Abstract
Electrical characteristics of fully self-aligned gate overlapped lightly
doped drain (FSA-GOLDD) polysilicon TFTs, fabricated with a spacer technology
providing submicron (0.35
$\mu$
m) LDD regions, have been analyzed by using two-dimensional numerical
simulations. The numerical analysis was used to explain the observed reduced
kink effect and short channel effects presented by FSA GOLDD devices, compared
to SA devices. The reduction of the kink effect has been attributed to the
reduced impact ionization rate, and related to reduced electric fields at
the channel/LDD junction. In addition, the role of the LDD dose on the kink
effect has been also investigated, clarifying the observed current inflection
occurring in the kink effect regime and the LDD dose dependence of the breakdown.
Reduced short channel effects were attributed to reduced floating body effects,
since drain induced barrier lowering was apparently not affected by the SA
GOLDD structure, when compared to SA devices.
© 2013 IEEE
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