Abstract

This paper characterizes transparent current mirrors with n-type amorphous gallium–indium–zinc–oxide (a-GIZO) thin-film transistors (TFTs). Two-TFT current mirrors with different mirroring ratios and a cascode topology are considered. A neural model is developed based on the measured data of the TFTs and is implemented in Verilog-A; then it is used to simulate the circuits with Cadence Virtuoso Spectre simulator. The simulation outcomes are validated with the fabricated circuit response. These results show that the neural network can model TFT accurately, as well as the current mirroring ability of the TFTs.

© 2013 IEEE

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  1. J. Y. Kwon, K. S. Son, J. S. Jung, T. S. Kim, M. K. Ryu, K. B. Park, B. W. Yoo, J. W. Kim, Y. G. Lee, K. C. Park, S. Y. Lee, J. M. Kim, "Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display," IEEE Electron Device Lett. 29, 1309-1311 (2008).
  2. N. Gong, C. Park, J. Lee, I. Jeong, H. Han, J. Hwang, J. Park, K. Park, H. Jeong, Y. Ha, Y. Hwang, "58.2: Distinguished paper: Implementation of 240 hz 55-inch ultra definition LCD driven by a-IGZO semiconductor TFT with copper signal lines," SID Symp. Dig. Tech. Papers (2012) pp. 784-787.
  3. P. Barquinha, L. Pereira, G. Gonalves, R. Martins, D. Kuer, M. Kosec, E. Fortunato, "Performance and stability of low temperature transparent thin-film transistors using amorphous multicomponent dielectrics," J. Electrochem. Soc. 156, H824-H831 (2009).
  4. S. Sambandan, A. Kumar, K. Sakariya, A. Nathan, "Analogue circuit building blocks with amorphous silicon thin film transistors," Electron. Lett. 41, 314-315 (2005).
  5. H. Marien, M. Steyaert, E. van Veenendaal, P. Heremans, "A fully integrated ADC in organic thin-film transistor technology on flexible plastic foil," IEEE J. Solid-state Circuits 46, 276-284 (2011).
  6. E. Fortunato, P. Barquinha, R. Martins, "Oxide semiconductor thin-film transistors: A review of recent advances," Adv. Mater. 24, 2945-2986 (2012).
  7. B. Kim, S. C. Choi, J. S. Lee, S. J. Kim, Y. H. Jang, S. Y. Yoon, C. D. Kim, M. K. Han, "A depletion-mode In-Ga-Zn-O thin-film transistor shift register embedded with a full-swing level shifter," IEEE Electron Device Lett. 58, 3012-3017 (2011).
  8. D. Raiteri, "A 6 b 10 ms/s current-steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving ${\rm SFDR} > 30$ dB up to 300 kHz," IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers (ISSCC'2012) (2012) pp. 314-316.
  9. J. Zhang, X. Li, J. Lu, Z. Ye, L. Gong, P. Wu, J. Huang, Y. Zhang, L. Chen, B. Zhao, "Performance and stability of amorphous ingazno thin film transistors with a designed device structure," J. of Appl. Phys. 110, 084 509-084 509 (2011).
  10. P. Meijer, "Table models for device modelling," IEEE Int. Symp. Circuits Syst. (1988) pp. 2593-2596.
  11. V. B. Litovski, J. I. Radjenović, Ž. M. Mrčarica, S. L. Milenković, "MOS transistor modelling using neural network," Electron. Lett. 28, 1766-1768 (1992).
  12. A. Nathan, A. Kumar, K. Sakariya, P. Servati, K. Karim, D. Striakhilev, A. Sazonov, "Amorphous silicon back-plane electronics for OLED displays," IEEE J. Sel. Topics Quantum Electron. 10, 58-69 (2004).
  13. L. E. Feller, Zinc tin oxide thin-film transistor current mirror circuits Master's thesis Oregon State Univ.PortlandORUnited States (2011).
  14. K. Hornik, M. Stinchcombe, H. White, "Multilayer feedforward networks are universal approximators," Neural Netw. 2, 359-366 (1989).
  15. P. Barquinha, L. Pereira, G. Goncalves, R. Martins, E. Fortunato, "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc. 156, H161-H168 (2009).
  16. G. Bernardo, G. Goncalves, P. Barquinha, Q. Ferreira, G. Brotas, L. Pereira, A. Charas, J. Morgado, R. Martins, E. Fortunato, "Polymer light-emitting diodes with amorphous indium-zinc oxide anodes deposited at room temperature," Synth. Metals 159, 1112-1115 (2009).
  17. P. Barquinha, L. Pereira, G. Goncalves, D. Kuscer, M. Kosec, A. Vila, A. Olziersky, J. R. Morante, R. Martins, E. Fortunato, "Low-temperature sputtered mixtures of high- $\kappa$ and high bandgap dielectrics for GIZO TFTs," J. Soc. Inf. Display 18, 762-772 (2010).
  18. A. Olziersky, P. Barquinha, A. Vila, L. Pereira, G. Goncalves, E. Fortunato, R. Martins, J. R. Morante, "Insight on the SU-8 resist as passivation layer for transparent Ga $_{2}$ O $_{3}$ -In $_{2}$ O $_{3}$ -ZnO thin-film transistors," J. Appl. Phys. 108, 064505-064505-7 (2010).

2012 (1)

E. Fortunato, P. Barquinha, R. Martins, "Oxide semiconductor thin-film transistors: A review of recent advances," Adv. Mater. 24, 2945-2986 (2012).

2011 (3)

B. Kim, S. C. Choi, J. S. Lee, S. J. Kim, Y. H. Jang, S. Y. Yoon, C. D. Kim, M. K. Han, "A depletion-mode In-Ga-Zn-O thin-film transistor shift register embedded with a full-swing level shifter," IEEE Electron Device Lett. 58, 3012-3017 (2011).

J. Zhang, X. Li, J. Lu, Z. Ye, L. Gong, P. Wu, J. Huang, Y. Zhang, L. Chen, B. Zhao, "Performance and stability of amorphous ingazno thin film transistors with a designed device structure," J. of Appl. Phys. 110, 084 509-084 509 (2011).

H. Marien, M. Steyaert, E. van Veenendaal, P. Heremans, "A fully integrated ADC in organic thin-film transistor technology on flexible plastic foil," IEEE J. Solid-state Circuits 46, 276-284 (2011).

2010 (2)

P. Barquinha, L. Pereira, G. Goncalves, D. Kuscer, M. Kosec, A. Vila, A. Olziersky, J. R. Morante, R. Martins, E. Fortunato, "Low-temperature sputtered mixtures of high- $\kappa$ and high bandgap dielectrics for GIZO TFTs," J. Soc. Inf. Display 18, 762-772 (2010).

A. Olziersky, P. Barquinha, A. Vila, L. Pereira, G. Goncalves, E. Fortunato, R. Martins, J. R. Morante, "Insight on the SU-8 resist as passivation layer for transparent Ga $_{2}$ O $_{3}$ -In $_{2}$ O $_{3}$ -ZnO thin-film transistors," J. Appl. Phys. 108, 064505-064505-7 (2010).

2009 (3)

P. Barquinha, L. Pereira, G. Goncalves, R. Martins, E. Fortunato, "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc. 156, H161-H168 (2009).

G. Bernardo, G. Goncalves, P. Barquinha, Q. Ferreira, G. Brotas, L. Pereira, A. Charas, J. Morgado, R. Martins, E. Fortunato, "Polymer light-emitting diodes with amorphous indium-zinc oxide anodes deposited at room temperature," Synth. Metals 159, 1112-1115 (2009).

P. Barquinha, L. Pereira, G. Gonalves, R. Martins, D. Kuer, M. Kosec, E. Fortunato, "Performance and stability of low temperature transparent thin-film transistors using amorphous multicomponent dielectrics," J. Electrochem. Soc. 156, H824-H831 (2009).

2008 (1)

J. Y. Kwon, K. S. Son, J. S. Jung, T. S. Kim, M. K. Ryu, K. B. Park, B. W. Yoo, J. W. Kim, Y. G. Lee, K. C. Park, S. Y. Lee, J. M. Kim, "Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display," IEEE Electron Device Lett. 29, 1309-1311 (2008).

2005 (1)

S. Sambandan, A. Kumar, K. Sakariya, A. Nathan, "Analogue circuit building blocks with amorphous silicon thin film transistors," Electron. Lett. 41, 314-315 (2005).

2004 (1)

A. Nathan, A. Kumar, K. Sakariya, P. Servati, K. Karim, D. Striakhilev, A. Sazonov, "Amorphous silicon back-plane electronics for OLED displays," IEEE J. Sel. Topics Quantum Electron. 10, 58-69 (2004).

1992 (1)

V. B. Litovski, J. I. Radjenović, Ž. M. Mrčarica, S. L. Milenković, "MOS transistor modelling using neural network," Electron. Lett. 28, 1766-1768 (1992).

1989 (1)

K. Hornik, M. Stinchcombe, H. White, "Multilayer feedforward networks are universal approximators," Neural Netw. 2, 359-366 (1989).

Adv. Mater. (1)

E. Fortunato, P. Barquinha, R. Martins, "Oxide semiconductor thin-film transistors: A review of recent advances," Adv. Mater. 24, 2945-2986 (2012).

Electron. Lett. (2)

S. Sambandan, A. Kumar, K. Sakariya, A. Nathan, "Analogue circuit building blocks with amorphous silicon thin film transistors," Electron. Lett. 41, 314-315 (2005).

V. B. Litovski, J. I. Radjenović, Ž. M. Mrčarica, S. L. Milenković, "MOS transistor modelling using neural network," Electron. Lett. 28, 1766-1768 (1992).

IEEE Electron Device Lett. (2)

J. Y. Kwon, K. S. Son, J. S. Jung, T. S. Kim, M. K. Ryu, K. B. Park, B. W. Yoo, J. W. Kim, Y. G. Lee, K. C. Park, S. Y. Lee, J. M. Kim, "Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display," IEEE Electron Device Lett. 29, 1309-1311 (2008).

B. Kim, S. C. Choi, J. S. Lee, S. J. Kim, Y. H. Jang, S. Y. Yoon, C. D. Kim, M. K. Han, "A depletion-mode In-Ga-Zn-O thin-film transistor shift register embedded with a full-swing level shifter," IEEE Electron Device Lett. 58, 3012-3017 (2011).

IEEE J. Sel. Topics Quantum Electron. (1)

A. Nathan, A. Kumar, K. Sakariya, P. Servati, K. Karim, D. Striakhilev, A. Sazonov, "Amorphous silicon back-plane electronics for OLED displays," IEEE J. Sel. Topics Quantum Electron. 10, 58-69 (2004).

IEEE J. Solid-state Circuits (1)

H. Marien, M. Steyaert, E. van Veenendaal, P. Heremans, "A fully integrated ADC in organic thin-film transistor technology on flexible plastic foil," IEEE J. Solid-state Circuits 46, 276-284 (2011).

J. Appl. Phys. (1)

A. Olziersky, P. Barquinha, A. Vila, L. Pereira, G. Goncalves, E. Fortunato, R. Martins, J. R. Morante, "Insight on the SU-8 resist as passivation layer for transparent Ga $_{2}$ O $_{3}$ -In $_{2}$ O $_{3}$ -ZnO thin-film transistors," J. Appl. Phys. 108, 064505-064505-7 (2010).

J. Electrochem. Soc. (2)

P. Barquinha, L. Pereira, G. Goncalves, R. Martins, E. Fortunato, "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc. 156, H161-H168 (2009).

P. Barquinha, L. Pereira, G. Gonalves, R. Martins, D. Kuer, M. Kosec, E. Fortunato, "Performance and stability of low temperature transparent thin-film transistors using amorphous multicomponent dielectrics," J. Electrochem. Soc. 156, H824-H831 (2009).

J. of Appl. Phys. (1)

J. Zhang, X. Li, J. Lu, Z. Ye, L. Gong, P. Wu, J. Huang, Y. Zhang, L. Chen, B. Zhao, "Performance and stability of amorphous ingazno thin film transistors with a designed device structure," J. of Appl. Phys. 110, 084 509-084 509 (2011).

J. Soc. Inf. Display (1)

P. Barquinha, L. Pereira, G. Goncalves, D. Kuscer, M. Kosec, A. Vila, A. Olziersky, J. R. Morante, R. Martins, E. Fortunato, "Low-temperature sputtered mixtures of high- $\kappa$ and high bandgap dielectrics for GIZO TFTs," J. Soc. Inf. Display 18, 762-772 (2010).

Neural Netw. (1)

K. Hornik, M. Stinchcombe, H. White, "Multilayer feedforward networks are universal approximators," Neural Netw. 2, 359-366 (1989).

Synth. Metals (1)

G. Bernardo, G. Goncalves, P. Barquinha, Q. Ferreira, G. Brotas, L. Pereira, A. Charas, J. Morgado, R. Martins, E. Fortunato, "Polymer light-emitting diodes with amorphous indium-zinc oxide anodes deposited at room temperature," Synth. Metals 159, 1112-1115 (2009).

Other (4)

L. E. Feller, Zinc tin oxide thin-film transistor current mirror circuits Master's thesis Oregon State Univ.PortlandORUnited States (2011).

P. Meijer, "Table models for device modelling," IEEE Int. Symp. Circuits Syst. (1988) pp. 2593-2596.

D. Raiteri, "A 6 b 10 ms/s current-steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving ${\rm SFDR} > 30$ dB up to 300 kHz," IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers (ISSCC'2012) (2012) pp. 314-316.

N. Gong, C. Park, J. Lee, I. Jeong, H. Han, J. Hwang, J. Park, K. Park, H. Jeong, Y. Ha, Y. Hwang, "58.2: Distinguished paper: Implementation of 240 hz 55-inch ultra definition LCD driven by a-IGZO semiconductor TFT with copper signal lines," SID Symp. Dig. Tech. Papers (2012) pp. 784-787.

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