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Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 17,
  • Issue 6,
  • pp. 1079-
  • (1999)

Characterization and Application of Triode-Type EA Modulator

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Abstract

In this paper, we have characterized triode-type electroabsorption modulators (Tr-EAM's) which have two junction diodes with the same electrical polarity connection. When a reverse voltage is applied to the junction acting as the optical absorption waveguide (collector-side junction), the curve of current and optical transmission versus the applied voltage characteristics follows almost the same trace as the curve for a conventional diode-type EAM, except for the dc-bias shift toward the reverse voltage direction. The voltage shift is theoretically estimated to be almost constant and just over the built-in voltage of the other junction (emitter-side junction). When the forward voltage is applied to the collector-side junction, the current does not flow and the optical power level does not change, because the applied voltage is clamped to be the built-in voltage of the collector-side junction. The structure of the Tr-EAM was practically configured using two laterally arrayed PIN junctions. The current and transmission characteristics as a function of the applied voltage were as expected. The voltage shift between the Tr-EAM and conventional diode-type EA modulators with a PIN junction (PIN-EAM) was almost 0.7 V. There was no degradation in 3 dB-down bandwidth and improved electrical reflection was observed in the reverse voltage range. The Tr-EAM retains the values even in the forward voltage range due to its high impedance in contrast to the PIN-EAM. This structure leads to the realization of an extended applied voltage range and electrical robustness. We confirmed that the Tr-EAM resulted in the extension of the voltage range from -12 V to +12 V as compared to -12 V to +0.6 V in the PIN-EAM. Aging tests carried out under a bias voltage of +12 V for over 2000 h show no degradation in the leakage current in the present study. The Tr-EAM has attractive features for application purposes, since it has a step-like optical transmission as a function of the applied voltage. In the nonreturn-to-zero (NRZ) modulation scheme, cross points of the eye pattern were adjusted with a dc bias voltage without timing jitter in the trailing edges. Bit-error-rate experiments under the back-to-back condition show a wide bias voltage tolerance of 0.86 V giving the required received power of less than -34 dBm compared to 0.25 V for the PIN-EAM. In the return-to-zero (RZ) modulation scheme, a transmission gate with a 0-100% time slot window corresponding to the demultiplexed bit-rate was realized under sinusoidal modulation with a constant voltage swing; 20 GHz RZ pulses were gated to 5 and 10 GHz with various gate windows by tuning the dc bias voltage.

[IEEE ]

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