Abstract

The thick-well InGaN/GaN short period multiple quantum well solar cells (SCs) with ${{H}} _{2}$ in the GaN cap layer exhibits an improved open-circuit voltage, fill factor, and conversion efficiency ($\eta \%$) compared with those of SCs without the ramped ${{H}} _{2}$ in the GaN cap layer. The $\eta \%$ of the SC with the ramped ${{H}} _{2}$ in the GaN cap layer (0.77%) shows a 67.4% improvement compared with that of the SC without the ramped ${{H}} _{2}$ (0.46%). Furthermore, the $\eta \%$ of SC with patterned sapphire substrate (PSS) (1.36%) indicates a 76.6% improvement compared with that of SC without PSS (0.77%).

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  1. O. Jani, I. Ferguson, C. Honsberg, S. Kurtz, "Design and characterization of GaN/InGaN solar cells," Appl. Phys. Lett. 91, 132177-1-132177-3 (2007).
  2. O. Jani, C. Honsberg, A. Asghar, D. Nicoi, I. Ferguson, A. Doolittle, S. Kurtz, "Characterization and analysis of InGaN photovoltaic devices," 31st IEEE Photovoltaic Specialists Conf. (2005) pp. 37-42.
  3. H. Hamzaoui, A. S. Bouazzi, B. Rezig, "Theoretical possibilities of ${{In}}_{x}{{Ga}}_{1-x}{{N}}$ tandem PV structures," Solar Energy Mater. and Solar Cells 87, 595-603 (2005).
  4. X. Zhang, X. Wang, H. Xiao, C. Yang, J. Ran, C. Wang, Q. Hou, J. Li, "Simulation of ${{In}}_{0.65}{{Ga}}_{0.35}{{N}}$ single-junction solar cell," Jpn. J. Appl. Phys. 40, 7335-7338 (2007).
  5. C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, U. K. Mishra, "High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap," Appl. Phys. Lett. 93, 143502-143502-3 (2008).
  6. R. H. Horng, S. T. Lin, Y. L. Tsai, M. T. Chu, W. Y. Liao, M. H. Wu, R. M. Lin, Y. C. Lu, "Improved conversion efficiency of GaN/InGaN thin-film solar cells," IEEE Electron Device Lett. 30, 724-726 (2009).
  7. S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, C. Trager-Cowan, F. Sweeney, "Compositional pulling effects in ${{In}}_{x}{{Ga}}_{1-x}/{{GaN}}$ layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study," Phys. Rev. B 64, 205311-205311-5 (2001).
  8. K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, R. F. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki, "The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization," MRS Internet J. Nitride Semicond. Res. 2, U3-U12 (1997).
  9. S. Pereira, M. R. Correia, E. Pereira, K. P. ODonnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, C. J. Deatcher, "Strain and composition distributions in Wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping," Appl. Phys. Lett. 80, 3913-3915 (2002).
  10. K. W. J. Barnham, G. A. Duggan, "A new approach to high-efficiency multi-band-gap solar cells," Jpn. J. Appl. Phys. 67, 3490-3493 (1990).
  11. J. K. Sheu, C. C. Yang, S. J. Tu, H. K. Chang, M. L. Lee, W. C. Lai, L. C. Peng, "Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers," IEEE Electron Device Lett. 30, 225-227 (2009).
  12. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu, "Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact," IEEE Photon. Technol. Lett. 16, 1002-1004 (2004).
  13. C. A. Tran, R. F. Karlicek Jr., M. Schurman, A. Osinsky, V. Merai, Y. Li, I. Eliashevich, M. G. Brown, J. Nering, I. Ferguson, R. Stall, J. Cryst. Growth 195, 397-400 (1998).
  14. M. I. Richard, M. J. Highland, T. T. Fister, A. Munkholm, J. Mei, S. K. Streiffer, C. Thompson, P. H. Fuoss, G. B. Stephenson, "In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN," Appl. Phys. Lett. 96, 051911-051911-3 (2010).
  15. B. J. Spencer, P. W. Voorhees, J. Tersoff, "Morphological instability theory for strained alloy film growth: The effect of compositional stresses and species-dependent surface mobilities on ripple formation during epitaxial film deposition," Phys. Rev. B 64, 235318 (2001).
  16. M. T. Chu, W. Y. Liao, R. H. Horng, T. Y. Tsai, T. B. Wu, S. P. Liu, M. H. Wu, R.-M. Lin, "Growth and characterization of p-InGaN/i-InGaN/n-GaN double-heterojunction solar cells on patterned sapphire substrates," IEEE Electron Device Lett. 32, 922-924 (2011).
  17. M. T. Chu, W. Y. Liao, R. H. Horng, T. Y. Tsai, T. B. Wu, S. P. Liu, M. H. Wu, R. M. Lin, "Growth and characterization of p-InGaN/i-InGaN/n-GaN double-heterojunction solar cells on patterned sapphire substrates," IEEE Electron Device Lett. 32, 922-924 (2011).

2011

M. T. Chu, W. Y. Liao, R. H. Horng, T. Y. Tsai, T. B. Wu, S. P. Liu, M. H. Wu, R.-M. Lin, "Growth and characterization of p-InGaN/i-InGaN/n-GaN double-heterojunction solar cells on patterned sapphire substrates," IEEE Electron Device Lett. 32, 922-924 (2011).

M. T. Chu, W. Y. Liao, R. H. Horng, T. Y. Tsai, T. B. Wu, S. P. Liu, M. H. Wu, R. M. Lin, "Growth and characterization of p-InGaN/i-InGaN/n-GaN double-heterojunction solar cells on patterned sapphire substrates," IEEE Electron Device Lett. 32, 922-924 (2011).

2010

M. I. Richard, M. J. Highland, T. T. Fister, A. Munkholm, J. Mei, S. K. Streiffer, C. Thompson, P. H. Fuoss, G. B. Stephenson, "In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN," Appl. Phys. Lett. 96, 051911-051911-3 (2010).

2009

J. K. Sheu, C. C. Yang, S. J. Tu, H. K. Chang, M. L. Lee, W. C. Lai, L. C. Peng, "Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers," IEEE Electron Device Lett. 30, 225-227 (2009).

R. H. Horng, S. T. Lin, Y. L. Tsai, M. T. Chu, W. Y. Liao, M. H. Wu, R. M. Lin, Y. C. Lu, "Improved conversion efficiency of GaN/InGaN thin-film solar cells," IEEE Electron Device Lett. 30, 724-726 (2009).

2008

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, U. K. Mishra, "High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap," Appl. Phys. Lett. 93, 143502-143502-3 (2008).

2007

X. Zhang, X. Wang, H. Xiao, C. Yang, J. Ran, C. Wang, Q. Hou, J. Li, "Simulation of ${{In}}_{0.65}{{Ga}}_{0.35}{{N}}$ single-junction solar cell," Jpn. J. Appl. Phys. 40, 7335-7338 (2007).

O. Jani, I. Ferguson, C. Honsberg, S. Kurtz, "Design and characterization of GaN/InGaN solar cells," Appl. Phys. Lett. 91, 132177-1-132177-3 (2007).

2005

H. Hamzaoui, A. S. Bouazzi, B. Rezig, "Theoretical possibilities of ${{In}}_{x}{{Ga}}_{1-x}{{N}}$ tandem PV structures," Solar Energy Mater. and Solar Cells 87, 595-603 (2005).

2004

S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu, "Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact," IEEE Photon. Technol. Lett. 16, 1002-1004 (2004).

2002

S. Pereira, M. R. Correia, E. Pereira, K. P. ODonnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, C. J. Deatcher, "Strain and composition distributions in Wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping," Appl. Phys. Lett. 80, 3913-3915 (2002).

2001

S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, C. Trager-Cowan, F. Sweeney, "Compositional pulling effects in ${{In}}_{x}{{Ga}}_{1-x}/{{GaN}}$ layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study," Phys. Rev. B 64, 205311-205311-5 (2001).

B. J. Spencer, P. W. Voorhees, J. Tersoff, "Morphological instability theory for strained alloy film growth: The effect of compositional stresses and species-dependent surface mobilities on ripple formation during epitaxial film deposition," Phys. Rev. B 64, 235318 (2001).

1998

C. A. Tran, R. F. Karlicek Jr., M. Schurman, A. Osinsky, V. Merai, Y. Li, I. Eliashevich, M. G. Brown, J. Nering, I. Ferguson, R. Stall, J. Cryst. Growth 195, 397-400 (1998).

1997

K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, R. F. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki, "The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization," MRS Internet J. Nitride Semicond. Res. 2, U3-U12 (1997).

1990

K. W. J. Barnham, G. A. Duggan, "A new approach to high-efficiency multi-band-gap solar cells," Jpn. J. Appl. Phys. 67, 3490-3493 (1990).

Appl. Phys. Lett.

O. Jani, I. Ferguson, C. Honsberg, S. Kurtz, "Design and characterization of GaN/InGaN solar cells," Appl. Phys. Lett. 91, 132177-1-132177-3 (2007).

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, U. K. Mishra, "High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap," Appl. Phys. Lett. 93, 143502-143502-3 (2008).

S. Pereira, M. R. Correia, E. Pereira, K. P. ODonnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, C. J. Deatcher, "Strain and composition distributions in Wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping," Appl. Phys. Lett. 80, 3913-3915 (2002).

M. I. Richard, M. J. Highland, T. T. Fister, A. Munkholm, J. Mei, S. K. Streiffer, C. Thompson, P. H. Fuoss, G. B. Stephenson, "In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN," Appl. Phys. Lett. 96, 051911-051911-3 (2010).

IEEE Electron Device Lett.

J. K. Sheu, C. C. Yang, S. J. Tu, H. K. Chang, M. L. Lee, W. C. Lai, L. C. Peng, "Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers," IEEE Electron Device Lett. 30, 225-227 (2009).

M. T. Chu, W. Y. Liao, R. H. Horng, T. Y. Tsai, T. B. Wu, S. P. Liu, M. H. Wu, R.-M. Lin, "Growth and characterization of p-InGaN/i-InGaN/n-GaN double-heterojunction solar cells on patterned sapphire substrates," IEEE Electron Device Lett. 32, 922-924 (2011).

M. T. Chu, W. Y. Liao, R. H. Horng, T. Y. Tsai, T. B. Wu, S. P. Liu, M. H. Wu, R. M. Lin, "Growth and characterization of p-InGaN/i-InGaN/n-GaN double-heterojunction solar cells on patterned sapphire substrates," IEEE Electron Device Lett. 32, 922-924 (2011).

IEEE Electron Device Lett.

R. H. Horng, S. T. Lin, Y. L. Tsai, M. T. Chu, W. Y. Liao, M. H. Wu, R. M. Lin, Y. C. Lu, "Improved conversion efficiency of GaN/InGaN thin-film solar cells," IEEE Electron Device Lett. 30, 724-726 (2009).

IEEE Photon. Technol. Lett.

S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu, "Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact," IEEE Photon. Technol. Lett. 16, 1002-1004 (2004).

J. Cryst. Growth

C. A. Tran, R. F. Karlicek Jr., M. Schurman, A. Osinsky, V. Merai, Y. Li, I. Eliashevich, M. G. Brown, J. Nering, I. Ferguson, R. Stall, J. Cryst. Growth 195, 397-400 (1998).

Jpn. J. Appl. Phys.

X. Zhang, X. Wang, H. Xiao, C. Yang, J. Ran, C. Wang, Q. Hou, J. Li, "Simulation of ${{In}}_{0.65}{{Ga}}_{0.35}{{N}}$ single-junction solar cell," Jpn. J. Appl. Phys. 40, 7335-7338 (2007).

Jpn. J. Appl. Phys.

K. W. J. Barnham, G. A. Duggan, "A new approach to high-efficiency multi-band-gap solar cells," Jpn. J. Appl. Phys. 67, 3490-3493 (1990).

MRS Internet J. Nitride Semicond. Res.

K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, R. F. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki, "The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization," MRS Internet J. Nitride Semicond. Res. 2, U3-U12 (1997).

Phys. Rev. B

S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, C. Trager-Cowan, F. Sweeney, "Compositional pulling effects in ${{In}}_{x}{{Ga}}_{1-x}/{{GaN}}$ layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study," Phys. Rev. B 64, 205311-205311-5 (2001).

Phys. Rev. B

B. J. Spencer, P. W. Voorhees, J. Tersoff, "Morphological instability theory for strained alloy film growth: The effect of compositional stresses and species-dependent surface mobilities on ripple formation during epitaxial film deposition," Phys. Rev. B 64, 235318 (2001).

Solar Energy Mater. and Solar Cells

H. Hamzaoui, A. S. Bouazzi, B. Rezig, "Theoretical possibilities of ${{In}}_{x}{{Ga}}_{1-x}{{N}}$ tandem PV structures," Solar Energy Mater. and Solar Cells 87, 595-603 (2005).

Other

O. Jani, C. Honsberg, A. Asghar, D. Nicoi, I. Ferguson, A. Doolittle, S. Kurtz, "Characterization and analysis of InGaN photovoltaic devices," 31st IEEE Photovoltaic Specialists Conf. (2005) pp. 37-42.

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