Abstract

We present segmented transmission-line (TML) electroabsorption modulators (EAMs) with characteristic impedance close to 50 Omega. The segmented TML approach allows us to design a traveling-wave EAM with 50 Omega impedance and very high bandwidth. The devices show low return loss ( < -15 dB) and excellent frequency response up to 50 GHz,and exhibit a maximum model-extrapolated 3 dBe bandwidth (BW) of 90 GHz. An effective modeling tool based on Bloch-wave analysis is derived. Design considerations and TML properties for periodic TML-EAMs are discussed.

© 2004 IEEE

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  1. Y.-J. Chiu, H.-F. Chou, V. Kaman, P. Abraham and J. E. Bowers, "High extinction ratio and saturation power traveling-wave electroabsorption modulator", IEEE Photon. Technol. Lett., vol. 14, pp. 792-794, June 2002.
  2. S. Zhang, "Traveling-wave electroabsorption modulators", Ph. D. Dissertation, Dept. Elect. Comput. Eng., Univ. Calif., Santa Barbara, CA, 1999.
  3. M. Shirai, H. Arimoto, K. Watanbe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada and M. Okayasu, "40 Gbit/s electroabsorption modulators with impedance-controlled electrodes", Electron. Lett., vol. 39, no. 9, pp. 734-735, May 2003.
  4. Y. Akage, K. Kawano, S. Oku, R. Iga, H. Okamoto, Y. Miyamoto and H. Takeuchi, "Wide bandwidth of over 50 GHz traveling wave electrode electroabsorption modulator integrated DFB lasers", Electron. Lett., vol. 37, no. 5, pp. 299-300, 2001.
  5. S. Irmscher, R. Lewén and U. Eriksson, " inP/InGaAsP high-speed traveling-wave electro-absorption modulators with integrated termination resistors", Photon. Technol. Lett., vol. 14, pp. 923-925, 2002.
  6. G. L. Li, S. A. Pappert, P. Mages, C. K. Sun, W. S. C. Chang and P. K. L. Yu, "High-saturation high-speed traveling-wave InGaAsP-InP electroabsorption modulator", IEEE Photon. Technol. Lett., vol. 13, pp. 1076-1078, 2001.
  7. S. Kodoma, T. Yoshihide and H. Ito, "320-Gbit/s demultiplexing with monolitic PD-EAM optical gate", in Eur. Conf. Optical Communication (ECOC'02), 2002, Paper 8.4.1.
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  10. G. L. Li, S. K. Sun, S. A. Pappert, W. X. Chen and P. K. L. Yu, "Ultrahigh-speed traveling-wave electroabsorption modulator-Design and analysis", IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1177-1183, July 1999.
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  12. R. G. Walker, "High-speed semiconductor intensity modulators", IEEE J. Quantum Electron., vol. 27, pp. 654-667, 1991.
  13. L. Mörl, D. Hoffmann, K. Matzen, C. Bornholdt, G. G. Mekonnen and F. Reier, "Traveling wave electrodes for 50 GHz operation of opto-electronic devices based on InP", in Proc. Indium Phosphide Related Materials Conf., Davos, Switzerland, 1999,Paper WeA1-3,. pp. 385-388.
  14. S. R. Sakamoto, A. Jackson and N. Dagli, "Substrate removed GaAs/AlGaAs mach-zehnder electro-optic modulators for ultra wide bandwidth operation", in Int. Topical Meeting Microwave Photonics 1999, Nov. 1999, pp. 13-16.
  15. S. Akiyama, S. Hirose, T. Watanabe, M. Ueda, S. Sekiguchi, N. Morii, T. Yamamoto, A. Kuramata and H. Soda, "Novel InP-based Mach-Zehnder modulator for 40 Gb/s integrated lightwave source", in IEEE 18th Int. Semiconductor Laser Conf. 2002, 2002, TuC1,. pp. 57-58.
  16. V. B. Krishnamurthy, H. S. Cole and T. Sitnik-Nieters, "Use of BCB in high frequency MCM interconnects", IEEE Trans. Comp. Packag., Manufact. Technol. B, vol. 19, pp. 42-47, Feb. 1996.
  17. R. E. Collin, Foundations for Microwave Engineering, 2nd ed. : Singapore: McGraw-Hill, 1992, ch. 8.
  18. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, New York: Wiley, 1995, ch. 3.2-3.3.
  19. D. M. Pozar, Microwave Engineering, Reading, MA: Addison-Wesley, 1990.

Other (19)

Y.-J. Chiu, H.-F. Chou, V. Kaman, P. Abraham and J. E. Bowers, "High extinction ratio and saturation power traveling-wave electroabsorption modulator", IEEE Photon. Technol. Lett., vol. 14, pp. 792-794, June 2002.

S. Zhang, "Traveling-wave electroabsorption modulators", Ph. D. Dissertation, Dept. Elect. Comput. Eng., Univ. Calif., Santa Barbara, CA, 1999.

M. Shirai, H. Arimoto, K. Watanbe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada and M. Okayasu, "40 Gbit/s electroabsorption modulators with impedance-controlled electrodes", Electron. Lett., vol. 39, no. 9, pp. 734-735, May 2003.

Y. Akage, K. Kawano, S. Oku, R. Iga, H. Okamoto, Y. Miyamoto and H. Takeuchi, "Wide bandwidth of over 50 GHz traveling wave electrode electroabsorption modulator integrated DFB lasers", Electron. Lett., vol. 37, no. 5, pp. 299-300, 2001.

S. Irmscher, R. Lewén and U. Eriksson, " inP/InGaAsP high-speed traveling-wave electro-absorption modulators with integrated termination resistors", Photon. Technol. Lett., vol. 14, pp. 923-925, 2002.

G. L. Li, S. A. Pappert, P. Mages, C. K. Sun, W. S. C. Chang and P. K. L. Yu, "High-saturation high-speed traveling-wave InGaAsP-InP electroabsorption modulator", IEEE Photon. Technol. Lett., vol. 13, pp. 1076-1078, 2001.

S. Kodoma, T. Yoshihide and H. Ito, "320-Gbit/s demultiplexing with monolitic PD-EAM optical gate", in Eur. Conf. Optical Communication (ECOC'02), 2002, Paper 8.4.1.

S. Irmscher, "Design, fabrication and analysis of InP-InGaAsP traveling-wave electro-absorbtion modulators", Ph.D. dissertation, Dept. Microelectron. Inform. Technol., Royal Inst. Technol., Sweden, 2003.

R. Lewén, "High-speed electroabsorption modulators and p-i-n photodiodes for fiber-optic communications", Ph.D. Dissertation, Dept. Microelectronics and Information Technol., Royal Inst. Technol., Sweden, 2003.

G. L. Li, S. K. Sun, S. A. Pappert, W. X. Chen and P. K. L. Yu, "Ultrahigh-speed traveling-wave electroabsorption modulator-Design and analysis", IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1177-1183, July 1999.

R. Lewén, S. Irmscher and U. Eriksson, "Microwave CAD circuit modeling of a traveling-wave electro-absorption modulator", IEEE Trans. Microwave Theory Tech., vol. 51, pp. 1117 -1128, Apr. 2003.

R. G. Walker, "High-speed semiconductor intensity modulators", IEEE J. Quantum Electron., vol. 27, pp. 654-667, 1991.

L. Mörl, D. Hoffmann, K. Matzen, C. Bornholdt, G. G. Mekonnen and F. Reier, "Traveling wave electrodes for 50 GHz operation of opto-electronic devices based on InP", in Proc. Indium Phosphide Related Materials Conf., Davos, Switzerland, 1999,Paper WeA1-3,. pp. 385-388.

S. R. Sakamoto, A. Jackson and N. Dagli, "Substrate removed GaAs/AlGaAs mach-zehnder electro-optic modulators for ultra wide bandwidth operation", in Int. Topical Meeting Microwave Photonics 1999, Nov. 1999, pp. 13-16.

S. Akiyama, S. Hirose, T. Watanabe, M. Ueda, S. Sekiguchi, N. Morii, T. Yamamoto, A. Kuramata and H. Soda, "Novel InP-based Mach-Zehnder modulator for 40 Gb/s integrated lightwave source", in IEEE 18th Int. Semiconductor Laser Conf. 2002, 2002, TuC1,. pp. 57-58.

V. B. Krishnamurthy, H. S. Cole and T. Sitnik-Nieters, "Use of BCB in high frequency MCM interconnects", IEEE Trans. Comp. Packag., Manufact. Technol. B, vol. 19, pp. 42-47, Feb. 1996.

R. E. Collin, Foundations for Microwave Engineering, 2nd ed. : Singapore: McGraw-Hill, 1992, ch. 8.

L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, New York: Wiley, 1995, ch. 3.2-3.3.

D. M. Pozar, Microwave Engineering, Reading, MA: Addison-Wesley, 1990.

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