OSA Publishing

1 April 2013, Volume 9, Issue 4, pp. 187-296   17 articles

Guest Editorial Recent Advances in Solid State Lighting

J. Display Technol. 9(4), 187-189 (2013)  View: PDF

Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

J. Display Technol. 9(4), 190-198 (2013)  View: PDF

Analysis of Interdiffused InGaN Quantum Wells for Visible Light-Emitting Diodes

J. Display Technol. 9(4), 199-206 (2013)  View: PDF

Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs With Different Quantum Barrier Thickness

J. Display Technol. 9(4), 207-211 (2013)  View: PDF

Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes

J. Display Technol. 9(4), 212-225 (2013)  View: PDF

On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes

J. Display Technol. 9(4), 226-233 (2013)  View: PDF

Effects of H2 in GaN Barrier Spacer Layer of InGaN/GaN Multiple Quantum-Well Light-Emitting Diodes

J. Display Technol. 9(4), 234-238 (2013)  View: PDF

Improved Carrier Distributions by Varying Barrier Thickness for InGaN/GaN LEDs

J. Display Technol. 9(4), 239-243 (2013)  View: PDF

Effect of Polarization-Matched n-Type AlGaInN Electron-Blocking Layer on the Optoelectronic Properties of Blue InGaN Light-Emitting Diodes

J. Display Technol. 9(4), 244-248 (2013)  View: PDF

Effect of Si Doping Level in n-Cladding Layer on the Performance of InGaN-Based Light-Emitting Diodes

J. Display Technol. 9(4), 249-254 (2013)  View: PDF

Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer

J. Display Technol. 9(4), 255-259 (2013)  View: PDF

Observation of Electroluminescence From Quantum Wells Far From p-GaN Layer in Nitride-Based Light-Emitting Diodes

J. Display Technol. 9(4), 260-265 (2013)  View: PDF

Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes

J. Display Technol. 9(4), 266-271 (2013)  View: PDF

First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters

J. Display Technol. 9(4), 272-279 (2013)  View: PDF

Efficiency and Droop Improvement in Hybrid Warm White LEDs Using InGaN and AlGaInP High-Voltage LEDs

J. Display Technol. 9(4), 280-284 (2013)  View: PDF

Enhanced Light Output Power and Growth Mechanism of GaN-Based Light-Emitting Diodes Grown on Cone-Shaped SiO2 Patterned Template

J. Display Technol. 9(4), 285-291 (2013)  View: PDF

Effects of Initial GaN Growth Mode on Patterned Sapphire on the Opto-Electrical Characteristics of GaN-Based Light-Emitting Diodes

J. Display Technol. 9(4), 292-296 (2013)  View: PDF

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