Abstract

We report the post-annealing effect on the performance of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with self-aligned coplanar structure. The a-IZGO layer was passivated with ${{SiO}}_{2}$ or ${{SiN}}_{x}$ by plasma enhanced chemical vapor deposition (PECVD). The field-effect mobility of a-IGZO TFT with ${{SiN}}_{x}$ is almost unchanged by extending the post-annealing time at 250 $^{\circ}{{C}}$, but that of ${{SiO}}_{2}$ passivated TFT significantly degrades by increasing annealing time. It is found that the resistivity of the a-IGZO under ${{SiN}}_{x}$ is low enough and thus can be good conduction path, leading to the high performance TFT. It is also found that the interface trap density $(N_{it})$ between a-IGZO TFT with ${{SiN}}_{x}$ passivation decreases from ${{3.0}}\times {{10}}^{11}$ to $1.54\times 10^{11}\ {{cm}}^{-2}\ {{eV}}^{-1}$, and the stability of the a-IGZO TFT with ${{SiN}}_{x}$ passivation is significantly improved by long post-annealing.

© 2013 IEEE

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  1. Y. G. Mo, M. Kim, C. K. Kang, J. H. Jeong, Y. S. Park, C. G. Choi, H. D. Kim, S. S. Kim, "Amorphous oxide TFT backplane for large size AMOLED TVs," SID Tech. Dig (2010) pp. 1037-1040.
  2. J. H. Lee, D. H. Kim, D. J. Yang, S. Y. Hong, K. S. Yoon, P. S. Hong, C. O. Jeong, H. S. Park, S. Y. Kim, S. K. Lim, S. S. Kim, K. S. Son, T. S. Kim, J. Y. Kwon, S. Y. Lee, "World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT," SID Tech. Dig. (2008) pp. 625-628.
  3. J. S. Park, T. W. Kim, D. Stryakhilev, J. S. Lee, S. G. An, Y. S. Pyo, D. B. Lee, Y. G. Mo, D. U. Jin, H. K. Chung, "Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors," Appl. Phys. Lett. 95, 013503 (2009).
  4. M. J. Seok, M. H. Choi, M. Mativenga, D. Geng, D. Y. Kim, J. Jang, "A full-swing a-IGZO TFTs based inverter with a top-gate-bias-induced depletion load," IEEE Electron Devices Lett. 32, 1089-1091 (2011).
  5. H. Jeong, M. Mativenga, J. Jang, S. G. Lee, Y. M. Ha, "Design of a low power consumption a-IGZO TFT-based Vcom driver circuit with long-term reliability," SID Tech. Dig. (2011) pp. 338-341.
  6. H. W. Zan, C. H. Li, C. C. Yeh, M. Z. Dai, H. F. Meng, C. C. Tsai, "Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors," Appl. Phys. Lett. 98, 253503 (2011).
  7. D. Geng, D. H. Kang, J. Jang, "High performance amorphous indium-gallium-zinc-oxide thin-film transistor with self-aligned etch-stopper patterned by backside UV exposure," IEEE Electron Device Lett. 32, 758-760 (2011).
  8. M. Mativenga, M. H. Choi, D. H. Kang, J. Jang, "High-performance drain-offset a-IGZO thin-film transistors," IEEE Electron Devices Lett. 32, 644-646 (2011).
  9. S. W. Kim, J. C. Park, C. J. Kim, I. H. Song, S. I. Kim, S. H. Park, H. Yin, H. I. Lee, E. H. Lee, Y. Park, "Source/drain formation of self-aligned top-gate amorphous GaInZnO thin-film transistors by ${\hbox{NH}}_{3}$ plasma treatment," IEEE Electron Device Lett. 30, 374-376 (2009).
  10. N. Morosawa, Y. Ohshima, M. Morooka, T. Arai, T. Sasaoka, "A novel self-aligned top-gate oxide TFT for AM-OLED displays," SID Tech. Dig. (2011) pp. 479-483.
  11. D. H. Kang, I. Kang, S. H. Ryu, J. Jang, "Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits," IEEE Electron Device Lett. 32, 1385-1387 (2011).
  12. M. K. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, "High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper," Appl. Phys. Lett. 90, 212114 (2007).
  13. A. Sato, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, H. Hosono, "Amorphous In—Ga—Zn—O coplanar homojunction thin-film transistor," Appl. Phys. Lett. 94, 133502 (2009).
  14. J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, S. I. Kim, "Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment," Appl. Phys. Lett. 90, 262106 (2007).
  15. J. I. Kim, K. H. Ji, H. Y. Jung, S. Y. Park, R. N. Choi, M. Jang, H. C. Yang, D. H. Kim, J. U. Bae, C. D. Kim, J. K. Jeong, "Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface," Appl. Phys. Lett. 99, 122102 (2011).
  16. S. E. Liu, M. J. Yu, C. Y. Lin, G. T. Ho, C. C. Cheng, C. M. Lai, C. J. Lin, Y. C. King, Y. H. Yeh, "Influence of passivation layers on characteristics of a-InGaZnO thin-film transistors," IEEE Electron Device Lett. 32, 161-163 (2011).
  17. Y. K. Moon, S. Lee, W. S. Kim, B. W. Kang, C. O. Jeong, D. H. Lee, J. W. Park, "Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an ${\hbox{O}}_{2}$ plasma-treated insulator," Appl. Phys. Lett. 95, 013507 (2009).
  18. W. T. Chen, S. Y. Lo, S. C. Kao, H. W. Zan, C. C. Tsai, J. H. Lin, C. H. Fang, C. C. Lee, "Oxygen-dependent instability and annealing/passivation effects in amorphous In–Ga–Zn–O thin-film transistors," IEEE Electron Device Lett. 32, 1552-1554 (2011).
  19. M. D. H. Chowdhury, S. H. Ryu, P. Migliorato, J. Jang, "Effect of annealing time on bias stress and light-induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors," J. Appl. Phys. 110, 114503 (2011).
  20. M. Mativenga, M. H. Choi, J. W. Choi, J. Jang, "Transparent flexible circuits based on amorphous-indium–gallium–zinc–oxide thin-film transistors," IEEE Electron Device Lett. 32, 170-172 (2011).

2011 (10)

M. J. Seok, M. H. Choi, M. Mativenga, D. Geng, D. Y. Kim, J. Jang, "A full-swing a-IGZO TFTs based inverter with a top-gate-bias-induced depletion load," IEEE Electron Devices Lett. 32, 1089-1091 (2011).

H. W. Zan, C. H. Li, C. C. Yeh, M. Z. Dai, H. F. Meng, C. C. Tsai, "Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors," Appl. Phys. Lett. 98, 253503 (2011).

D. Geng, D. H. Kang, J. Jang, "High performance amorphous indium-gallium-zinc-oxide thin-film transistor with self-aligned etch-stopper patterned by backside UV exposure," IEEE Electron Device Lett. 32, 758-760 (2011).

M. Mativenga, M. H. Choi, D. H. Kang, J. Jang, "High-performance drain-offset a-IGZO thin-film transistors," IEEE Electron Devices Lett. 32, 644-646 (2011).

D. H. Kang, I. Kang, S. H. Ryu, J. Jang, "Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits," IEEE Electron Device Lett. 32, 1385-1387 (2011).

J. I. Kim, K. H. Ji, H. Y. Jung, S. Y. Park, R. N. Choi, M. Jang, H. C. Yang, D. H. Kim, J. U. Bae, C. D. Kim, J. K. Jeong, "Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface," Appl. Phys. Lett. 99, 122102 (2011).

S. E. Liu, M. J. Yu, C. Y. Lin, G. T. Ho, C. C. Cheng, C. M. Lai, C. J. Lin, Y. C. King, Y. H. Yeh, "Influence of passivation layers on characteristics of a-InGaZnO thin-film transistors," IEEE Electron Device Lett. 32, 161-163 (2011).

W. T. Chen, S. Y. Lo, S. C. Kao, H. W. Zan, C. C. Tsai, J. H. Lin, C. H. Fang, C. C. Lee, "Oxygen-dependent instability and annealing/passivation effects in amorphous In–Ga–Zn–O thin-film transistors," IEEE Electron Device Lett. 32, 1552-1554 (2011).

M. D. H. Chowdhury, S. H. Ryu, P. Migliorato, J. Jang, "Effect of annealing time on bias stress and light-induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors," J. Appl. Phys. 110, 114503 (2011).

M. Mativenga, M. H. Choi, J. W. Choi, J. Jang, "Transparent flexible circuits based on amorphous-indium–gallium–zinc–oxide thin-film transistors," IEEE Electron Device Lett. 32, 170-172 (2011).

2009 (4)

Y. K. Moon, S. Lee, W. S. Kim, B. W. Kang, C. O. Jeong, D. H. Lee, J. W. Park, "Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an ${\hbox{O}}_{2}$ plasma-treated insulator," Appl. Phys. Lett. 95, 013507 (2009).

J. S. Park, T. W. Kim, D. Stryakhilev, J. S. Lee, S. G. An, Y. S. Pyo, D. B. Lee, Y. G. Mo, D. U. Jin, H. K. Chung, "Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors," Appl. Phys. Lett. 95, 013503 (2009).

A. Sato, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, H. Hosono, "Amorphous In—Ga—Zn—O coplanar homojunction thin-film transistor," Appl. Phys. Lett. 94, 133502 (2009).

S. W. Kim, J. C. Park, C. J. Kim, I. H. Song, S. I. Kim, S. H. Park, H. Yin, H. I. Lee, E. H. Lee, Y. Park, "Source/drain formation of self-aligned top-gate amorphous GaInZnO thin-film transistors by ${\hbox{NH}}_{3}$ plasma treatment," IEEE Electron Device Lett. 30, 374-376 (2009).

2007 (2)

J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, S. I. Kim, "Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment," Appl. Phys. Lett. 90, 262106 (2007).

M. K. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, "High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper," Appl. Phys. Lett. 90, 212114 (2007).

Appl. Phys. Lett. (2)

M. K. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, "High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper," Appl. Phys. Lett. 90, 212114 (2007).

A. Sato, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, H. Hosono, "Amorphous In—Ga—Zn—O coplanar homojunction thin-film transistor," Appl. Phys. Lett. 94, 133502 (2009).

Appl. Phys. Lett. (5)

J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, S. I. Kim, "Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment," Appl. Phys. Lett. 90, 262106 (2007).

J. I. Kim, K. H. Ji, H. Y. Jung, S. Y. Park, R. N. Choi, M. Jang, H. C. Yang, D. H. Kim, J. U. Bae, C. D. Kim, J. K. Jeong, "Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface," Appl. Phys. Lett. 99, 122102 (2011).

Y. K. Moon, S. Lee, W. S. Kim, B. W. Kang, C. O. Jeong, D. H. Lee, J. W. Park, "Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an ${\hbox{O}}_{2}$ plasma-treated insulator," Appl. Phys. Lett. 95, 013507 (2009).

J. S. Park, T. W. Kim, D. Stryakhilev, J. S. Lee, S. G. An, Y. S. Pyo, D. B. Lee, Y. G. Mo, D. U. Jin, H. K. Chung, "Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors," Appl. Phys. Lett. 95, 013503 (2009).

H. W. Zan, C. H. Li, C. C. Yeh, M. Z. Dai, H. F. Meng, C. C. Tsai, "Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors," Appl. Phys. Lett. 98, 253503 (2011).

IEEE Electron Device Lett. (1)

S. W. Kim, J. C. Park, C. J. Kim, I. H. Song, S. I. Kim, S. H. Park, H. Yin, H. I. Lee, E. H. Lee, Y. Park, "Source/drain formation of self-aligned top-gate amorphous GaInZnO thin-film transistors by ${\hbox{NH}}_{3}$ plasma treatment," IEEE Electron Device Lett. 30, 374-376 (2009).

IEEE Electron Device Lett. (2)

M. Mativenga, M. H. Choi, J. W. Choi, J. Jang, "Transparent flexible circuits based on amorphous-indium–gallium–zinc–oxide thin-film transistors," IEEE Electron Device Lett. 32, 170-172 (2011).

S. E. Liu, M. J. Yu, C. Y. Lin, G. T. Ho, C. C. Cheng, C. M. Lai, C. J. Lin, Y. C. King, Y. H. Yeh, "Influence of passivation layers on characteristics of a-InGaZnO thin-film transistors," IEEE Electron Device Lett. 32, 161-163 (2011).

IEEE Electron Device Lett. (3)

D. H. Kang, I. Kang, S. H. Ryu, J. Jang, "Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits," IEEE Electron Device Lett. 32, 1385-1387 (2011).

W. T. Chen, S. Y. Lo, S. C. Kao, H. W. Zan, C. C. Tsai, J. H. Lin, C. H. Fang, C. C. Lee, "Oxygen-dependent instability and annealing/passivation effects in amorphous In–Ga–Zn–O thin-film transistors," IEEE Electron Device Lett. 32, 1552-1554 (2011).

D. Geng, D. H. Kang, J. Jang, "High performance amorphous indium-gallium-zinc-oxide thin-film transistor with self-aligned etch-stopper patterned by backside UV exposure," IEEE Electron Device Lett. 32, 758-760 (2011).

IEEE Electron Devices Lett. (2)

M. Mativenga, M. H. Choi, D. H. Kang, J. Jang, "High-performance drain-offset a-IGZO thin-film transistors," IEEE Electron Devices Lett. 32, 644-646 (2011).

M. J. Seok, M. H. Choi, M. Mativenga, D. Geng, D. Y. Kim, J. Jang, "A full-swing a-IGZO TFTs based inverter with a top-gate-bias-induced depletion load," IEEE Electron Devices Lett. 32, 1089-1091 (2011).

J. Appl. Phys. (1)

M. D. H. Chowdhury, S. H. Ryu, P. Migliorato, J. Jang, "Effect of annealing time on bias stress and light-induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors," J. Appl. Phys. 110, 114503 (2011).

Other (4)

H. Jeong, M. Mativenga, J. Jang, S. G. Lee, Y. M. Ha, "Design of a low power consumption a-IGZO TFT-based Vcom driver circuit with long-term reliability," SID Tech. Dig. (2011) pp. 338-341.

Y. G. Mo, M. Kim, C. K. Kang, J. H. Jeong, Y. S. Park, C. G. Choi, H. D. Kim, S. S. Kim, "Amorphous oxide TFT backplane for large size AMOLED TVs," SID Tech. Dig (2010) pp. 1037-1040.

J. H. Lee, D. H. Kim, D. J. Yang, S. Y. Hong, K. S. Yoon, P. S. Hong, C. O. Jeong, H. S. Park, S. Y. Kim, S. K. Lim, S. S. Kim, K. S. Son, T. S. Kim, J. Y. Kwon, S. Y. Lee, "World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT," SID Tech. Dig. (2008) pp. 625-628.

N. Morosawa, Y. Ohshima, M. Morooka, T. Arai, T. Sasaoka, "A novel self-aligned top-gate oxide TFT for AM-OLED displays," SID Tech. Dig. (2011) pp. 479-483.

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