Abstract

We demonstrate evanescently-coupled GaAs0.5Sb0.5/In0.53AlyGa0.47-yAs modified uni-traveling carrier (MUTC) waveguide photodiodes (PDs) with high bandwidth (BW) of 66 GHz at zero bias and over 100 GHz bandwidth under low bias condition. An InxAlyGa1-x-yAs dual-integrated waveguide-drift layer which can facilitate efficient light coupling from the waveguide into the absorber over a short length is utilized. A 7-μm long waveguide PD has an internal responsivity of 0.48 A/W at 1550 nm and clearly open eye diagrams at 40 Gb/s are demonstrated at zero bias.

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