Abstract

In this paper, we have proposed a “Chess board” like photonic crystal (PhC) structure on top surface of p-GaN/SiO<sub>2</sub> layer in conventional LED, on top surface of n-GaN layer in vertical LED and an embedded PhC structure in n-GaN layer for achieving an improved light extraction in GaN/InGaN LEDs. The results are compared with that of the LED structures with conventional 2-D PhC structures and of the conventional LEDs. Results from these simulations show that the maximum light extraction for conventional LED having “Chess board” like structure occurs for a grating period of 0.6 μm with a grating-depth of 0.18 μm, which gives ~4 times enhancement compared to that of conventional LED and 1.2–1.4 times compared to that of LED with conventional 2-D PhCs. In case of a vertical LED, the maximum enhancement in light extraction occurs for the same grating-period with a depth of 0.5 μm, which is ~3.5 times compared to that of the conventional vertical LEDs. We have also simulated our proposed structure on top of SiO<sub>2</sub>-on-p-GaN layer in order to avoid the etching of p-GaN layer, which shows ~2.2 times enhancement in comparison to that of conventional LED. For the proposed embedded PhC structure in n-GaN layer, the light extraction is enhanced by a factor of 2.8–3.5 as compared to the conventional LED.

© 2013 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription