Abstract

This paper proposes the use of shorter wavelengths and monolithic integration for chip-to-chip and on-chip optical communication. The promise of monolithic detectors for high-speed interconnection is demonstrated through experimental measurements and matching simulations. Responsivities > 0.06 A/W and transit-time-limited response can be expected in the blue from planar p-i-n silicon-on-insulator (SOI) detectors.

© 2004 IEEE

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  13. S. Adachi, Optical Constants of Crystalline and Amorphous Semiconductors, Norwell, MA: Kluwer, Aug. 1999.
  14. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus, "Electric field dependence of optical absorption near the bandgap of quantum well structures", Phys. Rev. B, Condens. Matter, vol. 32, pp. 1043-1060, 1985.
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Other (15)

T. K. Woodward and A. V. Krishnamoorthy, "1 Gbit/s CMOS photoreceiver with integrated detector operating at 850 nm", Electron. Lett., vol. 34, no. 12, pp. 1252-1253, June 1998.

M. K. Emsley, O. Dosunmu and M. S. Unlu, "High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates", IEEE Photon. Technol. Lett., vol. 14, pp. 519-521, Apr. 2002 .

M. Y. Liu, E. Chen and S. Y. Chou, "140 GHz metal-semiconductor-metal photodetectors on silicon-on-insulator substrate with a scaled active layer", Appl. Phys. Lett., vol. 65, no. 7, pp. 887-888, 1994.

B. F. Levine, J. D. Whynn, F. P. Klemens and G. Sarusi, "1 Gb/s Si high quantum efficiency monolithically integrable lambda = 0.88 µm detector", Appl. Phys. Lett., vol. 66, no. 22, pp. 2984-2986, 1995 .

S. M. Csutak, S. Dakshina-Murthy and J. C. Campbell, "CMOS-compatible planar silicon waveguide-grating-coupler photodetectors fabricated on Silicon-on-Insulator (SOI) substrates", IEEE J. Quantum Electron., vol. 38, pp. 477-480, May 2002.

B. Yang, J. D. Schaub, S. M. Csutak, D. L. Rogers and J. C. Campbell, "10-Gb/s all-silicon optical receiver", IEEE Photon. Tech. Lett., vol. 15, pp. 745-747, May 2003.

M. Yang, et al. "A high-speed, high-sensitivity silicon lateral trench photodetector", IEEE Electron Device Lett., vol. 23, pp. 395-397, July 2002.

Q. Ouyang and J. D. Schaub, "High speed lateral trench detectors with a junction substrate", in Proc. Device Research Conf., June 23-25 2003, pp. 73-74.

Frequency Doubled NCSEL Lasers. [Online]. Available: http://www.novalux.com/products/

A. Rochas, A. R. Pauchard, P. A. Besse, D. Pantic, Z. Prijic and R. S. Popovic, "Low-noise silicon avalanche photodiodes fabricated in conventional CMOS technologies", IEEE Trans. Electron Devices, vol. 49, pp. 387-395, Mar. 2002.

P. Catrysse, B. Wandell and A. El Gamal, "An integrated color pixel in 0.18 µm CMOS technology", in Int. Electron Devices Meeting (IEDM) Tech. Dig., Dec. 2-4 2001, pp. 24.4.1-24.4.4.

X. Zheng, C. Wrigley, G. Yang and B. Pain, "High responsivity CMOS imager pixel implemented in SOI technology", in IEEE Int. SOI Conf., Oct. 2-5 2000, pp. 138-139.

S. Adachi, Optical Constants of Crystalline and Amorphous Semiconductors, Norwell, MA: Kluwer, Aug. 1999.

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus, "Electric field dependence of optical absorption near the bandgap of quantum well structures", Phys. Rev. B, Condens. Matter, vol. 32, pp. 1043-1060, 1985.

S. M. Sze, Physics of Semiconductor Devices, New York: Wiley, 1969, ch. 2, p. 59.

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