Abstract

This paper proposes a highly power-efficient light-emitting diode (LED) back-light power supply for liquid crystal display (LCD). The proposed converter integrates the power factor correction (PFC) circuit with the dc–dc converter. It provides an isolated dc voltage without using any full-bridge diode rectifier. Conduction losses are reduced by eliminating the full-bridge diode rectifier. Switching power losses are also reduced by achieving zero-voltage switching (ZVS) operation of power switches. By reducing power losses, the power efficiency of the LED back-light power supply can be improved. The experimental results are presented to verify the feasibility of the proposed converter for a 100 W LED back-light power.

© 2013 IEEE

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  1. D. Y. Cho, W. S. Oh, G. W. Moon, "A novel adaptive dimming LED backlight system with current compensated X-Y channel drivers for LCD TVs," J. Display. Technol. 7, 29-35 (2011).
  2. S. J. Choi, T. H. Kim, "Symmetric current-balancing circuit for LED backlight with dimming," IEEE Trans. Ind. Electron. 59, 1698-1707 (2012).
  3. W. S. Oh, D. Y. Cho, K. M. Cho, G. W. Moon, B. C. Yang, T. S. Jang, "A novel two-dimensional adaptive dimming technique of X-Y channel drivers for LED backlight system in LCD TVs," J. Display. Technol. 5, 20-26 (2009).
  4. M. Arias, D. G. Lamar, F. F. Linera, D. Balocco, A. A. Diallo, J. Sebastian, "Design of a soft-switching asymmetrical half-bridge converter as second stage of an LED driver for street lighting application," IEEE Trans. Power Electron. 22, 1608-1621 (2012).
  5. C. C. Chen, C. Y. Wu, Y. M. Chen, T. F. Wu, "Sequential color LED backlight driving system for LCD panels," IEEE Trans. Power Electron. 22, 919-925 (2007).
  6. C. Y. Wu, T. F. Wu, J. R. Tsai, Y. M. Chen, C. C. Chen, "Multi-string LED backlight driving system for LCD panels with color sequential display and area control," IEEE Trans. Ind. Electron. 55, 3791-3800 (2008).
  7. H. J. Chiu, S. J. Cheng, "LED backlight driving system for large-scale LCD panels," IEEE Trans. Ind. Electron. 54, 2751-2760 (2007).
  8. Y. C. Li, C. L. Chen, "A novel single-stage high-power-factor ac-to-dc LED driving circuit with leakage inductance energy recycling," IEEE Trans. Ind. Electron. 59, 793-802 (2012).
  9. D. D. C. Lu, H. H. C. Iu, V. Pjevalica, "Single-stage ac/dc boost-forward converter with high power factor and regulated bus and output voltages," IEEE Trans. Ind. Electron. 56, 2128-2132 (2009).
  10. H. Ma, J. S. Lai, Q. Feng, W. Yu, C. Zheng, Z. Zhao, "A novel valley-fill SEPIC-derived power supply without electrolytic capacitors for LED lighting application," IEEE Trans. Power Electron. 27, 3057-3071 (2012).
  11. W. Y. Choi, J. M. Kwon, J. J. Lee, H. Y. Jang, B. H. Kwon, "Single-stage soft-switching converter with boost type of active clamp for wide input voltage ranges," IEEE Trans. Power Electron. 24, 730-741 (2009).
  12. R. M. Farrel, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Tech. 27, (2012).
  13. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting dioidoes with large overlap quantum wells," Opt. Express 19, A991-A1007 (2011).
  14. H. P. Zhao, G. Y. Liu, X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, N. Tansu, "Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime," IET Optoelectron. 3, 283-295 (2009).
  15. G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, N. Tansu, "Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography," Nanoscale Res. Lett. 6, (2011) Art. 342.
  16. Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Sel. Topics Quantum Electron. 15, 1066-1072 (2009).
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  18. Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, C. Wetzel, "Defect-reduced green GaInN/GaN light-emitting diode on nanopattern sapphire," Appl. Phys. Lett. 98, (2011) Art. 151102.
  19. H. Zhao, G. Liu, R. A. Arif, N. Tansu, "Current injection efficiency quenching leading to efficiency droop in InGaN quantum well light-emitting diodes," Solid-State Electron. 54, 1119-1124 (2010).
  20. I. E. Titkov, D. A. Sannikov, Y. M. Park, J. K. Son, "Blue light emitting diode internal and injection efficiency," AIP Advances 2, (2012) Art. 032117.
  21. Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, J. F. Gilchrist, "Enhancement of light extraction efficiency of InGaN quantum wells light emitting didoes using SiO2/Polystyrene microlens arrays," Appl. Phys. Lett. 91, (2007) Art. 221107.
  22. X. H. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, N. Tansu, "Light extraction efficiency and radiation patterns of III-Nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios," IEEE Photon. J. 3, 489-499 (2011).
  23. Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, N. Tansu, "Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures," Opt. Express 17, 13747-13757 (2009).
  24. A. Sztein, H. Ohta, J. Sonoda, A. Ramu, J. E. Bowers, S. P. DenBaars, S. Nakamura, "GaN-based integrated lateral thermoelectric device for micro-power generation," Appl. Phys. Exp. 2, (2009) Art. 111003.
  25. H. Tong, J. Zhang, G. Y. Liu, J. Herbsommer, G. S. Huang, N. Tansu, "Thermoelectric properties of lattice-matched AlInN alloy grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 97, (2010) Art. 112105.
  26. J. Zhang, H. Tong, G. Liu, J. A. Herbsommer, G. S. Huang, N. Tansu, "Characterizations of seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various in-contents," J. Appl. Phys. 109, (2011) Art. 053706.
  27. J. Zhang, S. Kutlu, G. Liu, N. Tansu, "High-temperature characteristics of seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy," J. Appl. Phys. 110, (2011) Art. 043710.
  28. B. N. Pantha, I. Feng, K. Aryal, J. Li, J. Y. Lin, H. X. Jiang, "Erbium-doped AllGaN alloys as high-temperature thermoelectric materials," Appl. Phys. Exp. 4, (2011) Art. 051001.

2012 (6)

S. J. Choi, T. H. Kim, "Symmetric current-balancing circuit for LED backlight with dimming," IEEE Trans. Ind. Electron. 59, 1698-1707 (2012).

M. Arias, D. G. Lamar, F. F. Linera, D. Balocco, A. A. Diallo, J. Sebastian, "Design of a soft-switching asymmetrical half-bridge converter as second stage of an LED driver for street lighting application," IEEE Trans. Power Electron. 22, 1608-1621 (2012).

Y. C. Li, C. L. Chen, "A novel single-stage high-power-factor ac-to-dc LED driving circuit with leakage inductance energy recycling," IEEE Trans. Ind. Electron. 59, 793-802 (2012).

H. Ma, J. S. Lai, Q. Feng, W. Yu, C. Zheng, Z. Zhao, "A novel valley-fill SEPIC-derived power supply without electrolytic capacitors for LED lighting application," IEEE Trans. Power Electron. 27, 3057-3071 (2012).

R. M. Farrel, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Tech. 27, (2012).

I. E. Titkov, D. A. Sannikov, Y. M. Park, J. K. Son, "Blue light emitting diode internal and injection efficiency," AIP Advances 2, (2012) Art. 032117.

2011 (8)

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, C. Wetzel, "Defect-reduced green GaInN/GaN light-emitting diode on nanopattern sapphire," Appl. Phys. Lett. 98, (2011) Art. 151102.

X. H. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, N. Tansu, "Light extraction efficiency and radiation patterns of III-Nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios," IEEE Photon. J. 3, 489-499 (2011).

J. Zhang, H. Tong, G. Liu, J. A. Herbsommer, G. S. Huang, N. Tansu, "Characterizations of seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various in-contents," J. Appl. Phys. 109, (2011) Art. 053706.

J. Zhang, S. Kutlu, G. Liu, N. Tansu, "High-temperature characteristics of seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy," J. Appl. Phys. 110, (2011) Art. 043710.

B. N. Pantha, I. Feng, K. Aryal, J. Li, J. Y. Lin, H. X. Jiang, "Erbium-doped AllGaN alloys as high-temperature thermoelectric materials," Appl. Phys. Exp. 4, (2011) Art. 051001.

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting dioidoes with large overlap quantum wells," Opt. Express 19, A991-A1007 (2011).

G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, N. Tansu, "Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography," Nanoscale Res. Lett. 6, (2011) Art. 342.

D. Y. Cho, W. S. Oh, G. W. Moon, "A novel adaptive dimming LED backlight system with current compensated X-Y channel drivers for LCD TVs," J. Display. Technol. 7, 29-35 (2011).

2010 (3)

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Abbreviated MOVPE nucleation of III-Nitride light-emitting diodes on nano-patterned sapphire," J. Cryst. Growth 312, 1311-1315 (2010).

H. Zhao, G. Liu, R. A. Arif, N. Tansu, "Current injection efficiency quenching leading to efficiency droop in InGaN quantum well light-emitting diodes," Solid-State Electron. 54, 1119-1124 (2010).

H. Tong, J. Zhang, G. Y. Liu, J. Herbsommer, G. S. Huang, N. Tansu, "Thermoelectric properties of lattice-matched AlInN alloy grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 97, (2010) Art. 112105.

2009 (7)

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, N. Tansu, "Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures," Opt. Express 17, 13747-13757 (2009).

A. Sztein, H. Ohta, J. Sonoda, A. Ramu, J. E. Bowers, S. P. DenBaars, S. Nakamura, "GaN-based integrated lateral thermoelectric device for micro-power generation," Appl. Phys. Exp. 2, (2009) Art. 111003.

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Sel. Topics Quantum Electron. 15, 1066-1072 (2009).

H. P. Zhao, G. Y. Liu, X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, N. Tansu, "Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime," IET Optoelectron. 3, 283-295 (2009).

W. Y. Choi, J. M. Kwon, J. J. Lee, H. Y. Jang, B. H. Kwon, "Single-stage soft-switching converter with boost type of active clamp for wide input voltage ranges," IEEE Trans. Power Electron. 24, 730-741 (2009).

D. D. C. Lu, H. H. C. Iu, V. Pjevalica, "Single-stage ac/dc boost-forward converter with high power factor and regulated bus and output voltages," IEEE Trans. Ind. Electron. 56, 2128-2132 (2009).

W. S. Oh, D. Y. Cho, K. M. Cho, G. W. Moon, B. C. Yang, T. S. Jang, "A novel two-dimensional adaptive dimming technique of X-Y channel drivers for LED backlight system in LCD TVs," J. Display. Technol. 5, 20-26 (2009).

2008 (1)

C. Y. Wu, T. F. Wu, J. R. Tsai, Y. M. Chen, C. C. Chen, "Multi-string LED backlight driving system for LCD panels with color sequential display and area control," IEEE Trans. Ind. Electron. 55, 3791-3800 (2008).

2007 (3)

H. J. Chiu, S. J. Cheng, "LED backlight driving system for large-scale LCD panels," IEEE Trans. Ind. Electron. 54, 2751-2760 (2007).

C. C. Chen, C. Y. Wu, Y. M. Chen, T. F. Wu, "Sequential color LED backlight driving system for LCD panels," IEEE Trans. Power Electron. 22, 919-925 (2007).

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, J. F. Gilchrist, "Enhancement of light extraction efficiency of InGaN quantum wells light emitting didoes using SiO2/Polystyrene microlens arrays," Appl. Phys. Lett. 91, (2007) Art. 221107.

AIP Advances (1)

I. E. Titkov, D. A. Sannikov, Y. M. Park, J. K. Son, "Blue light emitting diode internal and injection efficiency," AIP Advances 2, (2012) Art. 032117.

Appl. Phys. Exp. (2)

A. Sztein, H. Ohta, J. Sonoda, A. Ramu, J. E. Bowers, S. P. DenBaars, S. Nakamura, "GaN-based integrated lateral thermoelectric device for micro-power generation," Appl. Phys. Exp. 2, (2009) Art. 111003.

B. N. Pantha, I. Feng, K. Aryal, J. Li, J. Y. Lin, H. X. Jiang, "Erbium-doped AllGaN alloys as high-temperature thermoelectric materials," Appl. Phys. Exp. 4, (2011) Art. 051001.

Appl. Phys. Lett. (3)

H. Tong, J. Zhang, G. Y. Liu, J. Herbsommer, G. S. Huang, N. Tansu, "Thermoelectric properties of lattice-matched AlInN alloy grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 97, (2010) Art. 112105.

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, J. F. Gilchrist, "Enhancement of light extraction efficiency of InGaN quantum wells light emitting didoes using SiO2/Polystyrene microlens arrays," Appl. Phys. Lett. 91, (2007) Art. 221107.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, C. Wetzel, "Defect-reduced green GaInN/GaN light-emitting diode on nanopattern sapphire," Appl. Phys. Lett. 98, (2011) Art. 151102.

IEEE J. Sel. Topics Quantum Electron. (1)

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Sel. Topics Quantum Electron. 15, 1066-1072 (2009).

IEEE Photon. J. (1)

X. H. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, N. Tansu, "Light extraction efficiency and radiation patterns of III-Nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios," IEEE Photon. J. 3, 489-499 (2011).

IEEE Trans. Ind. Electron. (5)

S. J. Choi, T. H. Kim, "Symmetric current-balancing circuit for LED backlight with dimming," IEEE Trans. Ind. Electron. 59, 1698-1707 (2012).

C. Y. Wu, T. F. Wu, J. R. Tsai, Y. M. Chen, C. C. Chen, "Multi-string LED backlight driving system for LCD panels with color sequential display and area control," IEEE Trans. Ind. Electron. 55, 3791-3800 (2008).

H. J. Chiu, S. J. Cheng, "LED backlight driving system for large-scale LCD panels," IEEE Trans. Ind. Electron. 54, 2751-2760 (2007).

Y. C. Li, C. L. Chen, "A novel single-stage high-power-factor ac-to-dc LED driving circuit with leakage inductance energy recycling," IEEE Trans. Ind. Electron. 59, 793-802 (2012).

D. D. C. Lu, H. H. C. Iu, V. Pjevalica, "Single-stage ac/dc boost-forward converter with high power factor and regulated bus and output voltages," IEEE Trans. Ind. Electron. 56, 2128-2132 (2009).

IEEE Trans. Power Electron. (4)

H. Ma, J. S. Lai, Q. Feng, W. Yu, C. Zheng, Z. Zhao, "A novel valley-fill SEPIC-derived power supply without electrolytic capacitors for LED lighting application," IEEE Trans. Power Electron. 27, 3057-3071 (2012).

W. Y. Choi, J. M. Kwon, J. J. Lee, H. Y. Jang, B. H. Kwon, "Single-stage soft-switching converter with boost type of active clamp for wide input voltage ranges," IEEE Trans. Power Electron. 24, 730-741 (2009).

M. Arias, D. G. Lamar, F. F. Linera, D. Balocco, A. A. Diallo, J. Sebastian, "Design of a soft-switching asymmetrical half-bridge converter as second stage of an LED driver for street lighting application," IEEE Trans. Power Electron. 22, 1608-1621 (2012).

C. C. Chen, C. Y. Wu, Y. M. Chen, T. F. Wu, "Sequential color LED backlight driving system for LCD panels," IEEE Trans. Power Electron. 22, 919-925 (2007).

IET Optoelectron. (1)

H. P. Zhao, G. Y. Liu, X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, N. Tansu, "Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime," IET Optoelectron. 3, 283-295 (2009).

J. Appl. Phys. (2)

J. Zhang, H. Tong, G. Liu, J. A. Herbsommer, G. S. Huang, N. Tansu, "Characterizations of seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various in-contents," J. Appl. Phys. 109, (2011) Art. 053706.

J. Zhang, S. Kutlu, G. Liu, N. Tansu, "High-temperature characteristics of seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy," J. Appl. Phys. 110, (2011) Art. 043710.

J. Cryst. Growth (1)

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Abbreviated MOVPE nucleation of III-Nitride light-emitting diodes on nano-patterned sapphire," J. Cryst. Growth 312, 1311-1315 (2010).

J. Display. Technol. (2)

D. Y. Cho, W. S. Oh, G. W. Moon, "A novel adaptive dimming LED backlight system with current compensated X-Y channel drivers for LCD TVs," J. Display. Technol. 7, 29-35 (2011).

W. S. Oh, D. Y. Cho, K. M. Cho, G. W. Moon, B. C. Yang, T. S. Jang, "A novel two-dimensional adaptive dimming technique of X-Y channel drivers for LED backlight system in LCD TVs," J. Display. Technol. 5, 20-26 (2009).

Nanoscale Res. Lett. (1)

G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, N. Tansu, "Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography," Nanoscale Res. Lett. 6, (2011) Art. 342.

Opt. Express (2)

Semicond. Sci. Tech. (1)

R. M. Farrel, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Tech. 27, (2012).

Solid-State Electron. (1)

H. Zhao, G. Liu, R. A. Arif, N. Tansu, "Current injection efficiency quenching leading to efficiency droop in InGaN quantum well light-emitting diodes," Solid-State Electron. 54, 1119-1124 (2010).

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