. 75, pp. 4070-4070, 1999.
  8. G. Franzo, V. Vinciguerra and F. Priolo, "The excitation mechanism of rare-earth ions in silicon nanocrystals", Appl. Phys., vol. A 69, pp. 3-3, 1999.
  9. H.-S. Han, S.-Y. Seo and J. H. Shin, "Coefficient determination related to optical gain in erbium-doped silicon-rich silicon oxide waveguide amplifier", Appl. Phys. Lett., vol. 79, pp. 4568-4568, 2001.
  10. A. J. Kenyon, C. E. Chryssou, C. W. Pitt, T. Shimizu-lwayama, D. E. Hole, N. Sharme and C. J. Humphreys, "Luminescence from erbium doped silicon nanocrystal in silica: Excitation mechanisms", J. Appl. Phys., vol. 91, pp. 367-367, 2002.
  11. P. G. Kik and A. Polman, "Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO2", J. Appl. Phys., vol. 91, pp. 534-534, 2002.
  12. D. Negro, "Private Communication", Dept. of Materials Science and Eng., Massachusetts Institute of Technology, Cambridge, MA,
  13. J. Palm, F. Gan, B. Zheng, J. Michel and L. C. Kimerling, "Electroluminescence of erbium-doped silicon", Phys. Rev. B., vol. 54, pp. 17 603-17 603, 1996.
  14. P. G. Kik, "Toward an Er-doped Si nanocrystal sensitized waveguide laser-The thin line between gain and loss", Toward the First Silicon Laser, vol. 93,
  15. H.-S. Han, S.-Y. Seo, J. H. Shin and N. Park, "Coefficient determination related to optical gain in erbium-doped silicon-rich silicon oxide waveguide amplifier", Appl. Phys. Lett., vol. 81, pp. 3720-3720, 2002.
  16. H.-S. Han, S.-Y. Seo, J. H. Shin and D. S. Kim, "1.54 �m Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide", J. Appl. Phys., vol. 88, pp. 2169-2169, 2000.
  17. K. K. Lee, D. R. Lim, H.-C. Luan, A. Agarwal, J. Foresi and L. C. Kimerling, "Effect of size and roughness on light transmission in a Si/ SiO2 waveguide: Experiments and model", Appl. Phys. Lett., vol. 77, pp. 1617-1617, 2000.
  18. C. Garcia, B. Garrido, P. Pellegrino, J. R. Morante, M. Melchiorri, N. Daldosso, L. Pavesi, E. Scheid and G. Sarrabayrouse, "Low loss silica waveguides containing Si nanocrystals", in Mat. Res. Soc. Symp., vol. 817.

Other (18)

"Condensed Matter and Materials Physics National Research Council", National Academic, Washington, DC, 1999.

A. J. Kenyon, P. F. Trwoga, M. Federighi and C. W. Pitt, "Optical properties of PECVD erbium-doped silicon-rich silica: Evidence for energy transfer between silicon microclusters and erbium ions", J. Phys.: Condens. Matter, vol. 6, pp. L319-L319, 1994.

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi and K. Yamamoto, "1.54 �m photoluminescence of Er3+ doped into SiO2 films containing nanocrystals: Evidence for energy transfer from Si nanocrystal to Er3+", Appl. Phys. Lett., vol. 71, pp. 4525-4525, 1198.

J. H. Shin, M.-J. Kim, S.-Y. Seo and C. Lee, "Composition dependence of room temperature 1.54 mm Er31 luminescence from erbium-doped silicon: Oxygen thin films deposited by electroncyclotron resonance plasma enhanced chemical vapor deposition", Appl. Phys. Lett., vol. 72, pp. 1092-1092, 1998.

S. Schmitt-Rink, C. M. Varma and A. F. J. Levi, "Excitation mechanisms and optical properties of reare-earth ions in semiconductors", Phys. Rev. Lett., vol. 66, pp. 2782-2782, 1991.

P. G. Kik, M. L. Brongersma and A. Polman, "Strong exciton-erbium coupling in Si nanocrystal-doped SiO2", Appl. Phys. Lett., vol. 76, pp. 2325-2325, 2000.

S.-Y. Seo and J. H. Shin, "Carrier-induced Er3 luminescence quenching of erbium-doped silicon-rich silicon oxide", Appl. Phys. Lett., vol. 75, pp. 4070-4070, 1999.

G. Franzo, V. Vinciguerra and F. Priolo, "The excitation mechanism of rare-earth ions in silicon nanocrystals", Appl. Phys., vol. A 69, pp. 3-3, 1999.

H.-S. Han, S.-Y. Seo and J. H. Shin, "Coefficient determination related to optical gain in erbium-doped silicon-rich silicon oxide waveguide amplifier", Appl. Phys. Lett., vol. 79, pp. 4568-4568, 2001.

A. J. Kenyon, C. E. Chryssou, C. W. Pitt, T. Shimizu-lwayama, D. E. Hole, N. Sharme and C. J. Humphreys, "Luminescence from erbium doped silicon nanocrystal in silica: Excitation mechanisms", J. Appl. Phys., vol. 91, pp. 367-367, 2002.

P. G. Kik and A. Polman, "Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO2", J. Appl. Phys., vol. 91, pp. 534-534, 2002.

D. Negro, "Private Communication", Dept. of Materials Science and Eng., Massachusetts Institute of Technology, Cambridge, MA,

J. Palm, F. Gan, B. Zheng, J. Michel and L. C. Kimerling, "Electroluminescence of erbium-doped silicon", Phys. Rev. B., vol. 54, pp. 17 603-17 603, 1996.

P. G. Kik, "Toward an Er-doped Si nanocrystal sensitized waveguide laser-The thin line between gain and loss", Toward the First Silicon Laser, vol. 93,

H.-S. Han, S.-Y. Seo, J. H. Shin and N. Park, "Coefficient determination related to optical gain in erbium-doped silicon-rich silicon oxide waveguide amplifier", Appl. Phys. Lett., vol. 81, pp. 3720-3720, 2002.

H.-S. Han, S.-Y. Seo, J. H. Shin and D. S. Kim, "1.54 �m Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide", J. Appl. Phys., vol. 88, pp. 2169-2169, 2000.

K. K. Lee, D. R. Lim, H.-C. Luan, A. Agarwal, J. Foresi and L. C. Kimerling, "Effect of size and roughness on light transmission in a Si/ SiO2 waveguide: Experiments and model", Appl. Phys. Lett., vol. 77, pp. 1617-1617, 2000.

C. Garcia, B. Garrido, P. Pellegrino, J. R. Morante, M. Melchiorri, N. Daldosso, L. Pavesi, E. Scheid and G. Sarrabayrouse, "Low loss silica waveguides containing Si nanocrystals", in Mat. Res. Soc. Symp., vol. 817.

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.