Abstract

We have studied the initial growth modes of GaN on patterned sapphire substrate (PSS) with different initial TMGa flow rates. The FWHM of the (102) XRD spectrum of GaN on PSS increased from 470 to 580 arcsec when the initial TMGa flow rate was increased from 80 to 200 sccm. A low TMGa flow rate sufficiently suppresses GaN island growth on the top of the pattern and hence improves GaN crystal quality. The electrical and optical characteristics of GaN-based LEDs on PSS with low initial TMGa were also improved. More than 90% of the GaN LED chips with low initial GaN growth rate can hold the 1-kV machine-mode electrostatic discharge level.

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  1. S. Nakamura, T. Mukai, M. Senoh, "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes," Appl. Phys. Lett. 64, 1687-1689 (1994).
  2. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, U. H. Liaw, "InGaN–GaN multiquantum-well blue and green light-emitting diodes," IEEE J. Sel. Top. Quantum Electron. 8, 278-283 (2002).
  3. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, J. M. Tsai, "400-nm InGaN–GaN and InGaN–AlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Top. Quantum Electron. 8, 744-748 (2002).
  4. J. Zhang, H. Zhao, N. Tansu, "Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers," Appl. Phys. Lett. 97, (2010) Art. ID 111105.
  5. Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, T. Muka, "Ultra-high efficiency white light emitting diodes," Jpn. J. Appl. Phys. 45, 1084- (2006).
  6. F. A. Pounce, D. P. Bour, "Nitride-based semiconductors for blue and green light-emitting devices," Nature 386, 351-359 (1997).
  7. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, T. Mukai, "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode," Jpn. J. Appl. Phys. 41, 1431- (2002).
  8. D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, J. S. Fang, "Enhanced output power of near-ultraviolet InGaN–GaN LEDs grown on patterned sapphire substrates," IEEE Photon. Technol. Lett. 17, 288-290 (2005).
  9. Z. H. Feng, K. M. Lau, "Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates," IEEE Photon. Technol. Lett. 17, 1812-1814 (2005).
  10. Y. J. Lee, H. C. Kuo, T. C. Lu, S. C. Wang, K. W. Ng, K. M. Lau, Z. P. Yang, S. P. Chang, S. Y. Lin, "Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces," J. Lightw. Technol. 26, 1455-1463 (2008).
  11. Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire," J. Cryst. Growth 312, 1311-1315 (2010).
  12. Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Sel. Top. Quantum Electron. 15, 1066-1072 (2009).
  13. Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, "Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire," Appl. Phys. Lett. 98, (2011) Art. ID 151102.
  14. R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol. 27, (2012) Art. ID 024001-024001-14.
  15. D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, J. S. Speck, "Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy," J. Vac. Sci. Technol. 30, (2012) Art. ID 041513.
  16. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu 1, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Express 19, A-991-A-1007 (2011).
  17. J. Zhang, N. Tansu, "Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes," J. Appl. Phys. 110, (2011) Art. ID 113110.
  18. H. P. Zhao, G. Y. Liu, X.-H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, N. Tansu, "Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime," IET Optoelectron. 3, 283-295 (2009).
  19. J. H. Lee, D. Y. Lee, B. W. Oh, J. H. Lee, "Comparison of InGaN-based LEDs grown on conventional sapphire and cone-shape-patterned sapphire substrate," IEEE Trans. Electron Devices 57, 157-163 (2010).
  20. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu, "Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact," IEEE Photon. Technol. Lett. 16, 1002-1004 (2004).
  21. C. H. Kuo, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai, P. T. Wang, "Nitride-based light-emitting diodes with p-AlInGaN surface layers," IEEE Electron Device Lett. 52, 2346-2349 (2005).
  22. M. Ohring, Materials Science of Thin Films: Deposition and Structure (Academic, 2000).

2012 (2)

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol. 27, (2012) Art. ID 024001-024001-14.

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, J. S. Speck, "Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy," J. Vac. Sci. Technol. 30, (2012) Art. ID 041513.

2011 (3)

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu 1, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Express 19, A-991-A-1007 (2011).

J. Zhang, N. Tansu, "Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes," J. Appl. Phys. 110, (2011) Art. ID 113110.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, "Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire," Appl. Phys. Lett. 98, (2011) Art. ID 151102.

2010 (3)

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire," J. Cryst. Growth 312, 1311-1315 (2010).

J. Zhang, H. Zhao, N. Tansu, "Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers," Appl. Phys. Lett. 97, (2010) Art. ID 111105.

J. H. Lee, D. Y. Lee, B. W. Oh, J. H. Lee, "Comparison of InGaN-based LEDs grown on conventional sapphire and cone-shape-patterned sapphire substrate," IEEE Trans. Electron Devices 57, 157-163 (2010).

2009 (2)

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Sel. Top. Quantum Electron. 15, 1066-1072 (2009).

H. P. Zhao, G. Y. Liu, X.-H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, N. Tansu, "Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime," IET Optoelectron. 3, 283-295 (2009).

2008 (1)

Y. J. Lee, H. C. Kuo, T. C. Lu, S. C. Wang, K. W. Ng, K. M. Lau, Z. P. Yang, S. P. Chang, S. Y. Lin, "Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces," J. Lightw. Technol. 26, 1455-1463 (2008).

2006 (1)

Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, T. Muka, "Ultra-high efficiency white light emitting diodes," Jpn. J. Appl. Phys. 45, 1084- (2006).

2005 (3)

D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, J. S. Fang, "Enhanced output power of near-ultraviolet InGaN–GaN LEDs grown on patterned sapphire substrates," IEEE Photon. Technol. Lett. 17, 288-290 (2005).

Z. H. Feng, K. M. Lau, "Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates," IEEE Photon. Technol. Lett. 17, 1812-1814 (2005).

C. H. Kuo, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai, P. T. Wang, "Nitride-based light-emitting diodes with p-AlInGaN surface layers," IEEE Electron Device Lett. 52, 2346-2349 (2005).

2004 (1)

S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu, "Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact," IEEE Photon. Technol. Lett. 16, 1002-1004 (2004).

2002 (3)

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, T. Mukai, "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode," Jpn. J. Appl. Phys. 41, 1431- (2002).

S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, U. H. Liaw, "InGaN–GaN multiquantum-well blue and green light-emitting diodes," IEEE J. Sel. Top. Quantum Electron. 8, 278-283 (2002).

S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, J. M. Tsai, "400-nm InGaN–GaN and InGaN–AlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Top. Quantum Electron. 8, 744-748 (2002).

1997 (1)

F. A. Pounce, D. P. Bour, "Nitride-based semiconductors for blue and green light-emitting devices," Nature 386, 351-359 (1997).

1994 (1)

S. Nakamura, T. Mukai, M. Senoh, "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes," Appl. Phys. Lett. 64, 1687-1689 (1994).

Appl. Phys. Lett. (3)

S. Nakamura, T. Mukai, M. Senoh, "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes," Appl. Phys. Lett. 64, 1687-1689 (1994).

J. Zhang, H. Zhao, N. Tansu, "Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers," Appl. Phys. Lett. 97, (2010) Art. ID 111105.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, "Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire," Appl. Phys. Lett. 98, (2011) Art. ID 151102.

IEEE Electron Device Lett. (1)

C. H. Kuo, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai, P. T. Wang, "Nitride-based light-emitting diodes with p-AlInGaN surface layers," IEEE Electron Device Lett. 52, 2346-2349 (2005).

IEEE J. Sel. Top. Quantum Electron. (2)

S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, U. H. Liaw, "InGaN–GaN multiquantum-well blue and green light-emitting diodes," IEEE J. Sel. Top. Quantum Electron. 8, 278-283 (2002).

S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, J. M. Tsai, "400-nm InGaN–GaN and InGaN–AlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Top. Quantum Electron. 8, 744-748 (2002).

IEEE J. Sel. Top. Quantum Electron. (1)

Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Sel. Top. Quantum Electron. 15, 1066-1072 (2009).

IEEE Photon. Technol. Lett. (3)

D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, J. S. Fang, "Enhanced output power of near-ultraviolet InGaN–GaN LEDs grown on patterned sapphire substrates," IEEE Photon. Technol. Lett. 17, 288-290 (2005).

Z. H. Feng, K. M. Lau, "Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates," IEEE Photon. Technol. Lett. 17, 1812-1814 (2005).

S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu, "Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact," IEEE Photon. Technol. Lett. 16, 1002-1004 (2004).

IEEE Trans. Electron Devices (1)

J. H. Lee, D. Y. Lee, B. W. Oh, J. H. Lee, "Comparison of InGaN-based LEDs grown on conventional sapphire and cone-shape-patterned sapphire substrate," IEEE Trans. Electron Devices 57, 157-163 (2010).

IET Optoelectron. (1)

H. P. Zhao, G. Y. Liu, X.-H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, N. Tansu, "Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime," IET Optoelectron. 3, 283-295 (2009).

J. Appl. Phys. (1)

J. Zhang, N. Tansu, "Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes," J. Appl. Phys. 110, (2011) Art. ID 113110.

J. Cryst. Growth (1)

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire," J. Cryst. Growth 312, 1311-1315 (2010).

J. Lightw. Technol. (1)

Y. J. Lee, H. C. Kuo, T. C. Lu, S. C. Wang, K. W. Ng, K. M. Lau, Z. P. Yang, S. P. Chang, S. Y. Lin, "Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces," J. Lightw. Technol. 26, 1455-1463 (2008).

J. Vac. Sci. Technol. (1)

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, J. S. Speck, "Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy," J. Vac. Sci. Technol. 30, (2012) Art. ID 041513.

Jpn. J. Appl. Phys. (2)

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, T. Mukai, "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode," Jpn. J. Appl. Phys. 41, 1431- (2002).

Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, T. Muka, "Ultra-high efficiency white light emitting diodes," Jpn. J. Appl. Phys. 45, 1084- (2006).

Nature (1)

F. A. Pounce, D. P. Bour, "Nitride-based semiconductors for blue and green light-emitting devices," Nature 386, 351-359 (1997).

Opt. Express (1)

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu 1, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Express 19, A-991-A-1007 (2011).

Semicond. Sci. Technol. (1)

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol. 27, (2012) Art. ID 024001-024001-14.

Other (1)

M. Ohring, Materials Science of Thin Films: Deposition and Structure (Academic, 2000).

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