Abstract

A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.

© 2014 OAPA

Design of single layer antireflection coatings for InP/In_0.53Ga_0.47As/InP photodetectors for the 1200–1600-nm wavelength range

David M. Braun
Appl. Opt. 27(10) 2006-2011 (1988)

Photomixing at 1.55 μm in ion-irradiated In0.53Ga_0.47As on InP

N. Chimot, J. Mangeney, P. Crozat, J. M. Lourtioz, K. Blary, J. F. Lampin, G. Mouret, D. Bigourd, and E. Fertein
Opt. Express 14(5) 1856-1861 (2006)

Effects of carrier injection profile on low noise thin Al_0.85Ga_0.15As_0.56Sb_0.44 avalanche photodiodes

Lucas L.G. Pinel, Simon J. Dimler, Xinxin Zhou, Salman Abdullah, Shiyong Zhang, Chee Hing Tan, and Jo Shien Ng
Opt. Express 26(3) 3568-3576 (2018)

High gain, low noise 1550  nm GaAsSb/AlGaAsSb avalanche photodiodes

S. Lee, X. Jin, H. Jung, H. Lewis, Y. Liu, B. Guo, S. H. Kodati, M. Schwartz, C. Grein, T. J. Ronningen, J. P. R. David, Joe. C. Campbell, and S. Krishna
Optica 10(2) 147-154 (2023)

Emission characteristics of ion-irradiated In_0.53Ga_0.47As based photoconductive antennas excited at 1.55 μm

J. Mangeney, N. Chimot, L. Meignien, N. Zerounian, P. Crozat, K. Blary, J.F. Lampin, and P. Mounaix
Opt. Express 15(14) 8943-8950 (2007)