Abstract
We present the design, fabrication, and measurement of a high-speed carrier-depletion silicon optical
modulator based on Mach–Zehnder Interferometer structure. Based on an equivalent circuit model, the
traveling-wave electrode size and doping concentration of the PN junction are optimized to achieve a large modulation
bandwidth. The modulation efficiency and optical loss at different positions of the PN junction are also simulated.
The device is fabricated on silicon-on-insulator (SOI) with 0.13 μm CMOS technology. An insertion loss of
3.9 dB (resp. 6.2 dB) and a
$V_{\pi}L_{\pi}$
of
1.62–2.05 V·cm (resp. 1.47–1.97 V·cm) are experimentally realized for 1 mm
(resp. 2 mm) long phase shifter. By small signal measurement, the modulator exhibits a 3 dB bandwidth of
30 GHz and 19 GHz for 1 mm and 2 mm long phase shifter, respectively, which agrees well with the
simulation results. The optical eye diagram with data rate up to 44 Gb/s is also demonstrated, showing potential
in the application of high-speed optical interconnects.
© 2013 IEEE
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