Abstract

A new gate driver has been designed and fabricated by amorphous silicon (a-Si) technology. With utilizing four clock signals in the design of gate driver on array (GOA), the pull-up transistor has ability for both output charging and discharging, and layout size of the proposed gate driver can be narrowed for bezel panel application. Moreover, lower duty cycle of clock signals can decrease static power loss to further reduce the overall power consumption of the proposed gate driver. The scan direction of the proposed gate driver can be adjusted by switching two direct control signals to present the reversal display of image. The proposed gate driver has been successfully demonstrated in a 4.5-inch WVGA (480 × RGB × 800) TFT-LCD panel and passed reliability tests of the supporting foundry.

© 2013 IEEE

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  1. R. Huq, S. Weisbrod, Phase clocked shift register with cross connecting between stages U.S. Patent 5 434 899 (1995).
  2. H. Lebrun, F. Maurice, J. Magarino, N. Szydlo, "AMLCD with integrated drivers made with amorphous-silicon TFTs," SID Dig. Tech. Papers 403-406 (1995).
  3. F. Maurice, H. Lebrun, N. Szydlo, U. Rossini, R. Chaudet, "High resolution projection valve with the amorphous silicon AMLCD technology," Proc. SPIE (1998) pp. 92-99.
  4. T.-C. Huang, K.-T. Cheng, H.-Y. Tseng, C.-P. Kung, "Reliability analysis for flexible electronics: Case study of integrated a-Si:H TFT scan driver," J. Emerg. Technol. Comput. Syst. 4, 1-23 (2008).
  5. J.-H. Oh, J.-H. Hur, Y.-D. Son, K.-M. Kim, S.-H. Kim, E.-H. Kim, J.-W. Choi, S.-M. Hong, J.-O. Kim, B.-S. Bae, J. Jang, "2.0 inch a-Si:H TFT-LCD with low noise integrated gate driver," SID Dig. Tech. Papers 942-945 (2005).
  6. S.-Y. Yoon, Y.-H. Jang, B. Kim, M.-D. Chun, H.-N. Cho, N.-W. Cho, C.-Y. Sohn, S.-H. Jo, C.-D. Kim, I.-J. Chung, "Highly stable integrated gate driver circuit using a-Si TFT with dual pull-down structure," SID Dig. Tech. Papers 348-351 (2006).
  7. S. Edo, M. Wakagi, S. Komura, "“A 2.2” QVGA a-Si TFT LCD with high reliability integrated gate driver," SID Dig. Tech. Papers 1551-1552 (2006).
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  15. N. Ibaraki, M. Kigoshi, K. Fukuda, J. Kigoshi, "Threshold voltage instability of a-Si:H TFTs in liquid crystal displays," J. Non-Cryst. Solids 115, 138-140 (1989).
  16. H. Cheng, C. Huang, J. Lin, J. Kung, "The reliability of amorphous silicon thin film transistors for LCD under DC and AC stresses," Proc. Solid-State Integr. Circuit Technol. (1998) pp. 834-837.
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2011 (3)

2010 (2)

J.-W. Choi, J.-I. Kim, S.-H. Kim, J. Jang, "Highly reliable amorphous silicon gate driver using stable center-offset thin-film transistors," IEEE Trans. Electron Devices 57, 2330-2334 (2010).

C.-L. Lin, C.-D. Tu, M.-C. Chuang, K.-W. Chou, C.-C. Hung, "A highly stable a-Si:H TFT gate driver circuit with reducing clock duty ratio," Sid Dig. Tech. papers 1360-1362 (2010).

2009 (1)

D. Allee, L. Clark, B. Vogt, R. Shringarpure, S. Venugopal, S. Uppili, K. Kaftanoglu, H. Shivalingaiah, Z.-P. Li, J. Fernando, E. Bawolek, S. O'Rourke, "Circuit-level impact of a-Si:H thin-film-transistor degradation on effects," IEEE Trans. Electron Devices 56, 1166-1176 (2009).

2008 (1)

T.-C. Huang, K.-T. Cheng, H.-Y. Tseng, C.-P. Kung, "Reliability analysis for flexible electronics: Case study of integrated a-Si:H TFT scan driver," J. Emerg. Technol. Comput. Syst. 4, 1-23 (2008).

2006 (2)

S.-Y. Yoon, Y.-H. Jang, B. Kim, M.-D. Chun, H.-N. Cho, N.-W. Cho, C.-Y. Sohn, S.-H. Jo, C.-D. Kim, I.-J. Chung, "Highly stable integrated gate driver circuit using a-Si TFT with dual pull-down structure," SID Dig. Tech. Papers 348-351 (2006).

S. Edo, M. Wakagi, S. Komura, "“A 2.2” QVGA a-Si TFT LCD with high reliability integrated gate driver," SID Dig. Tech. Papers 1551-1552 (2006).

2005 (1)

J.-H. Oh, J.-H. Hur, Y.-D. Son, K.-M. Kim, S.-H. Kim, E.-H. Kim, J.-W. Choi, S.-M. Hong, J.-O. Kim, B.-S. Bae, J. Jang, "2.0 inch a-Si:H TFT-LCD with low noise integrated gate driver," SID Dig. Tech. Papers 942-945 (2005).

1995 (1)

H. Lebrun, F. Maurice, J. Magarino, N. Szydlo, "AMLCD with integrated drivers made with amorphous-silicon TFTs," SID Dig. Tech. Papers 403-406 (1995).

1989 (2)

M. Powell, "The physics of amorphous-silicon thin-film transistors," IEEE Trans. Electron Devices 36, 2753-2763 (1989).

N. Ibaraki, M. Kigoshi, K. Fukuda, J. Kigoshi, "Threshold voltage instability of a-Si:H TFTs in liquid crystal displays," J. Non-Cryst. Solids 115, 138-140 (1989).

IEEE Trans. Electron Devices (3)

J.-W. Choi, J.-I. Kim, S.-H. Kim, J. Jang, "Highly reliable amorphous silicon gate driver using stable center-offset thin-film transistors," IEEE Trans. Electron Devices 57, 2330-2334 (2010).

M. Powell, "The physics of amorphous-silicon thin-film transistors," IEEE Trans. Electron Devices 36, 2753-2763 (1989).

D. Allee, L. Clark, B. Vogt, R. Shringarpure, S. Venugopal, S. Uppili, K. Kaftanoglu, H. Shivalingaiah, Z.-P. Li, J. Fernando, E. Bawolek, S. O'Rourke, "Circuit-level impact of a-Si:H thin-film-transistor degradation on effects," IEEE Trans. Electron Devices 56, 1166-1176 (2009).

J. Display Technol. (3)

J. Emerg. Technol. Comput. Syst. (1)

T.-C. Huang, K.-T. Cheng, H.-Y. Tseng, C.-P. Kung, "Reliability analysis for flexible electronics: Case study of integrated a-Si:H TFT scan driver," J. Emerg. Technol. Comput. Syst. 4, 1-23 (2008).

J. Non-Cryst. Solids (1)

N. Ibaraki, M. Kigoshi, K. Fukuda, J. Kigoshi, "Threshold voltage instability of a-Si:H TFTs in liquid crystal displays," J. Non-Cryst. Solids 115, 138-140 (1989).

SID Dig. Tech. Papers (4)

H. Lebrun, F. Maurice, J. Magarino, N. Szydlo, "AMLCD with integrated drivers made with amorphous-silicon TFTs," SID Dig. Tech. Papers 403-406 (1995).

C.-L. Lin, C.-D. Tu, M.-C. Chuang, K.-W. Chou, C.-C. Hung, "A highly stable a-Si:H TFT gate driver circuit with reducing clock duty ratio," Sid Dig. Tech. papers 1360-1362 (2010).

J.-H. Oh, J.-H. Hur, Y.-D. Son, K.-M. Kim, S.-H. Kim, E.-H. Kim, J.-W. Choi, S.-M. Hong, J.-O. Kim, B.-S. Bae, J. Jang, "2.0 inch a-Si:H TFT-LCD with low noise integrated gate driver," SID Dig. Tech. Papers 942-945 (2005).

S.-Y. Yoon, Y.-H. Jang, B. Kim, M.-D. Chun, H.-N. Cho, N.-W. Cho, C.-Y. Sohn, S.-H. Jo, C.-D. Kim, I.-J. Chung, "Highly stable integrated gate driver circuit using a-Si TFT with dual pull-down structure," SID Dig. Tech. Papers 348-351 (2006).

S. Edo, M. Wakagi, S. Komura, "“A 2.2” QVGA a-Si TFT LCD with high reliability integrated gate driver," SID Dig. Tech. Papers 1551-1552 (2006).

Other (8)

B. Kim, S.-Y. Yoon, Shift Register United States Patent 7477226 (2009).

S.-H. Moon, Shift register and driving method thereof U.S. Patent 7 532 701 (2009).

R. Huq, S. Weisbrod, Phase clocked shift register with cross connecting between stages U.S. Patent 5 434 899 (1995).

F. Maurice, H. Lebrun, N. Szydlo, U. Rossini, R. Chaudet, "High resolution projection valve with the amorphous silicon AMLCD technology," Proc. SPIE (1998) pp. 92-99.

H. Cheng, C. Huang, J. Lin, J. Kung, "The reliability of amorphous silicon thin film transistors for LCD under DC and AC stresses," Proc. Solid-State Integr. Circuit Technol. (1998) pp. 834-837.

D. Allee, L. Clark, R. Shringarpure, S. Venugopal, Z.-P. Li, E. Bawolek, "Degradation effects in a-Si:H thin film transistors and their impact on circuit performance," Proc. IRPS (2008) pp. 158-167.

Y. Kuo, Thin Film Transistors: Materials and Processes (Kluwer, 2004).

M. D. Chun, S. Y. Yoon, Y. H. Jang, K. S. Park, H. Y. Kim, B. Kim, H. N. Cho, S. C. Choi, T. W. Moon, N. W. Cho, S. H. Jo, C. Y. Sohn, C. D. Kim, I. J. Chung, "Bi-directional integrated a-Si gate driver circuit for LCD panel with RGBW quad subpixels," Proc. ASID'06 (2006) pp. 125-127.

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