Abstract

Double-gate (DG) polysilicon thin-film transistors (TFTs) are considered very important for future large area electronics, due to their capability to electrically control TFT characteristics. The scope of this paper is to study how high performance DG polysilicon TFT degradation is affected by shrinking of the channel length. We applied equivalent dc stress in DG TFTs of different top gate length ${L}_{\rm top}$, with channel width ${W} = 8 \ \mu$m and bottom gate length fixed at ${L}_{\rm bot} = 4 \ \mu$m. Also, to ensure that we only see effects from the top gate operation, the bottom gate bias was kept constant at ${-}$3 V, pushing the carriers towards the top interface. Degradation seemed to be much more intense in the longer device, despite the scaling of the stress field. This could be attributed to the larger number of sub-boundaries and grain boundaries as ${L}_{\rm top}$ increases, causing larger scattering of the carriers towards the top interface and larger grain-boundary state creation. Low frequency noise measurements support the conclusions regarding the proposed degradation mechanisms of DG polysilicon TFTs with shrinking channel length.

© 2012 IEEE

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  3. A. T. Voutsas, "Assessment of the performance of laser-based lateral-crystallization technology via analysis and modeling of polysilicon thin-film-transistor mobility," IEEE Trans. Electron Devices 50, 1494 (2003).
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2012 (1)

D. C. Moschou, F. V. Farmakis, D. N. Kouvatsos, A. T. Voutsas, " ${\rm V}_{\rm g,max} - {\rm V}_{\rm th}$ : A new electrical characterization parameter reflecting the polysilicon film quality of LTPS TFTs," Microelectron. Eng. 90, 76 (2012).

2010 (1)

P. Gaucci, A. Valletta, L. Mariucci, A. Pecora, L. Mailo, G. Fortunato, "Analysis of self-heating-related instability in self-aligned p-channel polycrystalline-silicon thin-film transistors," IEEE Electron Device Lett. 31, 830 (2010).

2009 (2)

L. Maiolo, M. Cuscuna, L. Mariucci, A. Minotti, A. Pecora, D. Simeone, A. Valletta, G. Fortunato, "Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimide," Thin Solid Films 517, 6371 (2009).

Z. Celik-Butler, S. P. Devireddy, H.-H. Tseng, P. Tobin, A. Zlotnicka, "A low-frequency noise model for advanced gate-stack MOSFETs," Microelectron. Rel. 49, 103-112 (2009).

2007 (3)

D. N. Kouvatsos, F. V. Farmakis, D. C. Moschou, G. P. Kontogiannopoulos, G. J. Papaioannou, A. T. Voutsas, "Characterization of double gate TFTs fabricated in advanced SLS E LA polycrystalline silicon films," Solid-State Electron. 51, 936 (2007).

F. V. Farmakis, G. P. Kontogiannopoulos, D. N. Kouvatsos, A. T. Voutsas, "Degradation of double-gate polycrystalline silicon TFTs due to hot carrier stress," Microelectron. Rel. 47, 1434 (2007).

J.-T. Lin, Y.-C. Eng, "A novel blocking technology for improving the short-channel effects in polycrystalline silicon TFT devices," IEEE Trans. Electron Devices 54, 3238 (2007).

2005 (1)

G. Fortunato, A. Valletta, P. Gaucci, L. Mariucci, S. D. Brotherton, "Short channel effects in polysilicon thin film transistors," Thin Solid Films 487, 221 (2005).

2003 (1)

A. T. Voutsas, "Assessment of the performance of laser-based lateral-crystallization technology via analysis and modeling of polysilicon thin-film-transistor mobility," IEEE Trans. Electron Devices 50, 1494 (2003).

2002 (2)

S. Inoue, S. Utsunomiya, T. Saeki, T. Shimoda, "Surface-free technology by laser annealing (SUFTLA) and its application to poly-Si TFT-LCDs on plastic film with integrated drivers," IEEE Trans. Electron Devices 49, 1353 (2002).

S. Inoue, H. Ohshima, T. Shimod, "Analysis of degradation phenomenon caused by self-heating in low-temperature-processed polycrystalline silicon thin film transistors," Jpn J. Appl. Phys. 41, 6313 (2002).

1998 (1)

L. Mariucci, G. Fortunato, R. Carluccio, A. Pecora, S. Giovannini, F. Massussi, L. Colalongo, M. Valdinoci, "Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors," J. Appl. Phys. 84โ€“4, 2341 (1998).

1997 (1)

S. Giovannini, R. Carluccio, L. Mariucci, A. Pecora, G. Fortunato, "Hot-carrier-induced modifications to the noise performance of polycrystalline silicon thin-film transistors," Appl. Phys. Lett. 71, 1216 (1997).

1994 (1)

T.-J. King, M. G. Hack, I.-W. Wu, "Effective density-of-states distributions for accurate modeling of polycrystalline-silicon thin-film transistors," J. Appl. Phys. 75, 908 (1994).

1993 (1)

A. Rolland, J. Richard, J. P. Kleider, D. Mencaraglia, "Electrical properties of amorphous silicon transistors and MIS-devices: Comparative study of top nitride and bottom nitride configurations," J. Electrochem. Soc. 140, 3679-3683 (1993).

1991 (1)

G. Ghibaudo, O. Roux, C. Nguyen-Duc, F. Balestra, J. Brini, Phys. Status Solid. (A): Appl. Res. 124, 571-81 (1991) 1991.

1989 (2)

A. G. Lewis, T. Y. Huang, I.-W. Wu, R. H. Bruce, A. Chiang, "Physical mechanisms for short channel effects in polysilicon thin films transistors," Proc. IEEE IEDM'89 13.4.1, 349 (1989).

R. Jayaraman, C. G. Sodini, "A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon," IEEE Trans. Electron Devices 36, 1773-1782 (1989).

1987 (1)

Z. Celik-Butler, T. Y. Hsiang, "Spectral dependence of $1/{\rm f}^{\gamma}$ noise on gate bias in n-MOSFETs," Solid State Electron. 30, 419-423 (1987).

1986 (1)

C. Surya, T. Y. Hsiang, "Theory and experiment on the $1/{\rm f}^{\gamma}$ noise in p-channel metal-oxide-semiconductor field-effect transistors at low drain bias," Phys. Rev. 33, 4498 (1986).

Appl. Phys. Lett. (1)

S. Giovannini, R. Carluccio, L. Mariucci, A. Pecora, G. Fortunato, "Hot-carrier-induced modifications to the noise performance of polycrystalline silicon thin-film transistors," Appl. Phys. Lett. 71, 1216 (1997).

IEEE Trans. Electron Devices (1)

A. T. Voutsas, "Assessment of the performance of laser-based lateral-crystallization technology via analysis and modeling of polysilicon thin-film-transistor mobility," IEEE Trans. Electron Devices 50, 1494 (2003).

IEEE Electron Device Lett. (1)

P. Gaucci, A. Valletta, L. Mariucci, A. Pecora, L. Mailo, G. Fortunato, "Analysis of self-heating-related instability in self-aligned p-channel polycrystalline-silicon thin-film transistors," IEEE Electron Device Lett. 31, 830 (2010).

IEEE Trans. Electron Devices (3)

J.-T. Lin, Y.-C. Eng, "A novel blocking technology for improving the short-channel effects in polycrystalline silicon TFT devices," IEEE Trans. Electron Devices 54, 3238 (2007).

S. Inoue, S. Utsunomiya, T. Saeki, T. Shimoda, "Surface-free technology by laser annealing (SUFTLA) and its application to poly-Si TFT-LCDs on plastic film with integrated drivers," IEEE Trans. Electron Devices 49, 1353 (2002).

R. Jayaraman, C. G. Sodini, "A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon," IEEE Trans. Electron Devices 36, 1773-1782 (1989).

J. Appl. Phys. (2)

T.-J. King, M. G. Hack, I.-W. Wu, "Effective density-of-states distributions for accurate modeling of polycrystalline-silicon thin-film transistors," J. Appl. Phys. 75, 908 (1994).

L. Mariucci, G. Fortunato, R. Carluccio, A. Pecora, S. Giovannini, F. Massussi, L. Colalongo, M. Valdinoci, "Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors," J. Appl. Phys. 84โ€“4, 2341 (1998).

J. Electrochem. Soc. (1)

A. Rolland, J. Richard, J. P. Kleider, D. Mencaraglia, "Electrical properties of amorphous silicon transistors and MIS-devices: Comparative study of top nitride and bottom nitride configurations," J. Electrochem. Soc. 140, 3679-3683 (1993).

Jpn J. Appl. Phys. (1)

S. Inoue, H. Ohshima, T. Shimod, "Analysis of degradation phenomenon caused by self-heating in low-temperature-processed polycrystalline silicon thin film transistors," Jpn J. Appl. Phys. 41, 6313 (2002).

Microelectron. Eng. (1)

D. C. Moschou, F. V. Farmakis, D. N. Kouvatsos, A. T. Voutsas, " ${\rm V}_{\rm g,max} - {\rm V}_{\rm th}$ : A new electrical characterization parameter reflecting the polysilicon film quality of LTPS TFTs," Microelectron. Eng. 90, 76 (2012).

Microelectron. Rel. (2)

F. V. Farmakis, G. P. Kontogiannopoulos, D. N. Kouvatsos, A. T. Voutsas, "Degradation of double-gate polycrystalline silicon TFTs due to hot carrier stress," Microelectron. Rel. 47, 1434 (2007).

Z. Celik-Butler, S. P. Devireddy, H.-H. Tseng, P. Tobin, A. Zlotnicka, "A low-frequency noise model for advanced gate-stack MOSFETs," Microelectron. Rel. 49, 103-112 (2009).

Phys. Rev. (1)

C. Surya, T. Y. Hsiang, "Theory and experiment on the $1/{\rm f}^{\gamma}$ noise in p-channel metal-oxide-semiconductor field-effect transistors at low drain bias," Phys. Rev. 33, 4498 (1986).

Phys. Status Solid. (A): Appl. Res. (1)

G. Ghibaudo, O. Roux, C. Nguyen-Duc, F. Balestra, J. Brini, Phys. Status Solid. (A): Appl. Res. 124, 571-81 (1991) 1991.

Proc. IEEE IEDM'89 (1)

A. G. Lewis, T. Y. Huang, I.-W. Wu, R. H. Bruce, A. Chiang, "Physical mechanisms for short channel effects in polysilicon thin films transistors," Proc. IEEE IEDM'89 13.4.1, 349 (1989).

Solid State Electron. (1)

Z. Celik-Butler, T. Y. Hsiang, "Spectral dependence of $1/{\rm f}^{\gamma}$ noise on gate bias in n-MOSFETs," Solid State Electron. 30, 419-423 (1987).

Solid-State Electron. (1)

D. N. Kouvatsos, F. V. Farmakis, D. C. Moschou, G. P. Kontogiannopoulos, G. J. Papaioannou, A. T. Voutsas, "Characterization of double gate TFTs fabricated in advanced SLS E LA polycrystalline silicon films," Solid-State Electron. 51, 936 (2007).

Thin Solid Films (2)

L. Maiolo, M. Cuscuna, L. Mariucci, A. Minotti, A. Pecora, D. Simeone, A. Valletta, G. Fortunato, "Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimide," Thin Solid Films 517, 6371 (2009).

G. Fortunato, A. Valletta, P. Gaucci, L. Mariucci, S. D. Brotherton, "Short channel effects in polysilicon thin film transistors," Thin Solid Films 487, 221 (2005).

Other (6)

T. Matsuo, T. Muramatsu, "CG silicon technology and development of system on panel," Proc. Soc. Inf. Display Int. Symp. (2004) pp. 856.

G. P. Kontogiannopoulos, D. C. Moschou, D. N. Kouvatsos, G. J. Papaioannou, A. T. Voutsas, "Short channel effects in SLS ELA polysilicon TFTs," Proc. 5th ITC (2009) pp. 70.

A. L. McWorter, Semiconductor Surface Physics (Univ. Pennsylvania Press, 1957) pp. 207.

R. Talmat, H. Achour, B. Cretu, J.-M. Routoure, A. Benfdila, R. Carin, N. Collaert, A. Mercha, E. Somoen, C. Claeys, "Assessment of temperature dependence of the low frequency noise in unstrained and strained FinFETs," 21st Int. Conf. on Noise and Fluctuations (2011) pp. 131-134.

N. B. Lukyanchikova, Noise and Fluctuations Control in Electronic Devices (American Scientific, 2002) pp. 201-33.

G. Ghibaudo, J. Jomaah, "Low frequency noise and fluctuations in sub 0.1 $\mu$ m bulk and SOI CMOS technologies," Proc. 25th Int. Conf. on Microelectron. (MIEL 2006) pp. 551-555.

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