Abstract

Light-emitting diodes (LEDs) are the major backlighting source used in liquid crystal displays and dimming the LEDs is a common approach to increase the contrast ratio or save power. Pulse-width modulation (PWM) is more popular than analog methods of dimming, because it produces a less pronounced shift in chromaticity. However, in PWM dimming mode, overcurrent can shorten the lifespan of the LEDs. This paper proposes a technique to overcome the drawbacks inherent in conventional approaches to the suppression of overcurrent in LED devices. The design was implemented using the TSMC 0.25-<i>µ</i>m 60-V bipolar-CMOS-DMOS process, resulting in a chip area of 2.2 mm<sup>2</sup>. A comparison with two commercial chips demonstrates the effectiveness of the proposed design in the suppression of LED overcurrent and the subsequent extension of the lifespan.

© 2013 IEEE

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  1. H.-J. Chiu, Y.-K. Lo, J.-T. Chen, S.-J. Cheng, C.-Y. Lin, S.-H. Mou, "A high-efficiency dimming LED driver for low-power lighting applications," IEEE Trans. Ind. Electron. 57, 735-743 (2010).
  2. H.-J. Chiu, Y.-K. Lo, T.-P. Lee, S.-C. Mou, M.-M. Huang, "Design of an RGE LED backlight circuit for liquid crystal display panels," IEEE Trans. Ind. Electron. 56, 2793-2795 (2009).
  3. W.-S. Oh, D. Cho, K.-M. Cho, G.-W. Moon, B. Yang, T. Jang, "A novel two-dimensional adaptive dimming technique of x-y channel drivers for LED backlight system in LCD TVs," J. Display Technol. 5, 20-26 (2009).
  4. Y.-T. Hsieh, B.-D. Liu, J.-F. Wu, C.-L. Fang, H.-H. Tsai, Y.-Z. Juang, "A high-dimming-ratio LED driver for LCD backlights," IEEE Trans. Power Electron. 27, 4562-4570 (2012).
  5. R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol. 27, 024001-1-024001-14 (2012).
  6. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Expr. 19, A991-A1007 (2011).
  7. H. Zhao, J. Zhang, G. Liu, N. Tansu, "Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes," Appl. Phys. Lett. 98, 151115-1-151115-3 (2011).
  8. G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, N. Tansu, "Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography," Nanoscale Res. Lett. 6, 1-10 (2011).
  9. H. Zhao, G. Liu, R. A. Arif, N. Tansu, "Current injection efficiency quenching leading to efficiency droop in InGaN quantum well light-emitting diodes," Solid State Electron. 54, 1119-1124 (2010).
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  11. Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nano-patterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Select. Topics Quantum Electron. 15, 1066-1072 (2009).
  12. Y.-K. Ee, X.-H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire," J. Crys. Growth 312, 1311-1315 (2010).
  13. Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, C. Wetzel, "Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire," Appl. Phys. Lett. 98, 151102-1-151102-3 (2011).
  14. X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, N. Tansu, "Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios," IEEE Photon. J. 3, 489-499 (2011).
  15. Y.-K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, N. Tansu, "Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures," Opt. Expr. 17, 13747-13757 (2009).
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  17. A. Sztein1, H. Ohta1, J. Sonoda1, A. Ramu, J. E. Bowers, S. P. DenBaars, S. Nakamura1, "GaN-based integrated lateral thermoelectric device for micro-power generation," Appl. Phys. Exp. 2, 111003-1-111003-3 (2009).
  18. H. Tong, J. Zhang, G. Liu, J. A. Herbsommer, G. S. Huang, N. Tansu, "Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition," Appl. Phys. Lett. 97, 112105-1-112105-3 (2010).
  19. J. Zhang, H. Tong, G. Liu, J. A. Herbsommer, G. S. Huang, N. Tansu, "Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents," J. Appl. Phys. 109, 053706-1-053706-6 (2011).
  20. J. Zhang, S. Kutlu, G. Liu, N. Tansu, "High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy," J. Appl. Phys. 110, 043710-1-043710-6 (2011).
  21. B. N. Pantha, I.-W. Feng, K. Aryal, J. Li, J.-Y. Lin, H.-X. Jiang, "Erbium-doped AlInGaN alloys as high-temperature thermoelectric materials," Appl. Phys. Exp. 4, 051001-1-051001-3 (2011).
  22. Cree, Inc.“Pulsed over-current driving of XLamp LEDs: Information and cautions” Appl. Note http://www.cree.com/products/pdf/XLamp-Pulsed-Current.pdf.
  23. Cree, Inc.“XLamp electrical overstress,” Appl. Note http://www.cree.com/products/pdf/XLamp_Elec_Overstress.pdf.
  24. Texas Instruments Incorporated“High voltage DC/DC boost converter with 0.5-A/1.3-A integrated switch,” Datasheet: TPS61081 http://www.ti.com/lit/gpn/tps61081.
  25. Monolithic Power System, Inc.“1.3 A fixed frequency white LED driver,” Datasheet: MP3202 http://space.ednchina.com/ewebeditor/uploadfile/20110705085426780.pdf.
  26. L. Corradini, A. Babazadeh, A. Bjeleti?, D. Maksimovi?, "Current-limited time-optimal response in digitally controlled DC-DC converters," IEEE Trans. Power Electron. 25, 2869-2880 (2010).
  27. K. Z. Ahmed, M. S. Islam, S. M. K. Bari, M. R. R. Mazumder, A. B. M. H.-U. Rashid, "Design of a linearly increasing inrush current limit circuit for DC-DC boost regulators," Proc. IEEE APCCAS (2010) pp. 863-866.

2012 (3)

Y.-T. Hsieh, B.-D. Liu, J.-F. Wu, C.-L. Fang, H.-H. Tsai, Y.-Z. Juang, "A high-dimming-ratio LED driver for LCD backlights," IEEE Trans. Power Electron. 27, 4562-4570 (2012).

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol. 27, 024001-1-024001-14 (2012).

I. E. Titkov, D. A. Sannikov, Y.-M. Park, J.-K. Son, "Blue light emitting diode internal and injection efficiency," AIP Advance (2) 2, 032117-1-032117-4 (2012).

2011 (9)

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Expr. 19, A991-A1007 (2011).

H. Zhao, J. Zhang, G. Liu, N. Tansu, "Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes," Appl. Phys. Lett. 98, 151115-1-151115-3 (2011).

G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, N. Tansu, "Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography," Nanoscale Res. Lett. 6, 1-10 (2011).

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, C. Wetzel, "Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire," Appl. Phys. Lett. 98, 151102-1-151102-3 (2011).

X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, N. Tansu, "Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios," IEEE Photon. J. 3, 489-499 (2011).

E. Rangel, E. Matioli, Y.-S. Choi, C. Weisbuch, J. S. Speck, E. L. Hu, "Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes," Appl. Phys. Lett. 98, 081104-1-081104-3 (2011).

J. Zhang, H. Tong, G. Liu, J. A. Herbsommer, G. S. Huang, N. Tansu, "Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents," J. Appl. Phys. 109, 053706-1-053706-6 (2011).

J. Zhang, S. Kutlu, G. Liu, N. Tansu, "High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy," J. Appl. Phys. 110, 043710-1-043710-6 (2011).

B. N. Pantha, I.-W. Feng, K. Aryal, J. Li, J.-Y. Lin, H.-X. Jiang, "Erbium-doped AlInGaN alloys as high-temperature thermoelectric materials," Appl. Phys. Exp. 4, 051001-1-051001-3 (2011).

2010 (5)

L. Corradini, A. Babazadeh, A. Bjeleti?, D. Maksimovi?, "Current-limited time-optimal response in digitally controlled DC-DC converters," IEEE Trans. Power Electron. 25, 2869-2880 (2010).

H. Zhao, G. Liu, R. A. Arif, N. Tansu, "Current injection efficiency quenching leading to efficiency droop in InGaN quantum well light-emitting diodes," Solid State Electron. 54, 1119-1124 (2010).

H.-J. Chiu, Y.-K. Lo, J.-T. Chen, S.-J. Cheng, C.-Y. Lin, S.-H. Mou, "A high-efficiency dimming LED driver for low-power lighting applications," IEEE Trans. Ind. Electron. 57, 735-743 (2010).

Y.-K. Ee, X.-H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire," J. Crys. Growth 312, 1311-1315 (2010).

H. Tong, J. Zhang, G. Liu, J. A. Herbsommer, G. S. Huang, N. Tansu, "Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition," Appl. Phys. Lett. 97, 112105-1-112105-3 (2010).

2009 (5)

H.-J. Chiu, Y.-K. Lo, T.-P. Lee, S.-C. Mou, M.-M. Huang, "Design of an RGE LED backlight circuit for liquid crystal display panels," IEEE Trans. Ind. Electron. 56, 2793-2795 (2009).

W.-S. Oh, D. Cho, K.-M. Cho, G.-W. Moon, B. Yang, T. Jang, "A novel two-dimensional adaptive dimming technique of x-y channel drivers for LED backlight system in LCD TVs," J. Display Technol. 5, 20-26 (2009).

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nano-patterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Select. Topics Quantum Electron. 15, 1066-1072 (2009).

A. Sztein1, H. Ohta1, J. Sonoda1, A. Ramu, J. E. Bowers, S. P. DenBaars, S. Nakamura1, "GaN-based integrated lateral thermoelectric device for micro-power generation," Appl. Phys. Exp. 2, 111003-1-111003-3 (2009).

Y.-K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, N. Tansu, "Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures," Opt. Expr. 17, 13747-13757 (2009).

AIP Advance (2) (1)

I. E. Titkov, D. A. Sannikov, Y.-M. Park, J.-K. Son, "Blue light emitting diode internal and injection efficiency," AIP Advance (2) 2, 032117-1-032117-4 (2012).

Appl. Phys. Lett. (2)

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, C. Wetzel, "Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire," Appl. Phys. Lett. 98, 151102-1-151102-3 (2011).

H. Tong, J. Zhang, G. Liu, J. A. Herbsommer, G. S. Huang, N. Tansu, "Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition," Appl. Phys. Lett. 97, 112105-1-112105-3 (2010).

Appl. Phys. Exp. (2)

A. Sztein1, H. Ohta1, J. Sonoda1, A. Ramu, J. E. Bowers, S. P. DenBaars, S. Nakamura1, "GaN-based integrated lateral thermoelectric device for micro-power generation," Appl. Phys. Exp. 2, 111003-1-111003-3 (2009).

B. N. Pantha, I.-W. Feng, K. Aryal, J. Li, J.-Y. Lin, H.-X. Jiang, "Erbium-doped AlInGaN alloys as high-temperature thermoelectric materials," Appl. Phys. Exp. 4, 051001-1-051001-3 (2011).

Appl. Phys. Lett. (2)

E. Rangel, E. Matioli, Y.-S. Choi, C. Weisbuch, J. S. Speck, E. L. Hu, "Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes," Appl. Phys. Lett. 98, 081104-1-081104-3 (2011).

H. Zhao, J. Zhang, G. Liu, N. Tansu, "Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes," Appl. Phys. Lett. 98, 151115-1-151115-3 (2011).

IEEE Trans. Power Electron. (1)

L. Corradini, A. Babazadeh, A. Bjeleti?, D. Maksimovi?, "Current-limited time-optimal response in digitally controlled DC-DC converters," IEEE Trans. Power Electron. 25, 2869-2880 (2010).

IEEE J. Select. Topics Quantum Electron. (1)

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nano-patterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Select. Topics Quantum Electron. 15, 1066-1072 (2009).

IEEE Photon. J. (1)

X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, N. Tansu, "Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios," IEEE Photon. J. 3, 489-499 (2011).

IEEE Trans. Ind. Electron. (2)

H.-J. Chiu, Y.-K. Lo, J.-T. Chen, S.-J. Cheng, C.-Y. Lin, S.-H. Mou, "A high-efficiency dimming LED driver for low-power lighting applications," IEEE Trans. Ind. Electron. 57, 735-743 (2010).

H.-J. Chiu, Y.-K. Lo, T.-P. Lee, S.-C. Mou, M.-M. Huang, "Design of an RGE LED backlight circuit for liquid crystal display panels," IEEE Trans. Ind. Electron. 56, 2793-2795 (2009).

IEEE Trans. Power Electron. (1)

Y.-T. Hsieh, B.-D. Liu, J.-F. Wu, C.-L. Fang, H.-H. Tsai, Y.-Z. Juang, "A high-dimming-ratio LED driver for LCD backlights," IEEE Trans. Power Electron. 27, 4562-4570 (2012).

J. Display Technol. (1)

W.-S. Oh, D. Cho, K.-M. Cho, G.-W. Moon, B. Yang, T. Jang, "A novel two-dimensional adaptive dimming technique of x-y channel drivers for LED backlight system in LCD TVs," J. Display Technol. 5, 20-26 (2009).

J. Appl. Phys. (2)

J. Zhang, H. Tong, G. Liu, J. A. Herbsommer, G. S. Huang, N. Tansu, "Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents," J. Appl. Phys. 109, 053706-1-053706-6 (2011).

J. Zhang, S. Kutlu, G. Liu, N. Tansu, "High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy," J. Appl. Phys. 110, 043710-1-043710-6 (2011).

J. Crys. Growth (1)

Y.-K. Ee, X.-H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire," J. Crys. Growth 312, 1311-1315 (2010).

Nanoscale Res. Lett. (1)

G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, N. Tansu, "Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography," Nanoscale Res. Lett. 6, 1-10 (2011).

Opt. Expr. (2)

Y.-K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, N. Tansu, "Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures," Opt. Expr. 17, 13747-13757 (2009).

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Expr. 19, A991-A1007 (2011).

Semicond. Sci. Technol. (1)

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol. 27, 024001-1-024001-14 (2012).

Solid State Electron. (1)

H. Zhao, G. Liu, R. A. Arif, N. Tansu, "Current injection efficiency quenching leading to efficiency droop in InGaN quantum well light-emitting diodes," Solid State Electron. 54, 1119-1124 (2010).

Other (5)

Cree, Inc.“Pulsed over-current driving of XLamp LEDs: Information and cautions” Appl. Note http://www.cree.com/products/pdf/XLamp-Pulsed-Current.pdf.

Cree, Inc.“XLamp electrical overstress,” Appl. Note http://www.cree.com/products/pdf/XLamp_Elec_Overstress.pdf.

Texas Instruments Incorporated“High voltage DC/DC boost converter with 0.5-A/1.3-A integrated switch,” Datasheet: TPS61081 http://www.ti.com/lit/gpn/tps61081.

Monolithic Power System, Inc.“1.3 A fixed frequency white LED driver,” Datasheet: MP3202 http://space.ednchina.com/ewebeditor/uploadfile/20110705085426780.pdf.

K. Z. Ahmed, M. S. Islam, S. M. K. Bari, M. R. R. Mazumder, A. B. M. H.-U. Rashid, "Design of a linearly increasing inrush current limit circuit for DC-DC boost regulators," Proc. IEEE APCCAS (2010) pp. 863-866.

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