Abstract

This paper reports the planar-structure InAlGaAs-InAlAs superlattice avalanche photodiodes (SL-APDs) with a Ti-implanted guard-ring,which were developed for a compact and high-sensitivity 10-Gb/s optical receiver application. The design and fabrication of the novel concept planar-structure including the Ti-implanted guard-ring are described. The characteristics of the planar APDs are 0.36 µA dark current at a multiplication factor of 10, 67% quantum efficiency, 110-GHz gain-bandwidth (GB) product, 15-GHz top-bandwidth, and -27.2-dBm sensitivity at 10 Gb/s. The reliability was preliminary tested and the lifetime of longer than 107 h at 50°C was estimated. The dark current characteristics including its temperature dependence and the excess noise characteristics are also analyzed. All the obtained characteristics exhibit the practical availability of the planar SL-APDs in the 10-Gb/s trunk line optical receiver uses.

© 2000 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription