Abstract
Two integrated circuits, a modulator driver and a photoreceiver
integrating a metal-semiconductor-metal (MSM) photodetector, a
differential transimpedance amplifier and two limiting amplifier stages
for high-speed optical-fiber links are presented. The IC's were
manufactured in a 0.2 \mum gate-length AlG aAs/GaAs-high-electron mobility
transistor (HEMT) technology with a f_T of 60 GHz. The modulator driver IC
operates up to 25 Gb/s with an output voltage swing of 3.3 Vp-p at each
output. The 1.3-1.55 \mum wavelength monolithically integrated
photoreceiver optoelectronic integrated circuit (OEIC) has a bandwidth of
17 GHz with a high transimpedance gain of 12 k\Omega. Eye diagrams are
demonstrated at 20 Gb/s with an output voltage of 1 Vp-p.
© 1998 IEEE
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