Abstract

This paper outlines the design considerations for gigahertz-bandwidth, high-current p-i-n photodiodes utilizing InGaAs absorbers. The factors being investigated are photodetector intrinsic region length, intrinsic region doping density, temperature effects, illumination spot size, illumination wavelength, frequency, and illumination direction. Space-charge calculations are used to determine optimal device geometry and conditions which maximize saturation photocurrent. A thermal model is developed to study the effects of temperature on high-current photodetector performance. The thermal and space-charge model results are combined to emphasize the importance of thin intrinsic region lengths to obtain high current. Finally, a comparison between surface-illuminated p-i-n structures and waveguide structures is made to differentiate between the problems associated with achieving high current in each structure and to outline techniques to achieve maximum performance.

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  1. K. J. Williams, L. T. Nichols, and R. D. Esman, "Photodetector nonlinearity limitations on a high-dynamic range 3 GHz fiber optic link," J. Lightwave Technol., vol. 16, pp. 192-199, Feb. 1998.
  2. D. Kuhl, F. Hieronymi, E. H. Bottcher, T. Wolf, D. Bimberg, J. Kuhl, and M. Klingenstein, "Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors," J. Lightwave Technol., vol. 10, pp. 753-759, June 1992.
  3. K. J. Williams, R. D. Esman, and M. Dagenais, "Nonlinearities in p-i-n microwave photodetectors," J. Lightwave Technol., vol. 14, pp. 84-96, 1996.

J. Lightwave Technol. (3)

K. J. Williams, L. T. Nichols, and R. D. Esman, "Photodetector nonlinearity limitations on a high-dynamic range 3 GHz fiber optic link," J. Lightwave Technol., vol. 16, pp. 192-199, Feb. 1998.

D. Kuhl, F. Hieronymi, E. H. Bottcher, T. Wolf, D. Bimberg, J. Kuhl, and M. Klingenstein, "Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors," J. Lightwave Technol., vol. 10, pp. 753-759, June 1992.

K. J. Williams, R. D. Esman, and M. Dagenais, "Nonlinearities in p-i-n microwave photodetectors," J. Lightwave Technol., vol. 14, pp. 84-96, 1996.

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