Abstract
InGaN/GaN light-emitting diodes (LEDs) make an important class of optoelectronic
devices, increasingly used in lighting and displays. Conventional InGaN/GaN
LEDs of c-orientation exhibit strong internal polarization fields and suffer
from significantly reduced radiative recombination rates. A reduced polarization
within the device can improve the optical matrix element, thereby enhancing
the optical output power and efficiency. Here, we have demonstrated computationally
that the step-doping in the quantum barriers is effective in reducing the
polarization-induced fields and lowering the energy barrier for hole transport.
Also, we have proven experimentally that such InGaN/GaN LEDs with Si step-doped
quantum barriers indeed outperform LEDs with wholly Si-doped barriers and
those without doped barriers in terms of output power and external quantum
efficiency. The consistency of our numerical simulation and experimental results
indicate the effects of Si step-doping in suppressing quantum-confined stark
effect and enhancing the hole injection, and is promising in improving the
InGaN/GaN LED performance.
© 2012 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription