Abstract
GaInP/GaAs heterojunction bipolar phototransistors grown by metal organic vapor phase epitaxy (MOVPE) and operated with frontside optical injection through the emitter are reported with high optical gain ({<}88) and record high frequency performance (28 GHz). Heteropassivation of the extrinsic base surface is employed using a depleted GaInP emitter layer between the nonself-aligned base contact and the emitter mesa. The phototransistor's performance is shown to improve with increasing dc base bias in agreement with predictions of a recently reported Gummel-Poon model. Experimental results are reported for devices with optical active areas of 10 \times 10 \mum2, 20 \times 20 \mum2, and 30 \times 30 \mum2, with peak measured cutoff frequencies of 28.5, 23.1, and 18.5 GHz, respectively, obtained at collector current densities between 2 \times 103 and 6 \times 103 A/cm2.
[IEEE ]
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