Abstract

A novel voltage-programmed pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for active-matrix organic light-emitting diode (AMOLED) displays is proposed. The threshold voltage shift $(\Delta V_{T})$ of the drive TFT caused by electrical stress is compensated by an incremental gate-to-source voltage $(\Delta V_{GS})$ generated by utilizing the $\Delta V_{T}$-dependent charge transfer from the drive TFT to a TFT-based metal–insulator–semiconductor (MIS) capacitor. A second MIS capacitor is used to inject positive charge to the gate of the drive TFT to improve the OLED drive current. The non-ideality of the $\Delta V_T$-compensation, TFT overlap capacitance, programming speed, and OLED degradation are discussed. The effectiveness of the proposed pixel circuit is verified by simulation results.

© 2013 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription