Abstract

A polarization-independent photodetector device is demonstrated that can be combined with electronic integrated circuits on a single chip. The photodetector device is fully compatible with the standard silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) process without requiring process modification or postprocessing.

© 2009 IEEE

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References

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  1. H. Zimmermann, Integrated Silicon Optoelectronics (Springer-Verlag, 2000).
  2. S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, Y. A. Vlasov, "CMOS-integrated 40 GHz germanium waveguide photodetector for on-chip optical interconnects," Proc. Opt. Fiber Commun. Conf. (2009).
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2006

C. Schow, L. Schares, S. Koester, G. Dehlinger, R. John, F. Doany, "A 15-Gb/s 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC," IEEE Photon. Technol. Lett. 18, 1981-1983 (2006).

A. Farjadpour, D. Roundy, A. Rodriguez, M. Ibanescu, P. Bermel, J. D. Joannopoulos, S. G. Johnson, G. W. Burr, "Improving accuracy by subpixel smoothing in the finite-difference time domain," Opt. Lett. 31, 2972-2974 (2006).

2002

M. Yang, K. Rim, D. Rogers, J. Schaub, J. Welser, D. Kuchta, D. Boyd, F. Rodier, P. Rabidoux, J. Marsh, A. Ticknor, Q. Yang, A. Upham, S. Ramac, "A high-speed, high-sensitivity silicon lateral trench photodetector," IEEE Electron Device Lett. 23, 395-397 (2002).

S. Csutak, S. Dakshina-Murthy, J. Campbell, "CMOS-compatible planar silicon waveguide-grating-coupler photodetectors fabricated on silicon-on-insulator (SOI) substrates," IEEE J. Quantum Electron. 38, 477-480 (2002).

1997

D. Mathine, "The integration of III–V optoelectronics with silicon circuitry," IEEE J. Quantum Electron. 3, 952-959 (1997).

IEEE Electron Device Lett.

M. Yang, K. Rim, D. Rogers, J. Schaub, J. Welser, D. Kuchta, D. Boyd, F. Rodier, P. Rabidoux, J. Marsh, A. Ticknor, Q. Yang, A. Upham, S. Ramac, "A high-speed, high-sensitivity silicon lateral trench photodetector," IEEE Electron Device Lett. 23, 395-397 (2002).

IEEE J. Quantum Electron.

D. Mathine, "The integration of III–V optoelectronics with silicon circuitry," IEEE J. Quantum Electron. 3, 952-959 (1997).

S. Csutak, S. Dakshina-Murthy, J. Campbell, "CMOS-compatible planar silicon waveguide-grating-coupler photodetectors fabricated on silicon-on-insulator (SOI) substrates," IEEE J. Quantum Electron. 38, 477-480 (2002).

IEEE Photon. Technol. Lett.

C. Schow, L. Schares, S. Koester, G. Dehlinger, R. John, F. Doany, "A 15-Gb/s 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC," IEEE Photon. Technol. Lett. 18, 1981-1983 (2006).

Opt. Lett.

Other

H. Zimmermann, Integrated Silicon Optoelectronics (Springer-Verlag, 2000).

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, Y. A. Vlasov, "CMOS-integrated 40 GHz germanium waveguide photodetector for on-chip optical interconnects," Proc. Opt. Fiber Commun. Conf. (2009).

W. Zhang, M. Chan, "Properties and design optimization of photo-diodes available in a current CMOS technology," Proc. Electron Devices Meeting (1998) pp. 22-25.

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