First- and second-order Bragg reflectors at telecommunication wavelength (1.5 m) were fabricated in single-mode monolayer (As2S3) and multilayer (As-S-Se/As-S) chalcogenide glass (ChG) planar waveguides with near bandgap illumination using an interferometric technique. Reflectivities as high as 90% near 1555 nm, and index modulations up to 3 10 - 4 were achieved. The volume photodarkening effect is the principal mechanism involved in the formation of the Bragg gratings.


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