Abstract

In this work, we report on the fabrication of hybrid n-channel thin film transistors using paper as substrate and gate insulator, and indium oxide $({{In}}_{2}{{O}}_{3})$ thin films as channel layer, and contacts for the source, drain and gate respectively. Capacitor paper having 10 $\mu{{m}}$ thickness was used. ${{In}}_{2} {{O}}_{3}$ thin films were grown by pulsed electron beam deposition method at room temperature. The gate leakage current was 20 nA at 5 V and the on/off current ratio up to ${{6}}\times {{10}}^{4}$, limited mainly by the gate leakage. The transfer characteristics $-{I}_{d} ({V}_{\rm gs})$– showed a memory effect with a threshold voltage of 0.8 V in “0” state and $-{{3.6}}~{{V}}$ in “1” state. The drain current-voltage characteristics family $-{I}_{d} ({V}_{\rm ds})$– showed saturation currents up to 3.5 mA in “1”state and about ${{500}}~\mu{{A}}$ in “0” state. The subthreshold swing was 0.3-0.5 V/decade.

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  1. R. Martins, I. Ferreira, E. Fortunato, "Electronics with and on paper," Phys. Status Solidi RRL, nr 5 9, 332-335 (2011).
  2. R. Martins, A. Nathan, R. Barros, L. Pereira, P. Barquinha, N. Correia, R. Costa, A. Ahnood, I. Ferreira, E. Fortunato, "Complementary metal oxide semiconductor technology with and on paper," Adv. Mater. 23, 4491-4496 (2011).
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  4. E. Fortunato, N. Correia, P. Barquinha, L. Perreira, G. Gonçalves, R. Martins, "High-performance flexible hybrid field-effect transistors based on cellulose fiber paper," IEEE Electron Device Lett. 29, 988-990 (2008).
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  6. R. Martins, P. Barquinha, L. Perreira, N. Correia, G. Gonçalves, I. Ferreira, E. Fortunato, "Selective floating gate non-volatile paper memory transistor," Phys. Status Solidi RRL, nr.3 9, 308-310 (2009).
  7. J. F. Wager, D. A. Keszler, R. E. Presley, Transparent Electronics (Springer, 2008).
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  13. M. Nistor, N. B. Mandache, J. Perrière, C. Hebert, F. Gherendi, W. Seiler, "Growth, structural and electrical properties of polar ZnO thin films on MgO (100) substrates," Thin Solid Films 519, 3959-3964 (2011).
  14. S. Tricot, M. Nistor, E. Millon, C. Boulmer-Leborgne, N. B. Mandache, J. Perrière, W. Seiler, "Epitaxial ZnO thin films grown by pulsed electron beam deposition," Surf. Sci. 604, 2024-2030 (2010).
  15. M. Nistor, F. Gherendi, M. Magureanu, N. B. Mandache, "Time-resolved spectroscopic study of a pulsed electron beam ablation plasma," J. Optoelectron. Adv. Mater. 7, 979-984 (2005).
  16. E. Le Boulbar, E. Millon, J. Mathias, C. Boulmer-Leborgne, M. Nistor, F. Gherendi, N. Sbaï, J. B. Quoirin, "Pure and Nb-doped ${{TiO}}_{1.5}$ films grown by pulsed-laser deposition for transparent PN homojunctions," Appl. Surf. Sci. 257, 5380-5383 (2011).
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  18. W. Lim, E. A. Douglas, S.-H. Kim, D. P. Norton, S. J. Pearton, F. Ren, H. Shen, W. H. Chang, "High mobility ${{InGaZnO}}_{4}$ thin-film transistors on paper," Appl. Phys. Lett. 94, (2009) Art. ID 072103.

2011 (7)

R. Martins, I. Ferreira, E. Fortunato, "Electronics with and on paper," Phys. Status Solidi RRL, nr 5 9, 332-335 (2011).

R. Martins, A. Nathan, R. Barros, L. Pereira, P. Barquinha, N. Correia, R. Costa, A. Ahnood, I. Ferreira, E. Fortunato, "Complementary metal oxide semiconductor technology with and on paper," Adv. Mater. 23, 4491-4496 (2011).

D. Tobjörk, R. Österbacka, "Paper electronics," Adv. Mater. 23, 1935-1961 (2011).

J. Jiang, J. Sun, W. Dou, B. Zhou, Q. Wan, "In-plane-gate indium-tin-oxide thin-film transistors self-assembled on paper substrates," Appl. Phys. Lett. 98, (2011) Art. ID 113507.

M. Nistor, N. B. Mandache, J. Perrière, C. Hebert, F. Gherendi, W. Seiler, "Growth, structural and electrical properties of polar ZnO thin films on MgO (100) substrates," Thin Solid Films 519, 3959-3964 (2011).

E. Le Boulbar, E. Millon, J. Mathias, C. Boulmer-Leborgne, M. Nistor, F. Gherendi, N. Sbaï, J. B. Quoirin, "Pure and Nb-doped ${{TiO}}_{1.5}$ films grown by pulsed-laser deposition for transparent PN homojunctions," Appl. Surf. Sci. 257, 5380-5383 (2011).

M. Nistor, A. Petitmangin, C. Hebert, W. Seiler, "Nanocomposite oxide thin films grown by pulsed energy beam deposition," Appl. Surf. Sci. 257, 5337-5340 (2011).

2010 (1)

S. Tricot, M. Nistor, E. Millon, C. Boulmer-Leborgne, N. B. Mandache, J. Perrière, W. Seiler, "Epitaxial ZnO thin films grown by pulsed electron beam deposition," Surf. Sci. 604, 2024-2030 (2010).

2009 (3)

R. Martins, P. Barquinha, L. Perreira, N. Correia, G. Gonçalves, I. Ferreira, E. Fortunato, "Selective floating gate non-volatile paper memory transistor," Phys. Status Solidi RRL, nr.3 9, 308-310 (2009).

W. Lim, E. A. Douglas, S.-H. Kim, D. P. Norton, S. J. Pearton, F. Ren, H. Shen, W. H. Chang, "High mobility ${{InGaZnO}}_{4}$ thin-film transistors on paper," Appl. Phys. Lett. 94, (2009) Art. ID 072103.

J. Sun, Q. Wan, A. Lu, J. Jiang, "Low-voltage electric-double-layer paper transistors gated by microporous ${{SiO}}_{2}$ processed at room temperature," Appl. Phys.Lett. 95, (2009) Art. ID 222108.

2008 (3)

M. Nistor, N. B. Mandache, J. Perrière, "Pulsed electron beam deposition of oxides thin films," J. Phys. D: Appl. Phys. 41, (2008) Art. ID 165205.

E. Fortunato, N. Correia, P. Barquinha, L. Perreira, G. Gonçalves, R. Martins, "High-performance flexible hybrid field-effect transistors based on cellulose fiber paper," IEEE Electron Device Lett. 29, 988-990 (2008).

R. Martins, P. Barquinha, L. Perreira, N. Correia, G. Gonçalves, I. Ferreira, E. Fortunato, "Write-erase and read paper memory transistor," Appl. Phys. Lett. 93, (2008) Art. ID 203501.

2005 (1)

M. Nistor, F. Gherendi, M. Magureanu, N. B. Mandache, "Time-resolved spectroscopic study of a pulsed electron beam ablation plasma," J. Optoelectron. Adv. Mater. 7, 979-984 (2005).

2004 (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

1998 (1)

J. Gonzalo, R. G.-S. Roman, J. Perriere, C. N. Afonso, R. Perez-Casero, "Pressure effects during pulsed-laser deposition of barium titanate thin films," Appl. Phys. A 66, 487-487 (1998).

Adv. Mater. (2)

R. Martins, A. Nathan, R. Barros, L. Pereira, P. Barquinha, N. Correia, R. Costa, A. Ahnood, I. Ferreira, E. Fortunato, "Complementary metal oxide semiconductor technology with and on paper," Adv. Mater. 23, 4491-4496 (2011).

D. Tobjörk, R. Österbacka, "Paper electronics," Adv. Mater. 23, 1935-1961 (2011).

Appl. Phys. A (1)

J. Gonzalo, R. G.-S. Roman, J. Perriere, C. N. Afonso, R. Perez-Casero, "Pressure effects during pulsed-laser deposition of barium titanate thin films," Appl. Phys. A 66, 487-487 (1998).

Appl. Phys. Lett. (1)

W. Lim, E. A. Douglas, S.-H. Kim, D. P. Norton, S. J. Pearton, F. Ren, H. Shen, W. H. Chang, "High mobility ${{InGaZnO}}_{4}$ thin-film transistors on paper," Appl. Phys. Lett. 94, (2009) Art. ID 072103.

Appl. Phys.Lett. (1)

J. Sun, Q. Wan, A. Lu, J. Jiang, "Low-voltage electric-double-layer paper transistors gated by microporous ${{SiO}}_{2}$ processed at room temperature," Appl. Phys.Lett. 95, (2009) Art. ID 222108.

Appl. Surf. Sci. (1)

M. Nistor, A. Petitmangin, C. Hebert, W. Seiler, "Nanocomposite oxide thin films grown by pulsed energy beam deposition," Appl. Surf. Sci. 257, 5337-5340 (2011).

Appl. Phys. Lett. (2)

J. Jiang, J. Sun, W. Dou, B. Zhou, Q. Wan, "In-plane-gate indium-tin-oxide thin-film transistors self-assembled on paper substrates," Appl. Phys. Lett. 98, (2011) Art. ID 113507.

R. Martins, P. Barquinha, L. Perreira, N. Correia, G. Gonçalves, I. Ferreira, E. Fortunato, "Write-erase and read paper memory transistor," Appl. Phys. Lett. 93, (2008) Art. ID 203501.

Appl. Surf. Sci. (1)

E. Le Boulbar, E. Millon, J. Mathias, C. Boulmer-Leborgne, M. Nistor, F. Gherendi, N. Sbaï, J. B. Quoirin, "Pure and Nb-doped ${{TiO}}_{1.5}$ films grown by pulsed-laser deposition for transparent PN homojunctions," Appl. Surf. Sci. 257, 5380-5383 (2011).

IEEE Electron Device Lett. (1)

E. Fortunato, N. Correia, P. Barquinha, L. Perreira, G. Gonçalves, R. Martins, "High-performance flexible hybrid field-effect transistors based on cellulose fiber paper," IEEE Electron Device Lett. 29, 988-990 (2008).

J. Optoelectron. Adv. Mater. (1)

M. Nistor, F. Gherendi, M. Magureanu, N. B. Mandache, "Time-resolved spectroscopic study of a pulsed electron beam ablation plasma," J. Optoelectron. Adv. Mater. 7, 979-984 (2005).

J. Phys. D: Appl. Phys. (1)

M. Nistor, N. B. Mandache, J. Perrière, "Pulsed electron beam deposition of oxides thin films," J. Phys. D: Appl. Phys. 41, (2008) Art. ID 165205.

Nature (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

Phys. Status Solidi RRL, nr.3 (1)

R. Martins, P. Barquinha, L. Perreira, N. Correia, G. Gonçalves, I. Ferreira, E. Fortunato, "Selective floating gate non-volatile paper memory transistor," Phys. Status Solidi RRL, nr.3 9, 308-310 (2009).

Phys. Status Solidi RRL, nr 5 (1)

R. Martins, I. Ferreira, E. Fortunato, "Electronics with and on paper," Phys. Status Solidi RRL, nr 5 9, 332-335 (2011).

Surf. Sci. (1)

S. Tricot, M. Nistor, E. Millon, C. Boulmer-Leborgne, N. B. Mandache, J. Perrière, W. Seiler, "Epitaxial ZnO thin films grown by pulsed electron beam deposition," Surf. Sci. 604, 2024-2030 (2010).

Thin Solid Films (1)

M. Nistor, N. B. Mandache, J. Perrière, C. Hebert, F. Gherendi, W. Seiler, "Growth, structural and electrical properties of polar ZnO thin films on MgO (100) substrates," Thin Solid Films 519, 3959-3964 (2011).

Other (1)

J. F. Wager, D. A. Keszler, R. E. Presley, Transparent Electronics (Springer, 2008).

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