Abstract

In this work, we report on the fabrication of hybrid n-channel thin film transistors using paper as substrate and gate insulator, and indium oxide $({{In}}_{2}{{O}}_{3})$ thin films as channel layer, and contacts for the source, drain and gate respectively. Capacitor paper having 10 $\mu{{m}}$ thickness was used. ${{In}}_{2} {{O}}_{3}$ thin films were grown by pulsed electron beam deposition method at room temperature. The gate leakage current was 20 nA at 5 V and the on/off current ratio up to ${{6}}\times {{10}}^{4}$, limited mainly by the gate leakage. The transfer characteristics $-{I}_{d} ({V}_{\rm gs})$– showed a memory effect with a threshold voltage of 0.8 V in “0” state and $-{{3.6}}~{{V}}$ in “1” state. The drain current-voltage characteristics family $-{I}_{d} ({V}_{\rm ds})$– showed saturation currents up to 3.5 mA in “1”state and about ${{500}}~\mu{{A}}$ in “0” state. The subthreshold swing was 0.3-0.5 V/decade.

© 2013 IEEE

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