Abstract

We report the post-annealing effect on the performance of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with self-aligned coplanar structure. The a-IZGO layer was passivated with ${{SiO}}_{2}$ or ${{SiN}}_{x}$ by plasma enhanced chemical vapor deposition (PECVD). The field-effect mobility of a-IGZO TFT with ${{SiN}}_{x}$ is almost unchanged by extending the post-annealing time at 250 $^{\circ}{{C}}$, but that of ${{SiO}}_{2}$ passivated TFT significantly degrades by increasing annealing time. It is found that the resistivity of the a-IGZO under ${{SiN}}_{x}$ is low enough and thus can be good conduction path, leading to the high performance TFT. It is also found that the interface trap density $(N_{it})$ between a-IGZO TFT with ${{SiN}}_{x}$ passivation decreases from ${{3.0}}\times {{10}}^{11}$ to $1.54\times 10^{11}\ {{cm}}^{-2}\ {{eV}}^{-1}$, and the stability of the a-IGZO TFT with ${{SiN}}_{x}$ passivation is significantly improved by long post-annealing.

© 2013 IEEE

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