Abstract

The authors report that GaN-based LEDs with contact-transferred and mask-embedded lithography (CMEL) and in-situ N<sub>2</sub> treatments were fabricated. From the experiment results, it can be seen clearly that the characteristic of ITO contacts on the etched p-GaN with the N<sub>2</sub> treatment-20 sccm shows a near ohmic behavior. With 20 mA current injection, it was found that forward voltage and output power were 3.09 V and 5.16 mW for the LED with CMEL-400 nm-treatment. It was also found that we can achieve 20.5% enhancement for the LED with CMEL-400 nm and do not degrade the electrical properties of the GaN-based LEDs. Furthermore, the reliability of the proposed LED was good.

© 2012 IEEE

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