X. H. Li, R. Song, Y. K. Ee, P. Kumnorkaew, J. F.
Gilchrist, N. Tansu, "Light extraction efficiency and radiation patterns of
III-nitride light-emitting diodes with colloidal microlens arrays with various
aspect ratios," IEEE Photon. J. 3, 489-499 (2011).

E. Kioupakis, P. Rinke, K. T. Delaney, C. G. Van de
Walle, "Indirect Auger recombination as a cause of efficiency droop in nitride
light emitting diodes," Appl. Phys. Lett. 98, 161107 (2011).

H. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V.
Dierolf, N. Tansu, "Approaches for high internal quantum efficiency green InGaN
light-emitting diodes with large overlap quantum wells," Opt. Express 19,
A991-A1007 (2011).

H. Zhao, G. Liu, R. A. Arif, N. Tansu, "Current
injection efficiency quenching leading to efficiency droop in InGaN quantum well
light-emitting diodes," Solid State Electron. 54, 1119-1124
(2010).

K. M. Yu, S. V. Novikov, R. Broesler, C. R. Staddon,
M. Hawkridge, Z. Liliental-Weber, I. Demchenko, J. D. Denlinger, V. M. Kao, F.
Luckert, R. W. Martin, W. Walukiewicz, C. T. Foxon, "Non-equilibrium GaNAs alloys
with band gap ranging from 0.8–3.4 eV," Physica Status Solidi (c) 7, 1847-1849
(2010).

X. Li, H. Liu, X. Ni, U. Ozgur, H. Morkoc, "Effect of
carrier spillover and Auger recombination on the efficiency droop in InGaN-based
blue LEDs," Superlattices and Microstructures 47, 118-122 (2010).

P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D.
J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G.
Egdell, F. Bechstedt, C. F. McConville, "Band gap, electronic structure, and
surface electron accumulation of cubic and rhombohedral In_{2}O_{3}," Phys. Rev. B, Condens. Matter 79, 205211 (2009).

K. T. Delaney, P. Rinke, C. G. Van de Walle, "Auger
recombination rates in nitrides from first principles," Appl. Phys. Lett. 94,
191109 (2009).

M. H. Crawford, "LEDs for solid-state lighting:
Performance chanllenges and recent advances," IEEE J. Sel. Topics Quantum
Electron. 15, 1028-1040 (2009).

J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M.
Sabathil, N. Linder, S. Lutgen, "On the importance of radiative and Auger losses
in GaN-based quantum wells," Appl. Phys. Lett. 92, 261103 (2008).

J. Xie, X. Ni, Q. Fan, R. Shimada, U. Ozgur, H.
Morkoc, "On the efficiency droop in InGaN multiple quantum well blue light
emitting diodes and its reduction with p-doped quantum well barriers," Appl. Phys.
Lett. 93, 121107 (2008).

R. A. Arif, H. Zhao, N. Tansu, "Type-II InGaN-GaNAs
quantum wells active regions for lasers applications," Appl. Phys. Lett. 92,
011104 (2008).

H. Zhao, R. A. Arif, N. Tansu, "Self consistent gain
analysis of type-II ‘W’ InGaN-GaNAs quantum well lasers," J. Appl. Phys. 104,
043104 (2008).

M. Shishkin, M. Marsman, G. Kresse, "Accurate
quasiparticle spectra from self-consistent GW calculations with vertex
corrections," Phys. Rev. Lett. 99, 246403 (2007).

Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner,
A. Munkholm, M. R. Krames, "Auger recombination in InGaN measured by
photoluminescence," Appl. Phys. Lett. 91, 141101 (2007).

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F.
Schubert, J. Piprek, Y. Park, "Origin of efficiency droop in GaN-based
light-emitting diodes," Appl. Phys. Lett. 91, 183507 (2007).

M. Krames, O.B. Shchekin, R. Mueller-Mach, G.O.
Mueller, L. Zhou, G. Harbers, M.G. Craford, "Status and future of high-power
light-emitting diodes for solid-state lighting," J. Display Technol. 3, 160-175
(2007).

A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A.
Lavrinovich, Y. T. Rebane, D. V. Tarkhin, Y. G. Shreter, "Effect of the joule
heating on the quantum efficiency and choice of thermal conditions for high-power
blue InGaN/GaN LEDs," Semicond. 40, 605-610 (2006).

K. Laaksonen, H.-P. Komsa, E. Arola, T. T. Rantala, R.
M. Nieminen, "Computational study of GaAs_{1-x}N_{x} and
GaN_{1-y}As_{y} alloys and arsenic impurities in GaN," J.
Phys.: Condens. Matter 18, 10097-10114 (2006).

I. H. Brown, P. Blood, P. M. Smowton, J. D. Thomson,
S. M. Olaizola, A. M. Fox, P. J. Parbrook, W. W. Chow, "Time evolution of the
screening of piezoelectric fields in InGaN quantum wells," IEEE J. Quantum
Electron. 42, 1202-1208 (2006).

L. Xu, D. Patel, C. S. Menoni, J. Y. Yeh, L. J. Mawst,
N. Tansu, "Optical determination of the electron effective mass of strain
compensated In0.4Ga0.6As0.995N0.005/GaAs single quantum well," Appl. Phys. Lett.
89, 171112 (2006).

S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen,
J. S. Harris, "On the temperature sensitivity of 1.5-μm GaInNAsSb
lasers," IEEE J. Sel. Topics Quantum Electron. 11, 1089-1098
(2005).

A. Lindsay, E. P. O'Reilly, "Unification of the band
anticrossing and cluster-state models of dilute nitride semiconductor alloys,"
Phys. Rev. Lett. 93, 196402 (2004).

A. Kimura, C. A. Paulson, H. F. Tang, T. F. Kuech,
"Epitaxial GaN_{1-y}As_{y} layers with high As content
grown by metalorganic vapor phase epitaxy and their band gap energy," Appl. Phys.
Lett. 84, 1489-1491 (2004).

J. Wu, W. Walukiewicz, K. M. Yu, J. D. Denlinger, W.
Shan, J. W. Ager, IIIA. Kimura, H. F. Tang, T. F. Kuech, "Valence band
hybridization in N-rich GaN_{1-x}As_{x} alloys," Phys.
Rev. B, Condens. Matter 70, 115214 (2004).

N. Tansu, J. Y. Yeh, L. J. Mawst, "High-performance
1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical
vapor deposition," IEEE J. Sel. Topics Quantum Electron. 9, 1220-1227
(2003).

I. Vurgaftman, J. R. Meyer, L. R. Ram-Mohan, "Band
parameters for III-V compound semiconductors and their alloys," J. Appl. Phys. 89,
5815-5875 (2001).

S. F. Chichibu, T. Azuhata, M. Sugiyama, T. Kitamura,
Y. Ishida, H. Okumura, H. Nakanishi, T. Sota, T. Mukai, "Optical and structural
studies in InGaN quantum well structure laser diodes," J. Vacuum Sci. Technol. B:
Microelectron. and Nanometer Structures 19, 2177-2183 (2001).

C. G. Van de Walle, "Arsenic impurities in GaN," Appl.
Phys. Lett. 76, 1009-1011 (2000).

T. Mattila, A. Zunger, "P-P and As-As isovalent
impurity pairs in GaN: Interaction of deep t2 levels," Phys. Rev. B, Condens.
Matter 59, 9943-9953 (1999).

K. Uesugi, N. Morooka, I. Suemune, "Reexamination of N
composition dependence of coherently grown GaNAs band gap energy with
high-resolution x-ray diffraction mapping measurements," Appl. Phys. Lett. 74,
1254-1256 (1999).

X. Li, S. Kim, E. E. Reuter, S. G. Bishop, J. J.
Coleman, "The incorporation of arsenic in GaN by metalorganic chemical vapor
deposition," Appl. Phys. Lett. 72, 1990-1992 (1998).

X. Li, S. G. Bishop, J. J. Coleman, "GaN epitaxial
lateral overgrowth and optical characterization," Appl. Phys. Lett. 73, 1179-1181
(1998).

S. Nakamura, "The roles of structural imperfections in
InGaN-based blue light-emitting diodes and laser diodes," Science 281, 956-961
(1998).

G. Kresse, J. Furthmuller, "Efficient iterative
schemes for ab initio total-energy calculations using a plane-wave basis set,"
Phys. Rev. B, Condens. Matter 54, 11169-11186 (1996).

M. Suzuki, T. Uenoyama, "First-principles calculations
of effective-mass parameters of AlN and GaN," Phys. Rev. B, Condens. Matter 52,
8132-8139 (1995).

V. Fiorentini, A. Baldereschi, "Dielectric scaling of
the self-energy scissor operator in semiconductors and insulators," Phys. Rev. B,
Condens. Matter 51, 17196-17198 (1995).

A. Sugimura, "Band-to-band Auger effect in long
wavelength multinary III-V semiconductor lasers," IEEE J. Quantum Electron. QE-18,
352-363 (1982).

Y. P. Varshni, "Temperature dependence of the energy
gap in semiconductors," Physica 34, 149-154 (1967).

X. Li, S. Kim, E. E. Reuter, S. G. Bishop, J. J.
Coleman, "The incorporation of arsenic in GaN by metalorganic chemical vapor
deposition," Appl. Phys. Lett. 72, 1990-1992 (1998).

X. Li, S. G. Bishop, J. J. Coleman, "GaN epitaxial
lateral overgrowth and optical characterization," Appl. Phys. Lett. 73, 1179-1181
(1998).

K. Uesugi, N. Morooka, I. Suemune, "Reexamination of N
composition dependence of coherently grown GaNAs band gap energy with
high-resolution x-ray diffraction mapping measurements," Appl. Phys. Lett. 74,
1254-1256 (1999).

L. Xu, D. Patel, C. S. Menoni, J. Y. Yeh, L. J. Mawst,
N. Tansu, "Optical determination of the electron effective mass of strain
compensated In0.4Ga0.6As0.995N0.005/GaAs single quantum well," Appl. Phys. Lett.
89, 171112 (2006).

A. Kimura, C. A. Paulson, H. F. Tang, T. F. Kuech,
"Epitaxial GaN_{1-y}As_{y} layers with high As content
grown by metalorganic vapor phase epitaxy and their band gap energy," Appl. Phys.
Lett. 84, 1489-1491 (2004).

R. A. Arif, H. Zhao, N. Tansu, "Type-II InGaN-GaNAs
quantum wells active regions for lasers applications," Appl. Phys. Lett. 92,
011104 (2008).

C. G. Van de Walle, "Arsenic impurities in GaN," Appl.
Phys. Lett. 76, 1009-1011 (2000).

K. T. Delaney, P. Rinke, C. G. Van de Walle, "Auger
recombination rates in nitrides from first principles," Appl. Phys. Lett. 94,
191109 (2009).

J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M.
Sabathil, N. Linder, S. Lutgen, "On the importance of radiative and Auger losses
in GaN-based quantum wells," Appl. Phys. Lett. 92, 261103 (2008).

E. Kioupakis, P. Rinke, K. T. Delaney, C. G. Van de
Walle, "Indirect Auger recombination as a cause of efficiency droop in nitride
light emitting diodes," Appl. Phys. Lett. 98, 161107 (2011).

Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner,
A. Munkholm, M. R. Krames, "Auger recombination in InGaN measured by
photoluminescence," Appl. Phys. Lett. 91, 141101 (2007).

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F.
Schubert, J. Piprek, Y. Park, "Origin of efficiency droop in GaN-based
light-emitting diodes," Appl. Phys. Lett. 91, 183507 (2007).

J. Xie, X. Ni, Q. Fan, R. Shimada, U. Ozgur, H.
Morkoc, "On the efficiency droop in InGaN multiple quantum well blue light
emitting diodes and its reduction with p-doped quantum well barriers," Appl. Phys.
Lett. 93, 121107 (2008).

A. Sugimura, "Band-to-band Auger effect in long
wavelength multinary III-V semiconductor lasers," IEEE J. Quantum Electron. QE-18,
352-363 (1982).

I. H. Brown, P. Blood, P. M. Smowton, J. D. Thomson,
S. M. Olaizola, A. M. Fox, P. J. Parbrook, W. W. Chow, "Time evolution of the
screening of piezoelectric fields in InGaN quantum wells," IEEE J. Quantum
Electron. 42, 1202-1208 (2006).

N. Tansu, J. Y. Yeh, L. J. Mawst, "High-performance
1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical
vapor deposition," IEEE J. Sel. Topics Quantum Electron. 9, 1220-1227
(2003).

S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen,
J. S. Harris, "On the temperature sensitivity of 1.5-μm GaInNAsSb
lasers," IEEE J. Sel. Topics Quantum Electron. 11, 1089-1098
(2005).

M. H. Crawford, "LEDs for solid-state lighting:
Performance chanllenges and recent advances," IEEE J. Sel. Topics Quantum
Electron. 15, 1028-1040 (2009).

X. H. Li, R. Song, Y. K. Ee, P. Kumnorkaew, J. F.
Gilchrist, N. Tansu, "Light extraction efficiency and radiation patterns of
III-nitride light-emitting diodes with colloidal microlens arrays with various
aspect ratios," IEEE Photon. J. 3, 489-499 (2011).

H. Zhao, R. A. Arif, N. Tansu, "Self consistent gain
analysis of type-II ‘W’ InGaN-GaNAs quantum well lasers," J. Appl. Phys. 104,
043104 (2008).

I. Vurgaftman, J. R. Meyer, L. R. Ram-Mohan, "Band
parameters for III-V compound semiconductors and their alloys," J. Appl. Phys. 89,
5815-5875 (2001).

K. Laaksonen, H.-P. Komsa, E. Arola, T. T. Rantala, R.
M. Nieminen, "Computational study of GaAs_{1-x}N_{x} and
GaN_{1-y}As_{y} alloys and arsenic impurities in GaN," J.
Phys.: Condens. Matter 18, 10097-10114 (2006).

S. F. Chichibu, T. Azuhata, M. Sugiyama, T. Kitamura,
Y. Ishida, H. Okumura, H. Nakanishi, T. Sota, T. Mukai, "Optical and structural
studies in InGaN quantum well structure laser diodes," J. Vacuum Sci. Technol. B:
Microelectron. and Nanometer Structures 19, 2177-2183 (2001).

T. Mattila, A. Zunger, "P-P and As-As isovalent
impurity pairs in GaN: Interaction of deep t2 levels," Phys. Rev. B, Condens.
Matter 59, 9943-9953 (1999).

V. Fiorentini, A. Baldereschi, "Dielectric scaling of
the self-energy scissor operator in semiconductors and insulators," Phys. Rev. B,
Condens. Matter 51, 17196-17198 (1995).

G. Kresse, J. Furthmuller, "Efficient iterative
schemes for ab initio total-energy calculations using a plane-wave basis set,"
Phys. Rev. B, Condens. Matter 54, 11169-11186 (1996).

M. Suzuki, T. Uenoyama, "First-principles calculations
of effective-mass parameters of AlN and GaN," Phys. Rev. B, Condens. Matter 52,
8132-8139 (1995).

P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D.
J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G.
Egdell, F. Bechstedt, C. F. McConville, "Band gap, electronic structure, and
surface electron accumulation of cubic and rhombohedral In_{2}O_{3}," Phys. Rev. B, Condens. Matter 79, 205211 (2009).

J. Wu, W. Walukiewicz, K. M. Yu, J. D. Denlinger, W.
Shan, J. W. Ager, IIIA. Kimura, H. F. Tang, T. F. Kuech, "Valence band
hybridization in N-rich GaN_{1-x}As_{x} alloys," Phys.
Rev. B, Condens. Matter 70, 115214 (2004).

A. Lindsay, E. P. O'Reilly, "Unification of the band
anticrossing and cluster-state models of dilute nitride semiconductor alloys,"
Phys. Rev. Lett. 93, 196402 (2004).

M. Shishkin, M. Marsman, G. Kresse, "Accurate
quasiparticle spectra from self-consistent GW calculations with vertex
corrections," Phys. Rev. Lett. 99, 246403 (2007).

Y. P. Varshni, "Temperature dependence of the energy
gap in semiconductors," Physica 34, 149-154 (1967).

K. M. Yu, S. V. Novikov, R. Broesler, C. R. Staddon,
M. Hawkridge, Z. Liliental-Weber, I. Demchenko, J. D. Denlinger, V. M. Kao, F.
Luckert, R. W. Martin, W. Walukiewicz, C. T. Foxon, "Non-equilibrium GaNAs alloys
with band gap ranging from 0.8–3.4 eV," Physica Status Solidi (c) 7, 1847-1849
(2010).

S. Nakamura, "The roles of structural imperfections in
InGaN-based blue light-emitting diodes and laser diodes," Science 281, 956-961
(1998).

A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A.
Lavrinovich, Y. T. Rebane, D. V. Tarkhin, Y. G. Shreter, "Effect of the joule
heating on the quantum efficiency and choice of thermal conditions for high-power
blue InGaN/GaN LEDs," Semicond. 40, 605-610 (2006).

H. Zhao, G. Liu, R. A. Arif, N. Tansu, "Current
injection efficiency quenching leading to efficiency droop in InGaN quantum well
light-emitting diodes," Solid State Electron. 54, 1119-1124
(2010).

X. Li, H. Liu, X. Ni, U. Ozgur, H. Morkoc, "Effect of
carrier spillover and Auger recombination on the efficiency droop in InGaN-based
blue LEDs," Superlattices and Microstructures 47, 118-122 (2010).

X. H. Li, H. Tong, H. P. Zhao, N. Tansu, "Band
structure calculation of dilute-As GaNAs by first principle," Proc. SPIE Photonics
West 2010, Phys. & Simulation of Optoelectron. Devices XVIII (2010) pp.
75970H.

Material Designs Inc.Sante FeNMUSA“MedeA-VASP,”
http://www.materialsdesign.com..

S. J. Sweeney, Z. Batool, K. Hild, S. R. Jin, T. J. C.
Hosea, "The potential role of bismide alloys in future photonic devices," 13th
Int. Conf. on Transparent Opt. Networks (ICTON) (2011).