Abstract
The fabrication process and electrical characteristics of bottom-gate Indium Gallium Zinc
Oxide (IGZO) thin-film transistors (TFTs) are reported in details. The influence of post-annealing
ambient (Oxygen or Nitrogen) is studied. It has been found that characteristics of TFTs strongly
depend on annealing conditions. TFTs with Oxygen annealing exhibit standard TFT characteristics.
In this case, we have obtained a mobility of 7.2 cm
$^{2}/{{V}}\cdot{{s}}$ , a subthreshold swing of 0.3
V/decade, high ${I}_{\rm on}/{I}_{\rm off}$
of ${{10}}^{7}$ and low
leakage current of the order of ${{10}}^{-13}$
at ${V}_{\rm gs} = -20$
V. In the meantime, TFTs without a post-annealing or with Nitrogen annealing exhibited poor
characteristics; more particularly the channel could not be depleted in the reverse mode. To
understand the origins of this phenomenon, IGZO films from these devices have been analyzed by
X-Ray Photoelectron Spectroscopy (XPS). Experimental results show that IGZO layers after annealing
in N $_{2}$ have higher concentration of
oxygen vacancies. This is consistent with our electrical results since it is assumed that
conduction in IGZO films is the result of oxygen vacancies.
© 2013 IEEE
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