Abstract

In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with $\sim$30 nm thick ZTO channel layer deposited at a substrate temperature of 400 $^{\circ}{{C}}$ and 300 $^{\circ}{{C}}$ exhibited, respectively, a saturation mobility of $\sim {{2.9}}\ {{cm}}^{2}\cdot{{V}}^{-1}\cdot{{s}}^{-1}$ and 1.45 ${{cm}}^{2}\cdot{{V}}^{-1}\cdot{{s}}^{-1}$; ${V}_{\rm ON}$ voltage of $\sim$0.15 V, and 0.2 V; a sub-threshold swing of $\sim$400 mV/dec and 500 mV/dec; ON/OFF ratio at the onset of hard saturation current of $\sim {{3.5}}\times {{10}}^{5}$ and ${{6}}\times {{10}}^{3}$, for a drain to source voltage of 10 V (close to or below the gate to source voltage). This indicates that the substrate temperature is relevant in determining the devices' electronic performances.

© 2013 IEEE

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