Abstract

We propose underwater laser annealing (WLA) for the inactivation of electrical defects in polycrystalline silicon thin-film transistors (poly-Si TFTs) at super low-temperature. This technique can reduce the temperature of inactivation process drastically, and it requires only UV laser and deionized water. We performed WLA after the fabrication of top-gate type poly-Si TFTs. After WLA, the field-effect mobility of poly-Si TFTs increased from 52 to 72 cm $^{2}/{{V}}\cdot{{sec}}$ . The TFT surface was exposed to water vapor which was generated by laser irradiation, resulting that electrical defects were inactivated by active species in water vapor.

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  1. T. Sameshima, S. Usui, M. Sekiya, "XeCl excimer laser annealing used in the fabrication of poly-Si TFTs," IEEE Electron Device Lett. EDL-7, 276-278 (1986).
  2. S. Uchikoga, N. Ibaraki, "Low temperature poly-Si TFT-LCD by excimer laser anneal," Thin Solid Films 383, 19-24 (2001).
  3. S. J. Park, Y. M. Ku, E. H. Kim, J. Jang, K. H. Kim, C. O. Kim, "Selective crystallization of amorphous silicon thin film by a CW green laser," J. Non-Cryst. Solids. 352, 993-997 (2006).
  4. K. Yamasaki, E. Machida, M. Horita, Y. Ishikawa, Y. Uraoka, Proc. AM-FPD11 (2011) pp. 121.
  5. W.-J. Nam, H.-J. Lee, H.-S. Shin, S.-G. Park, M.-K. Han, "Low-voltage driven P-type polycrystalline thin-films transistor integrated gate driver circuits for low-cost chip on glass panel," Jpn. J. Appl. Phys. 45, 4389-4391 (2006).
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  7. M. C. Lee, S. M. Han, S. H. Kang, M. Y. Shin, M. K. Han, "Poly-Si TFT fabricated at 150 $^{\circ}$ C using ICP-CVD and excimer laser annealing for plastic substrates," IEDM'03 Tech. Dig. (2003) pp. 8.7.1-8.7.4.
  8. Y. C. Wu, T. C. Chang, P. T. Liu, Y. C. Wu, C. W. Chou, C. H. Tu, J. C. Lou, C. Y. Chang, "Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dopant metal-induced lateral crystallization," Appl. Phys. Lett. 87, 143504-143507 (2005).
  9. D. P. Gosain, T. Noguchi, S. Usui, "High mobility thin film transistors fabricated on a plastic substrates at a processing temperature of 110 $^{\circ}$ C," Jpn. J. Appl. Phys. 39, L179-L181 (2000).
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  12. H. Lin, C. Hung, W. Chen, Z. Lin, H. Hsu, T. Hunag, "Origin of hysteresis in current-voltage characteristics of polycrystalline silicon thin-film transistors," J. Appl. Phys. 105, 054502-054508 (2009).
  13. S. Inoue, M. Kimura, T. J. Shimoda, "Analysis and classification of degradation phenomena in polycrystalline-silicon thin films transistors fabricated by a low-temperature process using emission light microscopy," Jpn. Appl. Phys. 42, 1168-1172 (2003).
  14. M. Cao, T. Zhao, K. C. Saraswat, J. D. Plummer, "Study on hydrogenation of polycrystalline thin film transistors by ion implantation," IEEE Trans. Electron Devices. 42, 1134-1140 (1995).
  15. Y. Uraoka, M. Miyashita, Y. Sugawara, H. Yano, T. Hatayama, T. Fuyuki, T. Sameshima, "Improvement of reliability in low-temperature polycrystalline silicon thin-film transistors by water vapor annealing," Jpn. J. Appl. Phys. 45, 5657-5661 (2006).
  16. T. Sameshima, M. Satoh, K. Sakamoto, K. Ozaki, K. Saitoh, "Heat treatment of amorphous and polycrystalline silicon thin films with high-pressure H $_{2}$ O vapor," Jpn. J. Appl. Phys. 37, 4254-4257 (1998).
  17. T. Sameshima, M. Satoh, "Improvement of SiO $_{2}$ properties by heating treatment in high pressure H $_{2}$ O vapor," Jpn. J. Appl. Phys. 36, L687-L689 (1997).
  18. R. Martins, L. Raniero, L. Pereira, "Nanostructured silicon and its application to solar cells," Philosophical Magazine 89, 2699-2721 (2009).
  19. Y. Yogoro, A. Masuda, H. Matsumura, "Crystallization by excimer laser annealing for a-Si:H films with low hydrogen content prepared by Cat-CVD," Thin Solid Films 430, 296-299 (2003).
  20. Y. Uraoka, M. Miyashita, Y. Sugawara, H. Yano, T. Hatayama, T. Fuyuki, T. Sameshima, "Improvement of reliability in low-temperature polycrystalline silicon thin-films transistors by water vapor annealing," 45, 5657-5661 (2006).
  21. E. Machida, M. Horita, Y. Ishikawa, Y. Uraoka, T. Okuyama, H. Ikenoue, "Super low-temperature crystallization of polycrystalline silicon thin films by underwater laser annealing," Proc. 8th Int. Thin-Film Transistor Conf. (2012) pp. 29.

2009 (2)

H. Lin, C. Hung, W. Chen, Z. Lin, H. Hsu, T. Hunag, "Origin of hysteresis in current-voltage characteristics of polycrystalline silicon thin-film transistors," J. Appl. Phys. 105, 054502-054508 (2009).

R. Martins, L. Raniero, L. Pereira, "Nanostructured silicon and its application to solar cells," Philosophical Magazine 89, 2699-2721 (2009).

2006 (4)

Y. Uraoka, M. Miyashita, Y. Sugawara, H. Yano, T. Hatayama, T. Fuyuki, T. Sameshima, "Improvement of reliability in low-temperature polycrystalline silicon thin-film transistors by water vapor annealing," Jpn. J. Appl. Phys. 45, 5657-5661 (2006).

Y. Uraoka, M. Miyashita, Y. Sugawara, H. Yano, T. Hatayama, T. Fuyuki, T. Sameshima, "Improvement of reliability in low-temperature polycrystalline silicon thin-films transistors by water vapor annealing," 45, 5657-5661 (2006).

S. J. Park, Y. M. Ku, E. H. Kim, J. Jang, K. H. Kim, C. O. Kim, "Selective crystallization of amorphous silicon thin film by a CW green laser," J. Non-Cryst. Solids. 352, 993-997 (2006).

W.-J. Nam, H.-J. Lee, H.-S. Shin, S.-G. Park, M.-K. Han, "Low-voltage driven P-type polycrystalline thin-films transistor integrated gate driver circuits for low-cost chip on glass panel," Jpn. J. Appl. Phys. 45, 4389-4391 (2006).

2005 (2)

Y. C. Wu, T. C. Chang, P. T. Liu, Y. C. Wu, C. W. Chou, C. H. Tu, J. C. Lou, C. Y. Chang, "Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dopant metal-induced lateral crystallization," Appl. Phys. Lett. 87, 143504-143507 (2005).

D. M. Kim, D. S. Kim, J. S. Ro, "Dopant activation after ion shower doping for the fabrication of low-temperature poly-Si TFTs," Thin Solid Films 475, 342-347 (2005).

2003 (2)

Y. Yogoro, A. Masuda, H. Matsumura, "Crystallization by excimer laser annealing for a-Si:H films with low hydrogen content prepared by Cat-CVD," Thin Solid Films 430, 296-299 (2003).

S. Inoue, M. Kimura, T. J. Shimoda, "Analysis and classification of degradation phenomena in polycrystalline-silicon thin films transistors fabricated by a low-temperature process using emission light microscopy," Jpn. Appl. Phys. 42, 1168-1172 (2003).

2001 (1)

S. Uchikoga, N. Ibaraki, "Low temperature poly-Si TFT-LCD by excimer laser anneal," Thin Solid Films 383, 19-24 (2001).

2000 (1)

D. P. Gosain, T. Noguchi, S. Usui, "High mobility thin film transistors fabricated on a plastic substrates at a processing temperature of 110 $^{\circ}$ C," Jpn. J. Appl. Phys. 39, L179-L181 (2000).

1998 (1)

T. Sameshima, M. Satoh, K. Sakamoto, K. Ozaki, K. Saitoh, "Heat treatment of amorphous and polycrystalline silicon thin films with high-pressure H $_{2}$ O vapor," Jpn. J. Appl. Phys. 37, 4254-4257 (1998).

1997 (1)

T. Sameshima, M. Satoh, "Improvement of SiO $_{2}$ properties by heating treatment in high pressure H $_{2}$ O vapor," Jpn. J. Appl. Phys. 36, L687-L689 (1997).

1995 (1)

M. Cao, T. Zhao, K. C. Saraswat, J. D. Plummer, "Study on hydrogenation of polycrystalline thin film transistors by ion implantation," IEEE Trans. Electron Devices. 42, 1134-1140 (1995).

1994 (1)

G. Kawachi, T. Aoyama, A. Mimura, N. Konishi, "Application of ion doping and excimer laser annealing to fabrication of low-temperature polycrystalline Si thin-film transistors," Jpn. J. Appl. Phys. 33, 2092-2099 (1994).

1986 (1)

T. Sameshima, S. Usui, M. Sekiya, "XeCl excimer laser annealing used in the fabrication of poly-Si TFTs," IEEE Electron Device Lett. EDL-7, 276-278 (1986).

Appl. Phys. Lett. (1)

Y. C. Wu, T. C. Chang, P. T. Liu, Y. C. Wu, C. W. Chou, C. H. Tu, J. C. Lou, C. Y. Chang, "Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dopant metal-induced lateral crystallization," Appl. Phys. Lett. 87, 143504-143507 (2005).

IEEE Trans. Electron Devices. (1)

M. Cao, T. Zhao, K. C. Saraswat, J. D. Plummer, "Study on hydrogenation of polycrystalline thin film transistors by ion implantation," IEEE Trans. Electron Devices. 42, 1134-1140 (1995).

IEEE Electron Device Lett. (1)

T. Sameshima, S. Usui, M. Sekiya, "XeCl excimer laser annealing used in the fabrication of poly-Si TFTs," IEEE Electron Device Lett. EDL-7, 276-278 (1986).

J. Appl. Phys. (1)

H. Lin, C. Hung, W. Chen, Z. Lin, H. Hsu, T. Hunag, "Origin of hysteresis in current-voltage characteristics of polycrystalline silicon thin-film transistors," J. Appl. Phys. 105, 054502-054508 (2009).

J. Non-Cryst. Solids. (1)

S. J. Park, Y. M. Ku, E. H. Kim, J. Jang, K. H. Kim, C. O. Kim, "Selective crystallization of amorphous silicon thin film by a CW green laser," J. Non-Cryst. Solids. 352, 993-997 (2006).

Journal of Display Technology (1)

Y. Uraoka, M. Miyashita, Y. Sugawara, H. Yano, T. Hatayama, T. Fuyuki, T. Sameshima, "Improvement of reliability in low-temperature polycrystalline silicon thin-films transistors by water vapor annealing," 45, 5657-5661 (2006).

Jpn. J. Appl. Phys. (1)

D. P. Gosain, T. Noguchi, S. Usui, "High mobility thin film transistors fabricated on a plastic substrates at a processing temperature of 110 $^{\circ}$ C," Jpn. J. Appl. Phys. 39, L179-L181 (2000).

Jpn. Appl. Phys. (1)

S. Inoue, M. Kimura, T. J. Shimoda, "Analysis and classification of degradation phenomena in polycrystalline-silicon thin films transistors fabricated by a low-temperature process using emission light microscopy," Jpn. Appl. Phys. 42, 1168-1172 (2003).

Jpn. J. Appl. Phys. (5)

W.-J. Nam, H.-J. Lee, H.-S. Shin, S.-G. Park, M.-K. Han, "Low-voltage driven P-type polycrystalline thin-films transistor integrated gate driver circuits for low-cost chip on glass panel," Jpn. J. Appl. Phys. 45, 4389-4391 (2006).

Y. Uraoka, M. Miyashita, Y. Sugawara, H. Yano, T. Hatayama, T. Fuyuki, T. Sameshima, "Improvement of reliability in low-temperature polycrystalline silicon thin-film transistors by water vapor annealing," Jpn. J. Appl. Phys. 45, 5657-5661 (2006).

T. Sameshima, M. Satoh, K. Sakamoto, K. Ozaki, K. Saitoh, "Heat treatment of amorphous and polycrystalline silicon thin films with high-pressure H $_{2}$ O vapor," Jpn. J. Appl. Phys. 37, 4254-4257 (1998).

T. Sameshima, M. Satoh, "Improvement of SiO $_{2}$ properties by heating treatment in high pressure H $_{2}$ O vapor," Jpn. J. Appl. Phys. 36, L687-L689 (1997).

G. Kawachi, T. Aoyama, A. Mimura, N. Konishi, "Application of ion doping and excimer laser annealing to fabrication of low-temperature polycrystalline Si thin-film transistors," Jpn. J. Appl. Phys. 33, 2092-2099 (1994).

Philosophical Magazine (1)

R. Martins, L. Raniero, L. Pereira, "Nanostructured silicon and its application to solar cells," Philosophical Magazine 89, 2699-2721 (2009).

Thin Solid Films (1)

D. M. Kim, D. S. Kim, J. S. Ro, "Dopant activation after ion shower doping for the fabrication of low-temperature poly-Si TFTs," Thin Solid Films 475, 342-347 (2005).

Thin Solid Films (2)

S. Uchikoga, N. Ibaraki, "Low temperature poly-Si TFT-LCD by excimer laser anneal," Thin Solid Films 383, 19-24 (2001).

Y. Yogoro, A. Masuda, H. Matsumura, "Crystallization by excimer laser annealing for a-Si:H films with low hydrogen content prepared by Cat-CVD," Thin Solid Films 430, 296-299 (2003).

Other (4)

E. D. Palik, Handbook of Optical Constants of Solids (Academic, 1985).

M. C. Lee, S. M. Han, S. H. Kang, M. Y. Shin, M. K. Han, "Poly-Si TFT fabricated at 150 $^{\circ}$ C using ICP-CVD and excimer laser annealing for plastic substrates," IEDM'03 Tech. Dig. (2003) pp. 8.7.1-8.7.4.

K. Yamasaki, E. Machida, M. Horita, Y. Ishikawa, Y. Uraoka, Proc. AM-FPD11 (2011) pp. 121.

E. Machida, M. Horita, Y. Ishikawa, Y. Uraoka, T. Okuyama, H. Ikenoue, "Super low-temperature crystallization of polycrystalline silicon thin films by underwater laser annealing," Proc. 8th Int. Thin-Film Transistor Conf. (2012) pp. 29.

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