Abstract

The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered ${{Ta}}_{2}{{O}}_{5}$ was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 $^{\circ}{{C}}$ and crystallize at 700 $^{\circ}{{C}}$ in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous ${{Ta}}_{2}{{O}}_{5}$ sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 $^{\circ}{{C}}$ pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 $^{\circ}{{C}}$, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.

© 2012 IEEE

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