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OSA Publishing

1 November 2014, Volume 10, Issue 11, pp. 909-983   13 articles

Improving the Vertical Light-Extraction Efficiency of GaN-Based Thin-Film Flip-Chip LEDs With p-Side Deep-Hole Photonic Crystals

J. Display Technol. 10(11), 909-916 (2014)  View: PDF

Amorphous Oxide Semiconductor TFTs for Displays and Imaging

J. Display Technol. 10(11), 917-927 (2014)  View: PDF

Source-Gated Transistors for Power- and Area-Efficient AMOLED Pixel Circuits

J. Display Technol. 10(11), 928-933 (2014)  View: PDF

High-Performance Solution-Processed InGaZnO Thin-Film Transistor Fabricated by Ozone-Assisted Atmospheric Pressure Mist Deposition

J. Display Technol. 10(11), 934-938 (2014)  View: PDF

Effect of Strontium Addition on Stability of Zinc-Tin-Oxide Thin-Film Transistors Fabricated by Solution Process

J. Display Technol. 10(11), 939-944 (2014)  View: PDF

Single-Grain Si TFTs Fabricated From Sputtered Si on a Polyimide Substrate

J. Display Technol. 10(11), 945-949 (2014)  View: PDF

Improvement in Characteristic Variability of TFTs Using Grain Growth Control by Micro Thermal Plasma Jet Irradiation on a-Si Strips

J. Display Technol. 10(11), 950-955 (2014)  View: PDF

Contact Effects in Amorphous InGaZnO Thin Film Transistors

J. Display Technol. 10(11), 956-961 (2014)  View: PDF

Fluorinated Graphene FETs Controlled by Ionic Liquid Gate

J. Display Technol. 10(11), 962-965 (2014)  View: PDF

Fabrication of High-Performance Poly-Si Thin-Film Transistors With Sub-Lithographic Channel Dimensions

J. Display Technol. 10(11), 966-970 (2014)  View: PDF

Solution Processed Organic Thin-Film Transistors With Hybrid Low/High Voltage Operation

J. Display Technol. 10(11), 971-974 (2014)  View: PDF

Positive-Bias Stress Test on Amorphous In–Ga–Zn–O Thin Film Transistor: Annealing-Temperature Dependence

J. Display Technol. 10(11), 975-978 (2014)  View: PDF

Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs

J. Display Technol. 10(11), 979-983 (2014)  View: PDF

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