Abstract

We propose a newly designed X-cut lithium niobate (LiNbO3) optical modulator. It has a two-step back-slot structure to satisfy the velocity-matching condition without the buffer layer of silicon dioxide (SiO2). Accordingly,this modulator can achieve low drive voltage and low optical insertion loss. In addition, the dc-drift phenomena due to the buffer layer can be suppressed. This structure is fabricated with micromachining technology using excimer laser ablation. The optical 3-dB bandwidth of the fabricated modulator reaches 30 GHz, and the drive voltage is less than 3 V at 1 kHz. From the measurement of the optical eye diagram at 43.5-Gb/s, clear eye openings were obtained. This modulator is sufficient for 40-Gb/s optical transmission systems.

[IEEE ]

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  1. W. K. Burns, M. M. Howerton, R. P. Moeller, R. Krähenbühl, R. W. McElhanon and A. S. Greenblatt, "Low drive voltage, broad-band LiNbO 3 modulators with and without etched ridges", J. Lightwave Technol., vol. 17, pp. 2551-2555, Dec. 1999.

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