Abstract

The noise behavior of an optically controlled metal-semiconductor field-effect transistor (OPFET) is investigated theoretically. A rigorous model has been developed for computation of different noise components in OPFET. The intrinsic parameters of the metal-semiconductor-field-effect transistor (MESFET) equivalent circuit are strongly influenced by the incident optical signal, and the photogenerated carriers are found to play a significant role in deciding the overall noise performance of an OPFET. The study also reveals that the operating frequency can be adjusted suitably to make the noise behavior of the OPFET independent of the value of the incident optical power. The device exhibits a high value of noise equivalent power (NEP) that may make it less attractive for application as a photodetector.

© 2004 IEEE

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  1. C. Baack, G. Elze and W. Walf, "GaAs MESFET: A high-speed optical detector", Electron. Lett., vol. 13, p. 193, 1977.
  2. P. Chakrabarti and V. Rajamani, "A proposed OEIC receiver using MESFET photodetector", J. Lightwave Technol., vol. 17, pp. 659-668, Apr. 1999.
  3. A. A. De Salles, "Optical control of GaAs MESFET", IEEE Trans. Microwave Theory Tech., vol. MTT -31, pp. 812 -820, Oct. 1983.
  4. R. N. Simons, "Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET", IEEE Trans. Microwave Theory Tech., vol. MTT-35, pp. 1444-1455, Dec. 1987.
  5. A. Madjar, P. R. Herczfeld and A. Paolella, "An analytical d.c. model for GaAs MESFET as an opticallycontrolled device", in Proc. 3rd Asia-Pacific Microwave Conf. , Tokyo, Japan, 1990, pp. 571-574.
  6. A. A. de Salles and J. R. Forrest, "Initial observation of optical injection locking of GaAs metal semiconductor field effect transistor oscillator", Appl. Phy. Lett., vol. 38, pp. 392-394, 1981.
  7. S. Kawasaki, H. Shiomi and K. Matsugatani, "A novel FET model including an illumination-intensity parameter for simulation of optically controlled millimeter-wave oscillators", IEEE Trans. Microwave Theory Tech., vol. MTT -46, pp. 820-828, June 1998.
  8. Y. Takanashi, K. Takahata and Y. Muramoto, "Characteristics of InALAs/InGaAs high electron mobolity transistors under 1.3-µm laser illumination", IEEE Electron Device Lett., vol. ED-19, pp. 472-474, Dec. 1998.
  9. Y. Takanashi, K. Takahata and Y. Muramoto, "Characteristics of InALAs/InGaAs high electron mobolity transistors under illumination with modulated light", IEEE Trans. Electron Devices, vol. ED-46, pp. 472 -474, Dec. 1999.
  10. D. Yang, P. Bhattacharya, R. Lai, T. Brock and A. Paolella, "Optical control and injection locking of monolithically integrated In0.53 Ga0.47As/In0.52 Al0.48 As MODFET oscillators", IEEE Trans. Electron Devices, vol. ED-42, pp. 31-37, Jan. 1995.
  11. P. Chakrabarti, N. L. Shreshta, S. Srivastva and V. Khemka, "An improved model of ion implanted OPFET", IEEE Trans. Electron Devices, vol. ED-39, pp. 2050 -2059, Sept. 1992.
  12. P. Chakrabarti, M. Madheswaaran, A. Gupta and N. A. Khan, "Numerical simulation of ion-implanted GaAs OPFET", IEEE Trans. Microwave Theory Tech., vol. MTT-46, pp. 1360-1366, Oct. 1998.
  13. N. S. Roy, B. B. Pal and R. U. Khan, "Analysis of GaAs OPFET with improved optical absorption under back illumination", IEEE Trans. Electron Devices, vol. ED-46, pp. 2350-2353, Dec. 1999.
  14. M. K. Verma and B. B. Pal, "Analysis of buried gate MESFET under dark and illumination", IEEE Trans. Electron Devices, vol. ED-48, pp. 2138-2142, Sept. 2001.
  15. N. S. Roy, B. B. Pal and R. U. Khan, "Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination", J. Lightwave Technol. , vol. 18, pp. 221-229, Feb. 2000.
  16. N. S. Roy and B. B. Pal, "Frequency-dependent OPFET characteristics with improved absorption under back illumination", J. Lightwave Technol., vol. 18, pp. 604-613, Apr. 2000.
  17. Y. Zebda and S. A. Helweh, "DC characteristics of optically controlled MESFET (OPFET)", J. Opt. Commun., vol. 19, pp. 2-8, Feb. 1998.
  18. M.W. Pospieszalski, "Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence", IEEE Trans. Microwave Theory Tech., vol. MTT-37, pp. 1340-1350, Sept. 1989.
  19. A. van der Ziel, "Thermal noise in field effect transistors", Proc. Institute Radio Engineers (IRE), vol. 50, pp. 1808-1812, Aug. 1962.
  20. W. Baechtold, "Noise behavior of GaAs FET with short gate lengths", IEEE Trans. Electron Devices, vol. ED-19, pp. 674 -680, May 1972.
  21. W. Baechtold, "Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies", IEEE Tran. Electron Devices, vol. ED-18, pp. 97-104, Feb. 1971.
  22. F. Danneville, G. Dambrine, H. Happy, P. Tradyszak and A. Cappy, "Influence of gate leakage current on the noise performance of MESFETs and MODFETs", Solid State Electron. , vol. 38, pp. 1081-1087, 1995.

J. Lightwave Technol. (2)

Other (20)

A. A. De Salles, "Optical control of GaAs MESFET", IEEE Trans. Microwave Theory Tech., vol. MTT -31, pp. 812 -820, Oct. 1983.

R. N. Simons, "Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET", IEEE Trans. Microwave Theory Tech., vol. MTT-35, pp. 1444-1455, Dec. 1987.

A. Madjar, P. R. Herczfeld and A. Paolella, "An analytical d.c. model for GaAs MESFET as an opticallycontrolled device", in Proc. 3rd Asia-Pacific Microwave Conf. , Tokyo, Japan, 1990, pp. 571-574.

A. A. de Salles and J. R. Forrest, "Initial observation of optical injection locking of GaAs metal semiconductor field effect transistor oscillator", Appl. Phy. Lett., vol. 38, pp. 392-394, 1981.

S. Kawasaki, H. Shiomi and K. Matsugatani, "A novel FET model including an illumination-intensity parameter for simulation of optically controlled millimeter-wave oscillators", IEEE Trans. Microwave Theory Tech., vol. MTT -46, pp. 820-828, June 1998.

Y. Takanashi, K. Takahata and Y. Muramoto, "Characteristics of InALAs/InGaAs high electron mobolity transistors under 1.3-µm laser illumination", IEEE Electron Device Lett., vol. ED-19, pp. 472-474, Dec. 1998.

Y. Takanashi, K. Takahata and Y. Muramoto, "Characteristics of InALAs/InGaAs high electron mobolity transistors under illumination with modulated light", IEEE Trans. Electron Devices, vol. ED-46, pp. 472 -474, Dec. 1999.

D. Yang, P. Bhattacharya, R. Lai, T. Brock and A. Paolella, "Optical control and injection locking of monolithically integrated In0.53 Ga0.47As/In0.52 Al0.48 As MODFET oscillators", IEEE Trans. Electron Devices, vol. ED-42, pp. 31-37, Jan. 1995.

P. Chakrabarti, N. L. Shreshta, S. Srivastva and V. Khemka, "An improved model of ion implanted OPFET", IEEE Trans. Electron Devices, vol. ED-39, pp. 2050 -2059, Sept. 1992.

P. Chakrabarti, M. Madheswaaran, A. Gupta and N. A. Khan, "Numerical simulation of ion-implanted GaAs OPFET", IEEE Trans. Microwave Theory Tech., vol. MTT-46, pp. 1360-1366, Oct. 1998.

N. S. Roy, B. B. Pal and R. U. Khan, "Analysis of GaAs OPFET with improved optical absorption under back illumination", IEEE Trans. Electron Devices, vol. ED-46, pp. 2350-2353, Dec. 1999.

M. K. Verma and B. B. Pal, "Analysis of buried gate MESFET under dark and illumination", IEEE Trans. Electron Devices, vol. ED-48, pp. 2138-2142, Sept. 2001.

N. S. Roy, B. B. Pal and R. U. Khan, "Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination", J. Lightwave Technol. , vol. 18, pp. 221-229, Feb. 2000.

Y. Zebda and S. A. Helweh, "DC characteristics of optically controlled MESFET (OPFET)", J. Opt. Commun., vol. 19, pp. 2-8, Feb. 1998.

M.W. Pospieszalski, "Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence", IEEE Trans. Microwave Theory Tech., vol. MTT-37, pp. 1340-1350, Sept. 1989.

A. van der Ziel, "Thermal noise in field effect transistors", Proc. Institute Radio Engineers (IRE), vol. 50, pp. 1808-1812, Aug. 1962.

W. Baechtold, "Noise behavior of GaAs FET with short gate lengths", IEEE Trans. Electron Devices, vol. ED-19, pp. 674 -680, May 1972.

W. Baechtold, "Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies", IEEE Tran. Electron Devices, vol. ED-18, pp. 97-104, Feb. 1971.

F. Danneville, G. Dambrine, H. Happy, P. Tradyszak and A. Cappy, "Influence of gate leakage current on the noise performance of MESFETs and MODFETs", Solid State Electron. , vol. 38, pp. 1081-1087, 1995.

C. Baack, G. Elze and W. Walf, "GaAs MESFET: A high-speed optical detector", Electron. Lett., vol. 13, p. 193, 1977.

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