Abstract

We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semiconductor, ${{Ta}}_{2}{{O}}_{5}{{:SiO}}_{2}$ as the dielectric and ${{Ta}}_{2}{{O}}_{5}$ as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4–pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors.

© 2012 IEEE

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  1. P. Bergveld, "Thirty years of ISFETOLOGY: What happened in the past 30 years and what may happen in the next 30 years," Sensors Actuators B: Chem. 88, 1-20 (2003).
  2. M. J. Schöning, A. Poghossian, "Bio FEDs (field-effect devices): State-of-the-art and new directions," Electroanal. 18, 1893-1900 (2006).
  3. A. Poghossian, M. J. Schöning, "Detecting both physical and (bio-) chemical parameters by means of ISFET devices," Electroanal. 16, 1863-1872 (2004).
  4. F. Yan, P. Estrela, Y. Mo, P. Migliorato, H. Maeda, S. Inoue, T. Shimoda, "Polycrystalline silicon ion sensitive field effect transistors," Appl. Phys. Lett. 86, 053901-053903 (2005).
  5. D. Goncalves, D. M. F. Prazeres, V. Chu, J. P. Conde, "Amorphous silicon thin-film transistors gated through an electrolyte solution ," IEEE Electron Device Lett. 29, 1030-1033 (2008).
  6. B. Baur, J. Howgate, H. G. von Ribbeck, Y. Gawlina, V. Bandalo, G. Steinhoff, M. Stutzmann, M. Eickhoff, "Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors," Appl. Phys. Lett. 89, 183901-183903 (2006).
  7. Y. Sasaki, H. Kawarada, "Low drift and small hysteresis characteristics of diamond electrolyte-solution-gate FET," J. Phys. D: Appl. Phys. 43, 374020 (2010).
  8. A. Caboni, E. Orgiu, E. Scavetta, M. Barbaro, A. Bonfiglio, "Organic-based sensor for chemical detection in aqueous solution," Appl. Phys. Lett. 95, 123304-3 (2009).
  9. P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, D. Kuscer, M. Kosec, A. Vilà, A. Olziersky, J. R. Morante, "Low-temperature sputtered mixtures of high- $\kappa$ and high bandgap dielectrics for GIZO TFTs," J. Soc. Inf. Display 18, 762-772 (2010).
  10. P. Barquinha, L. Pereira, G. Goncalves, R. Martins, E. Fortunato, "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc. 156, H161-H168 (2009).
  11. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).
  12. H.-H. Hsieh, C.-H. Wu, C.-W. Chien, C.-K. Chen, C.-S. Yang, C.-C. Wu, "Influence of channel-deposition conditions and gate insulators on performance and stability of top-gate IGZO transparent thin-film transistors," J. Soc. Inf. isplay 18, 796-801 (2010).
  13. P. K. Nayak, J. V. Pinto, G. Gonçalves, R. Martins, E. Fortunato, "Environmental, optical, and electrical stability study of solution-processed zinc-tin-oxide thin-film transistors," J. Display Technol. 7, 640-643 (2011).
  14. J. van der Spiegel, I. Lauks, P. Chan, D. Babic, "The extended gate chemically sensitive field effect transistor as multi-species microprobe," Sensors and Actuators 4, 291-298 (1983).
  15. F. Yan, P. Estrela, Y. Mo, P. Migliorato, H. Maeda, "Polycrystalline silicon ISFETs on glass substrate," Sensors 5, 293-301 (2005).
  16. D.-S. Kim, J.-E. Park, J.-K. Shin, P. K. Kim, G. Lim, S. Shoji, "An extended gate FET-based biosensor integrated with a Si microfluidic channel for detection of protein complexes," Sensors Actuators B: Chem. 117, 488-494 (2006).
  17. M. Kamahori, Y. Ishige, M. Shimoda, "A novel enzyme immuno assay based on potentiometric measurement of molecular adsorption events by an extended-gate field-effect transistor sensor," Biosensors Bioelectron. 22, 3080-3085 (2007).
  18. A. Olziersky, P. Barquinha, A. Vila, L. Pereira, G. Goncalves, E. Fortunato, R. Martins, J. R. Morante, "Insight on the SU-8 resist as passivation layer for transparent Ga2O3-In2O3-ZnO thin-film transistors," J. Appl. Phys. 108, 064505-7 (2010).
  19. H.-S. Seo, J.-U. Bae, D.-H. Kim, Y. Park, C.-D. Kim, I. B. Kang, I.-J. Chung, J.-H. Choi, J.-M. Myoung, "Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with ${{TiO}}_{x}$ passivation layer," Electrochem. Solid-State Lett. 12, H348-H351 (2009).
  20. D.-H. Kwon, B.-W. Cho, C.-S. Kim, B.-K. Sohn, "Effects of heat treatment on Ta2O5 sensing membrane for low drift and high sensitivity pH-ISFET," Sensors and Actuators B: Chem. 34, 441-445 (1996).
  21. R. Branquinho, B. Veigas, J. V. Pinto, R. Martins, E. Fortunato, P. V. Baptista, "Real-time monitoring of PCR amplification of proto-oncogene c-MYC using a Ta2O5 electrolyte–insulator–semiconductor sensor," Biosensors Bioelectron. 28, 44-49 (2011).
  22. A. Poghossian, M. H. Abouzar, M. Sakkari, T. Kassab, Y. Han, S. Ingebrandt, A. Offenhäusser, M. J. Schöning, "Field-effect sensors for monitoring the layer-by-layer adsorption of charged macromolecules," Sensors Actuators B: Chem. 118, 163-170 (2006).
  23. N. P. Barradas, C. Jeynes, R. P. Webb, "Simulated annealing analysis of rutherford backscattering data," Appl. Phys. Lett. 71, 291-293 (1997).
  24. T. Riekkinen, J. Molarius, "Reactively sputtered tantalum pentoxide thin films for integrated capacitors," Microelectron. Eng. 70, 392-397 (2003).
  25. H. F. Winters, E. Kay, "Gas incorporation into sputtered films," J. Appl. Phys. 38, 3928-3934 (1967).
  26. S. Jamasb, S. Collins, R. L. Smith, "A physical model for drift in pH ISFETs," Sensors Actuators B: Chem. 49, 146-155 (1998).
  27. R. Branquinho, J. V. Pinto, T. Busani, P. Barquinha, L. Pereira, P. V. Baptista, R. Martins, E. Fortunato, "Plastic compatible sputtered Ta2O5 sensitive layer for oxide semiconductor TFT sensors," J. Display Technol. 9, (2013).

2013

R. Branquinho, J. V. Pinto, T. Busani, P. Barquinha, L. Pereira, P. V. Baptista, R. Martins, E. Fortunato, "Plastic compatible sputtered Ta2O5 sensitive layer for oxide semiconductor TFT sensors," J. Display Technol. 9, (2013).

2011

R. Branquinho, B. Veigas, J. V. Pinto, R. Martins, E. Fortunato, P. V. Baptista, "Real-time monitoring of PCR amplification of proto-oncogene c-MYC using a Ta2O5 electrolyte–insulator–semiconductor sensor," Biosensors Bioelectron. 28, 44-49 (2011).

P. K. Nayak, J. V. Pinto, G. Gonçalves, R. Martins, E. Fortunato, "Environmental, optical, and electrical stability study of solution-processed zinc-tin-oxide thin-film transistors," J. Display Technol. 7, 640-643 (2011).

2010

P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, D. Kuscer, M. Kosec, A. Vilà, A. Olziersky, J. R. Morante, "Low-temperature sputtered mixtures of high- $\kappa$ and high bandgap dielectrics for GIZO TFTs," J. Soc. Inf. Display 18, 762-772 (2010).

H.-H. Hsieh, C.-H. Wu, C.-W. Chien, C.-K. Chen, C.-S. Yang, C.-C. Wu, "Influence of channel-deposition conditions and gate insulators on performance and stability of top-gate IGZO transparent thin-film transistors," J. Soc. Inf. isplay 18, 796-801 (2010).

Y. Sasaki, H. Kawarada, "Low drift and small hysteresis characteristics of diamond electrolyte-solution-gate FET," J. Phys. D: Appl. Phys. 43, 374020 (2010).

A. Olziersky, P. Barquinha, A. Vila, L. Pereira, G. Goncalves, E. Fortunato, R. Martins, J. R. Morante, "Insight on the SU-8 resist as passivation layer for transparent Ga2O3-In2O3-ZnO thin-film transistors," J. Appl. Phys. 108, 064505-7 (2010).

2009

H.-S. Seo, J.-U. Bae, D.-H. Kim, Y. Park, C.-D. Kim, I. B. Kang, I.-J. Chung, J.-H. Choi, J.-M. Myoung, "Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with ${{TiO}}_{x}$ passivation layer," Electrochem. Solid-State Lett. 12, H348-H351 (2009).

A. Caboni, E. Orgiu, E. Scavetta, M. Barbaro, A. Bonfiglio, "Organic-based sensor for chemical detection in aqueous solution," Appl. Phys. Lett. 95, 123304-3 (2009).

P. Barquinha, L. Pereira, G. Goncalves, R. Martins, E. Fortunato, "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc. 156, H161-H168 (2009).

2008

D. Goncalves, D. M. F. Prazeres, V. Chu, J. P. Conde, "Amorphous silicon thin-film transistors gated through an electrolyte solution ," IEEE Electron Device Lett. 29, 1030-1033 (2008).

2007

M. Kamahori, Y. Ishige, M. Shimoda, "A novel enzyme immuno assay based on potentiometric measurement of molecular adsorption events by an extended-gate field-effect transistor sensor," Biosensors Bioelectron. 22, 3080-3085 (2007).

2006

D.-S. Kim, J.-E. Park, J.-K. Shin, P. K. Kim, G. Lim, S. Shoji, "An extended gate FET-based biosensor integrated with a Si microfluidic channel for detection of protein complexes," Sensors Actuators B: Chem. 117, 488-494 (2006).

B. Baur, J. Howgate, H. G. von Ribbeck, Y. Gawlina, V. Bandalo, G. Steinhoff, M. Stutzmann, M. Eickhoff, "Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors," Appl. Phys. Lett. 89, 183901-183903 (2006).

M. J. Schöning, A. Poghossian, "Bio FEDs (field-effect devices): State-of-the-art and new directions," Electroanal. 18, 1893-1900 (2006).

A. Poghossian, M. H. Abouzar, M. Sakkari, T. Kassab, Y. Han, S. Ingebrandt, A. Offenhäusser, M. J. Schöning, "Field-effect sensors for monitoring the layer-by-layer adsorption of charged macromolecules," Sensors Actuators B: Chem. 118, 163-170 (2006).

2005

F. Yan, P. Estrela, Y. Mo, P. Migliorato, H. Maeda, S. Inoue, T. Shimoda, "Polycrystalline silicon ion sensitive field effect transistors," Appl. Phys. Lett. 86, 053901-053903 (2005).

F. Yan, P. Estrela, Y. Mo, P. Migliorato, H. Maeda, "Polycrystalline silicon ISFETs on glass substrate," Sensors 5, 293-301 (2005).

2004

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

A. Poghossian, M. J. Schöning, "Detecting both physical and (bio-) chemical parameters by means of ISFET devices," Electroanal. 16, 1863-1872 (2004).

2003

P. Bergveld, "Thirty years of ISFETOLOGY: What happened in the past 30 years and what may happen in the next 30 years," Sensors Actuators B: Chem. 88, 1-20 (2003).

T. Riekkinen, J. Molarius, "Reactively sputtered tantalum pentoxide thin films for integrated capacitors," Microelectron. Eng. 70, 392-397 (2003).

1998

S. Jamasb, S. Collins, R. L. Smith, "A physical model for drift in pH ISFETs," Sensors Actuators B: Chem. 49, 146-155 (1998).

1997

N. P. Barradas, C. Jeynes, R. P. Webb, "Simulated annealing analysis of rutherford backscattering data," Appl. Phys. Lett. 71, 291-293 (1997).

1996

D.-H. Kwon, B.-W. Cho, C.-S. Kim, B.-K. Sohn, "Effects of heat treatment on Ta2O5 sensing membrane for low drift and high sensitivity pH-ISFET," Sensors and Actuators B: Chem. 34, 441-445 (1996).

1983

J. van der Spiegel, I. Lauks, P. Chan, D. Babic, "The extended gate chemically sensitive field effect transistor as multi-species microprobe," Sensors and Actuators 4, 291-298 (1983).

1967

H. F. Winters, E. Kay, "Gas incorporation into sputtered films," J. Appl. Phys. 38, 3928-3934 (1967).

Appl. Phys. Lett.

F. Yan, P. Estrela, Y. Mo, P. Migliorato, H. Maeda, S. Inoue, T. Shimoda, "Polycrystalline silicon ion sensitive field effect transistors," Appl. Phys. Lett. 86, 053901-053903 (2005).

N. P. Barradas, C. Jeynes, R. P. Webb, "Simulated annealing analysis of rutherford backscattering data," Appl. Phys. Lett. 71, 291-293 (1997).

Appl. Phys. Lett.

B. Baur, J. Howgate, H. G. von Ribbeck, Y. Gawlina, V. Bandalo, G. Steinhoff, M. Stutzmann, M. Eickhoff, "Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors," Appl. Phys. Lett. 89, 183901-183903 (2006).

A. Caboni, E. Orgiu, E. Scavetta, M. Barbaro, A. Bonfiglio, "Organic-based sensor for chemical detection in aqueous solution," Appl. Phys. Lett. 95, 123304-3 (2009).

Biosensors Bioelectron.

M. Kamahori, Y. Ishige, M. Shimoda, "A novel enzyme immuno assay based on potentiometric measurement of molecular adsorption events by an extended-gate field-effect transistor sensor," Biosensors Bioelectron. 22, 3080-3085 (2007).

Biosensors Bioelectron.

R. Branquinho, B. Veigas, J. V. Pinto, R. Martins, E. Fortunato, P. V. Baptista, "Real-time monitoring of PCR amplification of proto-oncogene c-MYC using a Ta2O5 electrolyte–insulator–semiconductor sensor," Biosensors Bioelectron. 28, 44-49 (2011).

Electroanal.

M. J. Schöning, A. Poghossian, "Bio FEDs (field-effect devices): State-of-the-art and new directions," Electroanal. 18, 1893-1900 (2006).

A. Poghossian, M. J. Schöning, "Detecting both physical and (bio-) chemical parameters by means of ISFET devices," Electroanal. 16, 1863-1872 (2004).

Electrochem. Solid-State Lett.

H.-S. Seo, J.-U. Bae, D.-H. Kim, Y. Park, C.-D. Kim, I. B. Kang, I.-J. Chung, J.-H. Choi, J.-M. Myoung, "Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with ${{TiO}}_{x}$ passivation layer," Electrochem. Solid-State Lett. 12, H348-H351 (2009).

IEEE Electron Device Lett.

D. Goncalves, D. M. F. Prazeres, V. Chu, J. P. Conde, "Amorphous silicon thin-film transistors gated through an electrolyte solution ," IEEE Electron Device Lett. 29, 1030-1033 (2008).

J. Appl. Phys.

A. Olziersky, P. Barquinha, A. Vila, L. Pereira, G. Goncalves, E. Fortunato, R. Martins, J. R. Morante, "Insight on the SU-8 resist as passivation layer for transparent Ga2O3-In2O3-ZnO thin-film transistors," J. Appl. Phys. 108, 064505-7 (2010).

H. F. Winters, E. Kay, "Gas incorporation into sputtered films," J. Appl. Phys. 38, 3928-3934 (1967).

J. Display Technol.

R. Branquinho, J. V. Pinto, T. Busani, P. Barquinha, L. Pereira, P. V. Baptista, R. Martins, E. Fortunato, "Plastic compatible sputtered Ta2O5 sensitive layer for oxide semiconductor TFT sensors," J. Display Technol. 9, (2013).

P. K. Nayak, J. V. Pinto, G. Gonçalves, R. Martins, E. Fortunato, "Environmental, optical, and electrical stability study of solution-processed zinc-tin-oxide thin-film transistors," J. Display Technol. 7, 640-643 (2011).

J. Electrochem. Soc.

P. Barquinha, L. Pereira, G. Goncalves, R. Martins, E. Fortunato, "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc. 156, H161-H168 (2009).

J. Phys. D: Appl. Phys.

Y. Sasaki, H. Kawarada, "Low drift and small hysteresis characteristics of diamond electrolyte-solution-gate FET," J. Phys. D: Appl. Phys. 43, 374020 (2010).

J. Soc. Inf. Display

P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, D. Kuscer, M. Kosec, A. Vilà, A. Olziersky, J. R. Morante, "Low-temperature sputtered mixtures of high- $\kappa$ and high bandgap dielectrics for GIZO TFTs," J. Soc. Inf. Display 18, 762-772 (2010).

J. Soc. Inf. isplay

H.-H. Hsieh, C.-H. Wu, C.-W. Chien, C.-K. Chen, C.-S. Yang, C.-C. Wu, "Influence of channel-deposition conditions and gate insulators on performance and stability of top-gate IGZO transparent thin-film transistors," J. Soc. Inf. isplay 18, 796-801 (2010).

Microelectron. Eng.

T. Riekkinen, J. Molarius, "Reactively sputtered tantalum pentoxide thin films for integrated capacitors," Microelectron. Eng. 70, 392-397 (2003).

Nature

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

Sensors Actuators B: Chem.

A. Poghossian, M. H. Abouzar, M. Sakkari, T. Kassab, Y. Han, S. Ingebrandt, A. Offenhäusser, M. J. Schöning, "Field-effect sensors for monitoring the layer-by-layer adsorption of charged macromolecules," Sensors Actuators B: Chem. 118, 163-170 (2006).

Sensors

F. Yan, P. Estrela, Y. Mo, P. Migliorato, H. Maeda, "Polycrystalline silicon ISFETs on glass substrate," Sensors 5, 293-301 (2005).

Sensors Actuators B: Chem.

D.-S. Kim, J.-E. Park, J.-K. Shin, P. K. Kim, G. Lim, S. Shoji, "An extended gate FET-based biosensor integrated with a Si microfluidic channel for detection of protein complexes," Sensors Actuators B: Chem. 117, 488-494 (2006).

P. Bergveld, "Thirty years of ISFETOLOGY: What happened in the past 30 years and what may happen in the next 30 years," Sensors Actuators B: Chem. 88, 1-20 (2003).

S. Jamasb, S. Collins, R. L. Smith, "A physical model for drift in pH ISFETs," Sensors Actuators B: Chem. 49, 146-155 (1998).

Sensors and Actuators

J. van der Spiegel, I. Lauks, P. Chan, D. Babic, "The extended gate chemically sensitive field effect transistor as multi-species microprobe," Sensors and Actuators 4, 291-298 (1983).

Sensors and Actuators B: Chem.

D.-H. Kwon, B.-W. Cho, C.-S. Kim, B.-K. Sohn, "Effects of heat treatment on Ta2O5 sensing membrane for low drift and high sensitivity pH-ISFET," Sensors and Actuators B: Chem. 34, 441-445 (1996).

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