Abstract

A novel voltage-programmed pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for active-matrix organic light-emitting diode (AMOLED) displays is proposed. The threshold voltage shift $(\Delta V_{T})$ of the drive TFT caused by electrical stress is compensated by an incremental gate-to-source voltage $(\Delta V_{GS})$ generated by utilizing the $\Delta V_{T}$-dependent charge transfer from the drive TFT to a TFT-based metal–insulator–semiconductor (MIS) capacitor. A second MIS capacitor is used to inject positive charge to the gate of the drive TFT to improve the OLED drive current. The non-ideality of the $\Delta V_T$-compensation, TFT overlap capacitance, programming speed, and OLED degradation are discussed. The effectiveness of the proposed pixel circuit is verified by simulation results.

© 2013 IEEE

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  1. Y. He, R. Hattori, J. Kanicki, "Four-thin film transistor pixel electrode circuits for active-matrix organic light-emitting displays," Jpn. J. Appl. Phys. 1—Reg. Papers Short Notes and Review Papers 40, 1199-1208 (2001).
  2. A. Nathan, G. R. Chaji, S. J. Ashtiani, "Driving schemes for a-Si and LTPS AMOLED displays," J. Display Technol. 1, 267-277 (2005).
  3. J.-C. Goh, C.-K. Kim, J. Jang, "A novel pixel circuit for active-matrix organic light-emitting diodes," SID Symp. Dig. Tech. Papers (2003) pp. 494-494.
  4. N. P. Papadopoulos, A. A. Hatzopoulos, D. K. Papakostas, "An improved optical feedback pixel driver circuit," IEEE Trans. Electron Devices 56, 229-235 (2009).
  5. G. R. Chaji, C. Ng, A. Nathan, A. Werner, J. Birnstock, O. Schneider, J. Blochwitz-Nimoth, "Electrical compensation of OLED luminance degradation," IEEE Electron Device Lett. 28, 1108-1110 (2007).
  6. G. R. Chaji, S. Alexander, J. M. Dionne, Y. Azizi, C. Church, J. Hamer, J. Spindler, A. Nathan, "Stable RGBW AMOLED display with OLED degradation compensation using electrical feedback," Proc. IEEE Int. Solid-State Circuits Conf. (2010) pp. 118-119.
  7. H. C. Slade, Device and material characterization and analytic modeling of amorphous silicon thin film transistors Ph.D. dissertation Dept. Electr. Eng. Univ. VtrginiaCharlottesvilleVAUSA (1997).
  8. K. S. Karim, A. Nathan, M. Hack, W. I. Milne, "Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs," IEEE Electron Device Lett. 25, 188-190 (2004).
  9. G. Wegmann, E. A. Vittoz, F. Rahali, "Charge injection in analog MOS switches," IEEE J. Solid-State Circuits 22, 1091-1097 (1987).
  10. P. Servati, Amorphous silicon TFTs for mechanically flexible electronics Ph.D. dissertation Dept. Electr. Comput. Eng. Univ. of WaterlooWaterlooONCanada (2004).
  11. A. J. Campbell, D. D. C. Bradley, D. G. Lidzey, "Space-charge limited conduction with traps in poly(phenylene vinylene) light emitting diodes," J. Appl. Phys. 82, 6326-6342 (1997).
  12. B. Geffroy, P. le Roy, C. Prat, "Organic light-emitting diode (OLED) technology: Materials, devices and display technologies," Polymer Int. 55, 572-582 (2006).
  13. P. Servati, D. Striakhilev, A. Nathan, "Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors," IEEE Trans. Electron Devices 50, 2227-2235 (2003).
  14. I. D. Parker, Y. Cao, C. Y. Yang, "Lifetime and degradation effects in polymer light-emitting diodes," J. Appl. Phys. 85, 2441-2447 (1999).
  15. S. M. Jahinuzzaman, A. Sultana, K. Sakariya, P. Servati, A. Nathan, "Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress," Appl. Phys. Lett. 87, (2005) Art. ID 023502.
  16. C. S. Chiang, J. Kanicki, K. Takechi, "Electrical instability of hydrogenated amorphous silicon thin-film transistors for active-matrix liquid-crystal displays," Jpn. J. Appl. Phys. 1—Reg. Papers Short Notes Rev.Papers 37, 4704-4710 (1998).

2009 (1)

N. P. Papadopoulos, A. A. Hatzopoulos, D. K. Papakostas, "An improved optical feedback pixel driver circuit," IEEE Trans. Electron Devices 56, 229-235 (2009).

2007 (1)

G. R. Chaji, C. Ng, A. Nathan, A. Werner, J. Birnstock, O. Schneider, J. Blochwitz-Nimoth, "Electrical compensation of OLED luminance degradation," IEEE Electron Device Lett. 28, 1108-1110 (2007).

2006 (1)

B. Geffroy, P. le Roy, C. Prat, "Organic light-emitting diode (OLED) technology: Materials, devices and display technologies," Polymer Int. 55, 572-582 (2006).

2005 (2)

A. Nathan, G. R. Chaji, S. J. Ashtiani, "Driving schemes for a-Si and LTPS AMOLED displays," J. Display Technol. 1, 267-277 (2005).

S. M. Jahinuzzaman, A. Sultana, K. Sakariya, P. Servati, A. Nathan, "Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress," Appl. Phys. Lett. 87, (2005) Art. ID 023502.

2004 (1)

K. S. Karim, A. Nathan, M. Hack, W. I. Milne, "Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs," IEEE Electron Device Lett. 25, 188-190 (2004).

2003 (1)

P. Servati, D. Striakhilev, A. Nathan, "Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors," IEEE Trans. Electron Devices 50, 2227-2235 (2003).

2001 (1)

Y. He, R. Hattori, J. Kanicki, "Four-thin film transistor pixel electrode circuits for active-matrix organic light-emitting displays," Jpn. J. Appl. Phys. 1—Reg. Papers Short Notes and Review Papers 40, 1199-1208 (2001).

1999 (1)

I. D. Parker, Y. Cao, C. Y. Yang, "Lifetime and degradation effects in polymer light-emitting diodes," J. Appl. Phys. 85, 2441-2447 (1999).

1998 (1)

C. S. Chiang, J. Kanicki, K. Takechi, "Electrical instability of hydrogenated amorphous silicon thin-film transistors for active-matrix liquid-crystal displays," Jpn. J. Appl. Phys. 1—Reg. Papers Short Notes Rev.Papers 37, 4704-4710 (1998).

1997 (1)

A. J. Campbell, D. D. C. Bradley, D. G. Lidzey, "Space-charge limited conduction with traps in poly(phenylene vinylene) light emitting diodes," J. Appl. Phys. 82, 6326-6342 (1997).

1987 (1)

G. Wegmann, E. A. Vittoz, F. Rahali, "Charge injection in analog MOS switches," IEEE J. Solid-State Circuits 22, 1091-1097 (1987).

Appl. Phys. Lett. (1)

S. M. Jahinuzzaman, A. Sultana, K. Sakariya, P. Servati, A. Nathan, "Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress," Appl. Phys. Lett. 87, (2005) Art. ID 023502.

IEEE Electron Device Lett. (2)

G. R. Chaji, C. Ng, A. Nathan, A. Werner, J. Birnstock, O. Schneider, J. Blochwitz-Nimoth, "Electrical compensation of OLED luminance degradation," IEEE Electron Device Lett. 28, 1108-1110 (2007).

K. S. Karim, A. Nathan, M. Hack, W. I. Milne, "Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs," IEEE Electron Device Lett. 25, 188-190 (2004).

IEEE J. Solid-State Circuits (1)

G. Wegmann, E. A. Vittoz, F. Rahali, "Charge injection in analog MOS switches," IEEE J. Solid-State Circuits 22, 1091-1097 (1987).

IEEE Trans. Electron Devices (2)

N. P. Papadopoulos, A. A. Hatzopoulos, D. K. Papakostas, "An improved optical feedback pixel driver circuit," IEEE Trans. Electron Devices 56, 229-235 (2009).

P. Servati, D. Striakhilev, A. Nathan, "Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors," IEEE Trans. Electron Devices 50, 2227-2235 (2003).

J. Appl. Phys. (2)

I. D. Parker, Y. Cao, C. Y. Yang, "Lifetime and degradation effects in polymer light-emitting diodes," J. Appl. Phys. 85, 2441-2447 (1999).

A. J. Campbell, D. D. C. Bradley, D. G. Lidzey, "Space-charge limited conduction with traps in poly(phenylene vinylene) light emitting diodes," J. Appl. Phys. 82, 6326-6342 (1997).

J. Display Technol. (1)

Jpn. J. Appl. Phys. 1—Reg. Papers Short Notes and Review Papers (1)

Y. He, R. Hattori, J. Kanicki, "Four-thin film transistor pixel electrode circuits for active-matrix organic light-emitting displays," Jpn. J. Appl. Phys. 1—Reg. Papers Short Notes and Review Papers 40, 1199-1208 (2001).

Jpn. J. Appl. Phys. 1—Reg. Papers Short Notes Rev.Papers (1)

C. S. Chiang, J. Kanicki, K. Takechi, "Electrical instability of hydrogenated amorphous silicon thin-film transistors for active-matrix liquid-crystal displays," Jpn. J. Appl. Phys. 1—Reg. Papers Short Notes Rev.Papers 37, 4704-4710 (1998).

Polymer Int. (1)

B. Geffroy, P. le Roy, C. Prat, "Organic light-emitting diode (OLED) technology: Materials, devices and display technologies," Polymer Int. 55, 572-582 (2006).

Other (4)

J.-C. Goh, C.-K. Kim, J. Jang, "A novel pixel circuit for active-matrix organic light-emitting diodes," SID Symp. Dig. Tech. Papers (2003) pp. 494-494.

P. Servati, Amorphous silicon TFTs for mechanically flexible electronics Ph.D. dissertation Dept. Electr. Comput. Eng. Univ. of WaterlooWaterlooONCanada (2004).

G. R. Chaji, S. Alexander, J. M. Dionne, Y. Azizi, C. Church, J. Hamer, J. Spindler, A. Nathan, "Stable RGBW AMOLED display with OLED degradation compensation using electrical feedback," Proc. IEEE Int. Solid-State Circuits Conf. (2010) pp. 118-119.

H. C. Slade, Device and material characterization and analytic modeling of amorphous silicon thin film transistors Ph.D. dissertation Dept. Electr. Eng. Univ. VtrginiaCharlottesvilleVAUSA (1997).

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