Abstract

Thin-film transistors (TFTs) with indium gallium oxide and aluminum indium oxide as a channel layer were fabricated via an aqueous route with low temperature annealing. The effects of chemical composition on electrical performance were examined. The fabricated IGO and AIO TFTs exhibited mobility in the range of 3.9–10.7 cm$^{2}\cdot{{V}}^{-1}\cdot{{s}}^{-1}$ with an on-to-off current ratio over $10^{6}$ and a sub-threshold swing of below 0.7 V/dec at the optimized composition. The optimized IGO and AIO thin-films were in an amorphous phase, which has an advantage in large area uniformity. Finally, we performed a positive and negative bias test on the optimized IGO and AIO TFTs to understand the resistance to external bias stress. The turn-on voltage shift of the optimized IGO and AIO TFTs, annealed at 300 $^{\circ}$C, were 1.45 V (negative bias stress), and 1.56 V (positive bias stress) with 3600 s stress, respectively.

© 2013 IEEE

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  2. T. Kamiya, H. Hosono, "Material characteristics and applications of transparent amorphous oxide semiconductors," NPG Asia Mater. 2, 15-22 (2010).
  3. R. A. Street, "Thin-film transistors," Adv. Mater. 21, 2007-2022 (2009).
  4. Y. Sun, J. A. Rogers, "Inorganic semiconductors for flexible electronics," Adv. Mater. 19, 1897-1916 (2007).
  5. A. C. Arias, J. D. MacKenzie, I. McCulloch, J. Rivnay, A. Salleo, "Materials and applications for large area electronics: Solution-based approaches," Chem. Rev. 110, 3-24 (2010).
  6. E. M. C. Fortunato, P. M. C. Barquinha, A. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, R. F. P. Martins, "Fully transparent ZnO thin-film transistor produced at room temperature," Adv. Mater. 17, 590-594 (2005).
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  14. A. Bashir, P. H. Wöbkenberg, J. Smith, J. M. Ball, G. Adamopoulos, D. D. C. Bradley, T. D. Anthopoulos, "High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere," Adv. Mater. 21, 2226-2231 (2009).
  15. B. Sun, H. Sirringhaus, "Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods," Nano Lett. 5, 2408-2413 (2005).
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  17. Y. H. Hwang, J.-S. Seo, J. M. Yun, H. Park, S. Yang, S.-H. K. Park, B.-S. Bae, "An ‘aqueous route’ for low temperature processable oxide flexible transparent thin-film transistors on a plastic substrate," NPG Asia Mater. .
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  21. J. K. Jeong, "The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays," Semicond. Sci. Technol. 26, 034008 (2011).

2011

C. Avis, J. Jang, "High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol-gel method," J. Mater. Chem. 21, 10649-10652 (2011).

M. J. Seok, M. H. Choi, M. Mativenga, D. Geng, D. Y. Kim, J. Jang, "A full-swing a-IGZO TFT-based inverter with a top-gate-bias-induced depletion load," IEEE Trans. Electron Devices 32, 1089-1091 (2011).

K. K. Banger, "Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol-gel on chip’ process," Nature Mater. 10, 45-50 (2011).

J. K. Jeong, "The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays," Semicond. Sci. Technol. 26, 034008 (2011).

2010

J. F. Conley, "Instabilities in amorphous oxide semiconductor thin film transistors," IEEE Trans. Device Mater. Rel. 10, 460-475 (2010).

G. O. T. Kamiya, K. Nomura, H. Hosono, "Present status of amorphous In–Ga–Zn–O thin-film transistors," Sci. Technol. Adv. Mater. 11, 1-23 (2010).

T. Kamiya, H. Hosono, "Material characteristics and applications of transparent amorphous oxide semiconductors," NPG Asia Mater. 2, 15-22 (2010).

A. C. Arias, J. D. MacKenzie, I. McCulloch, J. Rivnay, A. Salleo, "Materials and applications for large area electronics: Solution-based approaches," Chem. Rev. 110, 3-24 (2010).

2009

R. A. Street, "Thin-film transistors," Adv. Mater. 21, 2007-2022 (2009).

Y. H. Hwang, J. H. Jeon, S.-J. Seo, B.-S. Bae, "Solution-processed, high-performance aluminum indium oxide thin-film transistors fabricated at low temperature," Electrochem. Solid-State Lett. 12, H336-H339 (2009).

S. J. Seo, C. G. Choi, Y. H. Hwang, B. S. Bae, "High performance solution-processed amorphous zinc tin oxide thin film transistor," J. Phys. D, Appl. Phys. 42, 035-106 (2009).

A. Bashir, P. H. Wöbkenberg, J. Smith, J. M. Ball, G. Adamopoulos, D. D. C. Bradley, T. D. Anthopoulos, "High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere," Adv. Mater. 21, 2226-2231 (2009).

H. Kumomi, S. Yaginuma, H. Omura, A. Goyal, A. Sato, M. Watanabe, M. Shimada, N. Kaji, K. Takahashi, M. Ofuji, T. Watanabe, N. Itagaki, H. Shimizu, K. Abe, Y. Tateishi, H. Yabuta, T. Iwasaki, R. Hayashi, T. Aiba, M. Sano, "Materials, devices, and circuits of transparent amorphous-oxide semiconductor," J. Display Technol. 5, 531-540 (2009).

2008

P. Barquinha, A. Vilà, G. Gonçalves, L. Pereira, R. Martins, J. Morante, E. Fortunato, "Gallium-indium-zinc-oxide based thin-film transistors: Influence of the source/drain material," IEEE Trans. Electron Devices 55, 954-960 (2008).

E. Fortunato, P. Barquinha, G. Gonçalves, L. Pereira, R. Martins, "High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors," Solid-State Electron. 52, 443-448 (2008).

2007

Y. Sun, J. A. Rogers, "Inorganic semiconductors for flexible electronics," Adv. Mater. 19, 1897-1916 (2007).

Y. Vygraneko, K. Wang, A. Nathan, "Stable indium oxide thin-film transistors with fast threshold voltage recovery," Appl. Phys. Lett. 91, 263-508 (2007).

2005

B. Sun, H. Sirringhaus, "Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods," Nano Lett. 5, 2408-2413 (2005).

E. M. C. Fortunato, P. M. C. Barquinha, A. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, R. F. P. Martins, "Fully transparent ZnO thin-film transistor produced at room temperature," Adv. Mater. 17, 590-594 (2005).

Adv. Mater.

E. M. C. Fortunato, P. M. C. Barquinha, A. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, R. F. P. Martins, "Fully transparent ZnO thin-film transistor produced at room temperature," Adv. Mater. 17, 590-594 (2005).

Adv. Mater.

R. A. Street, "Thin-film transistors," Adv. Mater. 21, 2007-2022 (2009).

Y. Sun, J. A. Rogers, "Inorganic semiconductors for flexible electronics," Adv. Mater. 19, 1897-1916 (2007).

A. Bashir, P. H. Wöbkenberg, J. Smith, J. M. Ball, G. Adamopoulos, D. D. C. Bradley, T. D. Anthopoulos, "High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere," Adv. Mater. 21, 2226-2231 (2009).

Appl. Phys. Lett.

Y. Vygraneko, K. Wang, A. Nathan, "Stable indium oxide thin-film transistors with fast threshold voltage recovery," Appl. Phys. Lett. 91, 263-508 (2007).

Chem. Rev.

A. C. Arias, J. D. MacKenzie, I. McCulloch, J. Rivnay, A. Salleo, "Materials and applications for large area electronics: Solution-based approaches," Chem. Rev. 110, 3-24 (2010).

Electrochem. Solid-State Lett.

Y. H. Hwang, J. H. Jeon, S.-J. Seo, B.-S. Bae, "Solution-processed, high-performance aluminum indium oxide thin-film transistors fabricated at low temperature," Electrochem. Solid-State Lett. 12, H336-H339 (2009).

IEEE Trans. Device Mater. Rel.

J. F. Conley, "Instabilities in amorphous oxide semiconductor thin film transistors," IEEE Trans. Device Mater. Rel. 10, 460-475 (2010).

IEEE Trans. Electron Devices

P. Barquinha, A. Vilà, G. Gonçalves, L. Pereira, R. Martins, J. Morante, E. Fortunato, "Gallium-indium-zinc-oxide based thin-film transistors: Influence of the source/drain material," IEEE Trans. Electron Devices 55, 954-960 (2008).

M. J. Seok, M. H. Choi, M. Mativenga, D. Geng, D. Y. Kim, J. Jang, "A full-swing a-IGZO TFT-based inverter with a top-gate-bias-induced depletion load," IEEE Trans. Electron Devices 32, 1089-1091 (2011).

J. Phys. D, Appl. Phys.

S. J. Seo, C. G. Choi, Y. H. Hwang, B. S. Bae, "High performance solution-processed amorphous zinc tin oxide thin film transistor," J. Phys. D, Appl. Phys. 42, 035-106 (2009).

J. Display Technol.

J. Mater. Chem.

C. Avis, J. Jang, "High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol-gel method," J. Mater. Chem. 21, 10649-10652 (2011).

Nano Lett.

B. Sun, H. Sirringhaus, "Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods," Nano Lett. 5, 2408-2413 (2005).

Nature Mater.

K. K. Banger, "Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol-gel on chip’ process," Nature Mater. 10, 45-50 (2011).

NPG Asia Mater.

Y. H. Hwang, J.-S. Seo, J. M. Yun, H. Park, S. Yang, S.-H. K. Park, B.-S. Bae, "An ‘aqueous route’ for low temperature processable oxide flexible transparent thin-film transistors on a plastic substrate," NPG Asia Mater. .

T. Kamiya, H. Hosono, "Material characteristics and applications of transparent amorphous oxide semiconductors," NPG Asia Mater. 2, 15-22 (2010).

Sci. Technol. Adv. Mater.

G. O. T. Kamiya, K. Nomura, H. Hosono, "Present status of amorphous In–Ga–Zn–O thin-film transistors," Sci. Technol. Adv. Mater. 11, 1-23 (2010).

Semicond. Sci. Technol.

J. K. Jeong, "The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays," Semicond. Sci. Technol. 26, 034008 (2011).

Solid-State Electron.

E. Fortunato, P. Barquinha, G. Gonçalves, L. Pereira, R. Martins, "High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors," Solid-State Electron. 52, 443-448 (2008).

Other

C. D. Wagner, W. M. Riggs, L. E. Davis, J. F. Moulder, G. E. Mullenberg, Handbook of X-Ray Photoelectron Spectroscopy: A Reference Book of Standard Data for Use in X-Ray Photoelectron Spectroscopy. (Perkin-Elmer, 1979).

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