Abstract
This paper studies integrated silicon photodiodes (PDs) implemented in
standard CMOS technologies. A new PIN PD structure utilizing deep n-well is
presented, and compared with conventional vertical and lateral PIN PDs at
850-nm wavelength and different bias conditions. Prototype PDs were
fabricated in a 0.18-$\mu$m standard CMOS technology, and their DC, impulse and frequency
responses were characterized. A 70$\,\times\,$70 $\mu$m$^2$ PD with the new structure achieved a 3-dB bandwidth of 2.2 GHz in
small signal at 5-V bias, whereas conventional lateral and vertical PIN PDs
could only operate up to 0.94 GHz and 1.15 GHz, respectively. At 5-V bias,
the impulse response of the new PD exhibited a full-width at half-maximum
pulsewidth of 127 ps, versus 175 and 150 ps for the conventional lateral and
vertical ones, respectively. At 15.5-V bias, the bandwidth of this new PD
reached 3.13 GHz, with an impulse response pulsewidth of 102 ps. The
responsivity of all prototype PDs was measured at approximately 0.14 A/W up
to 10-V bias, which corresponded to a quantum efficiency of 20%. The
responsivity of the new PD could be further increased to 0.4 A/W or 58%
quantum efficiency, when operating in the avalanche region at 16.2-V
bias.
© 2009 IEEE
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