Abstract

This study investigates the optical and electrical characteristics in hybrid warm white high-voltage light-emitting diodes (HV-LEDs). The luminous efficiency of the hybrid warm white LED in this study improved by 11% and 51%, compared to conventional cool and warm LEDs, respectively, solving the warm white gap in white LEDs. The efficiency droop of the hybrid warm white LED was reduced to 21.8% from 26.8% for the conventional cool white LED, and from 26.3% in the conventional warm white LED at 40 mA (35 A/cm<sup>2</sup>) the operated current. Furthermore, the color rendering index (CRI) and angular correlated color temperature (CCT) were analyzed, indicating a significant improvement in hybrid warm white HV-LEDs.

© 2013 IEEE

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2012 (3)

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Tech. 27, 024001 (2012).

C. H. Yen, W. C. Lai, Y. Y. Yang, C. K. Wang, T. K. Ko, S. J. Hon, S. J. Chang, "GaN-based light-emitting diode with sputtered AlN nucleation layer," IEEE Photon. Technol. Lett. 24, 294-296 (2012).

J. I. Shim, D. P. Han, H. Kim, D. S. Shin, G. B. Lin, D. S. Meyaard, Q. Shan, J. Cho, E. F. Schubert, H. Shim, C. Sone, "Efficiency droop in AlGaInP and GaInN light-emitting diodes," Appl. Phys. Lett. 100, 111106 (2012).

2011 (4)

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, G. C. Chi, "Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes," IEEE Electron Devices Lett. 32, 1098-1100 (2011).

J. Zhang, N. Tansu, "Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes," J. Appl. Phys. 110, (2011) Art. 113110.

H. C. Kuo, C. W. Hung, H. C. Chen, K. J. Chen, C. H. Wang, C. W. Sher, C. C. Yeh, C. C. Lin, C. H. Chen, Y. J. Cheng, "Patterned structure of remote phosphor for phosphor-converted white LEDs," Opt. Express 19, A930-A936 (2011).

H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Express 19, A991-A1007 (2011).

2010 (4)

T. Erdem, S. Nizamoglu, X. W. Sun, H. V. Demir, "A photometric investigation of ultra-efficient LEDs with high color rendering index and high luminous efficacy employing nanocrystal quantum dot luminophores," Opt. Express 18, 340-347 (2010).

H. Zhao, G. Liu, R. A. Arif, N. Tansu, "Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes," Solid-State Electron. 54, 1119-1124 (2010).

A. A. Setlur, E. V. Radkov, C. S. Henderson, J.-H. Her, A. M. Srivastava, N. Karkada, M. S. Kishore, N. P. Kumar, D. Aesram, A. Deshpande, B. Kolodin, L. S. Grigorov, U. Happek, "Energy-efficient, high-color-rendering LED lamps using oxyfluoride and fluoride phosphors," Chem. Mater. 22, 4076-4082 (2010).

C. H. Wang, S. P. Chang, W. T. Chang, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, "Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells," Appl. Phys. Lett. 97, 181101 (2010).

2009 (3)

K. T. Delaney, P. Rinke, C. G. Van de Walle, "Auger recombination rates in nitrides from first principles," Appl. Phys. Lett. 94, (2009) Art. 191109.

T. Fukui, K. Kamon, J. Takeshita, H. Hayashi, T. Miyachi, Y. Uchida, S. Kurai, T. Taguchi, "Superior illuminant characteristics of color rendering and luminous efficacy in multilayered phosphor conversion white light sources excited by near-ultraviolet light-emitting diodes," Jpn. J. Appl. Phys. 48, 112101 (2009).

Y. H. Won, H. S. Jang, K. W. Cho, Y. S. Song, D. Y. Leon, H. K. Kwon, "Effect of phosphor geometry on the luminous efficiency of high-power white light-emitting diodes with excellent color rendering property," Opt. Lett. 34, 1-3 (2009).

2008 (1)

H. H. Yen, H. C. Kuo, W. Y. Yeh, "Characteristics of single-chip GaN-based alternating current light-emitting diode," Jpn. J. Appl. Phys. 47, 8808-8810 (2008).

2007 (2)

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, Y. Park, "Origin of efficiency droop in GaN-based light-emitting diodes," Appl. Phys. Lett. 91, 183507 (2007).

P. Vitta, P. Pobedinskas, A. Zukauskas, "Phosphor thermometry in white light-emitting diodes," IEEE Photon. Technol. Lett. 19, 399-401 (2007).

2005 (1)

E. F. Schubert, J. K. Kim, "Solid-state light sources getting smart," Science 308, 1274-1278 (2005).

Appl. Phys. Lett. (4)

C. H. Wang, S. P. Chang, W. T. Chang, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, "Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells," Appl. Phys. Lett. 97, 181101 (2010).

K. T. Delaney, P. Rinke, C. G. Van de Walle, "Auger recombination rates in nitrides from first principles," Appl. Phys. Lett. 94, (2009) Art. 191109.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, Y. Park, "Origin of efficiency droop in GaN-based light-emitting diodes," Appl. Phys. Lett. 91, 183507 (2007).

J. I. Shim, D. P. Han, H. Kim, D. S. Shin, G. B. Lin, D. S. Meyaard, Q. Shan, J. Cho, E. F. Schubert, H. Shim, C. Sone, "Efficiency droop in AlGaInP and GaInN light-emitting diodes," Appl. Phys. Lett. 100, 111106 (2012).

Chem. Mater. (1)

A. A. Setlur, E. V. Radkov, C. S. Henderson, J.-H. Her, A. M. Srivastava, N. Karkada, M. S. Kishore, N. P. Kumar, D. Aesram, A. Deshpande, B. Kolodin, L. S. Grigorov, U. Happek, "Energy-efficient, high-color-rendering LED lamps using oxyfluoride and fluoride phosphors," Chem. Mater. 22, 4076-4082 (2010).

IEEE Electron Devices Lett. (1)

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, G. C. Chi, "Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes," IEEE Electron Devices Lett. 32, 1098-1100 (2011).

IEEE Photon. Technol. Lett. (2)

C. H. Yen, W. C. Lai, Y. Y. Yang, C. K. Wang, T. K. Ko, S. J. Hon, S. J. Chang, "GaN-based light-emitting diode with sputtered AlN nucleation layer," IEEE Photon. Technol. Lett. 24, 294-296 (2012).

P. Vitta, P. Pobedinskas, A. Zukauskas, "Phosphor thermometry in white light-emitting diodes," IEEE Photon. Technol. Lett. 19, 399-401 (2007).

J. Appl. Phys. (1)

J. Zhang, N. Tansu, "Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes," J. Appl. Phys. 110, (2011) Art. 113110.

Jpn. J. Appl. Phys. (2)

T. Fukui, K. Kamon, J. Takeshita, H. Hayashi, T. Miyachi, Y. Uchida, S. Kurai, T. Taguchi, "Superior illuminant characteristics of color rendering and luminous efficacy in multilayered phosphor conversion white light sources excited by near-ultraviolet light-emitting diodes," Jpn. J. Appl. Phys. 48, 112101 (2009).

H. H. Yen, H. C. Kuo, W. Y. Yeh, "Characteristics of single-chip GaN-based alternating current light-emitting diode," Jpn. J. Appl. Phys. 47, 8808-8810 (2008).

Opt. Express (3)

Opt. Lett. (1)

Science (1)

E. F. Schubert, J. K. Kim, "Solid-state light sources getting smart," Science 308, 1274-1278 (2005).

Semicond. Sci. Tech. (1)

R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Tech. 27, 024001 (2012).

Solid-State Electron. (1)

H. Zhao, G. Liu, R. A. Arif, N. Tansu, "Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes," Solid-State Electron. 54, 1119-1124 (2010).

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