Abstract

In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with $\sim$30 nm thick ZTO channel layer deposited at a substrate temperature of 400 $^{\circ}{{C}}$ and 300 $^{\circ}{{C}}$ exhibited, respectively, a saturation mobility of $\sim {{2.9}}\ {{cm}}^{2}\cdot{{V}}^{-1}\cdot{{s}}^{-1}$ and 1.45 ${{cm}}^{2}\cdot{{V}}^{-1}\cdot{{s}}^{-1}$; ${V}_{\rm ON}$ voltage of $\sim$0.15 V, and 0.2 V; a sub-threshold swing of $\sim$400 mV/dec and 500 mV/dec; ON/OFF ratio at the onset of hard saturation current of $\sim {{3.5}}\times {{10}}^{5}$ and ${{6}}\times {{10}}^{3}$, for a drain to source voltage of 10 V (close to or below the gate to source voltage). This indicates that the substrate temperature is relevant in determining the devices' electronic performances.

© 2013 IEEE

PDF Article

References

  • View by:
  • |
  • |

  1. P. Barquinha, R. Martins, L. Pereira, E. Fortunato, Transparent Semiconductors: From Materials to Devices (Wiley, 2012).
  2. E. Fortunato, P. Barquinha, R. Martins, "Oxide semiconductor thin film transistors: A review of recent advances," Adv. Mater. 24, 2945-2986 (2012).
  3. P. Barquinha, R. Martins, E. Fortunato, GaN and ZnO-based Thin Film, Bulk and Nanostructured Materials and Devices (Springer-Verlag, 2012) pp. 435-473.
  4. E. Fortunato, A. Gonçalves, A. Pimentel, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, R. Martins, "Zinc oxide, a multifunctional material: From material to device applications," Appl. Phys. A 96, 197-205 (2009).
  5. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).
  6. P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, "The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs," Electrochem. Solid State Lett. 11, H248-H251 (2008).
  7. K. Abe, K. Takahashi, A. Sato, H. Kumomi, K. Nomura, T. Kamiya, J. Kanicki, H. Hosono, "Amorphous In-Ga-Zn-O dual-gate TFTs: Current-voltage characteristics and electrical stress instabilities," IEEE Trans. Electron Devices 59, 1928-1935 (2012).
  8. R. Martins, L. Raniero, L. Pereira, D. Costa, H. Aguas, S. Pereira, L. Silva, A. Goncalves, I. Ferreira, E. Fortunato, "Nanostructured silicon and its application to solar cells, position sensors and thin film transistors," Philos. Mag. 89, 2699-2721 (2009).
  9. D. H. Lee, Y. J. Chang, G. S. Herman, C. H. Chang, "A general route to printable high-mobility transparent amorphous oxide semiconductors," Adv. Mater. 19, 843-847 (2007).
  10. S. J. Seo, C. G. Choi, Y. H. Hwang, B. S. Bae, "High performance solution-processed amorphous zinc tin oxide thin film transistor," J. Phys. D, Appl. Phys. 42, 035106 (2009).
  11. H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler, "High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer," Appl. Phys. Lett. 86, 013503 (2005).
  12. P. Görrn, M. Sander, J. Meyer, M. Kröger, E. Becker, H. H. Johannes, W. Kowalsky, T. Riedl, "Towards see-through displays: Fully transparent thin-film transistors driving transparent organic light-emitting diodes," Adv. Mater. 18, 738-741 (2006).
  13. D. Kim, Y. Jeong, K. Song, S. K. Park, G. Z. Cao, J. Moon, "Ink-jet printed zinc tin oxide thin-film transistors," Langmuir 25, 11149-11154 (2009).
  14. P. K. Nayak, J. V. Pinto, G. Gonçalves, R. Martins, E. Fortunato, "Environmental, optical, and electrical stability study of solution-processed zinc-tin-oxide thin-film transistors," J. Dis. Tech 7, 640-643 (2011).
  15. A. Bashir, P. H. Wöbkenberg, J. Smith, J. M. Ball, G. Adamopoulos, D. D. C. Bradley, T. D. Anthopoulos, "High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere," Adv. Mater. 21, 2226-2231 (2009).
  16. G. Adamopoulos, S. Thomas, D. D. C. Bradley, M. A. McLachlan, T. D. Anthopoulos, "Low-voltage ZnO thin-film transistors based on ${\hbox{Y}}_{2}{\hbox{O}}_{3}$ and ${\hbox{Al}}_{2}{\hbox{O}}_{3}$ high-k dielectrics deposited by spray pyrolysis in air," Appl. Phys. Lett. 98, 123503-1-123503-3 (2011).
  17. P. H. Wöbkenberg, T. Ishwara, J. Nelson, D. D. C. Bradley, S. A. Haque, T. D. Anthopoulos, "${\hbox{TiO}}_{2}$ thin-film transistors fabricated by spray pyrolysis," Appl. Phys. Lett. 96, 082116-1-082116-3 (2010).
  18. J. H. Park, W. J. Choi, J. Y. Oh, S. S. Chael, W. S. Jang, S. J. Lee, K. M. Song, H. K. Baik, "Low-temperature, aqueous-solution-processed zinc tin oxide thin film transistor," Jn. J. App. Phys. 50, 07020-1-07020-3 (2011).
  19. K. Okamura, D. Nikolova, N. Mechau, H. Hahn, "Appropriate choice of channel ratio in thin-film transistors for the exact determination of field-effect mobility," Appl. Phys. Lett. 94, 183503-1-183503-3 (2009).
  20. M. G. Kim, M. G. Kanatzidis, A. Facchetti, T. J. Marks, "Low-temperature, high-performances solution-processed metal oxide thin-film transistors formed by a ‘sol-gel-chip’ process," Nature Mater. 10, 45-50 (2011).
  21. Y. Ha, S. Jeong, J. Wu, M. G. Kim, V. P. Dravid, A. Facchetti, T. J. Marks, "Flexible low-voltage organic thin-film transistors enabled by low-temperature, ambient solution-processable inorganic/organic hybrid gate dielectrics," J. Amer. Chem. Soc. 132, 17426-17434 (2010).
  22. S. Jeon, S. E. Ahn, I. Song, C. J. Kim, U. I. Chung, E. Lee, I. Yoo, A. Nathan, S. Lee, J. Robertson, K. Kim, "Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays," Nature Mater. 11, 301-305 (2012).
  23. P. Barquinha, E. Fortunato, A. Goncalves, A. Pimentel, A. Marques, L. Pereira, R. Martins, "Influence of time, light and temperature on the electrical properties of zinc oxide TFTs," Supperlattices and Microstructures 39, 319-327 (2006).
  24. R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Goncalves, E. Fortunato, "Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors," J. Appl. Phys. 10, 044505 (2007).
  25. A. Patterson, "The Scherrer formula for X-ray particle size determination," Phys. Rev. 56, 978-982 (1939).
  26. M. M. Bagheri-Mohagheghi, M. Shokooh-Saremi, "Investigations on the physical properties of the ${\hbox{SnO}}_{2}-{\rm ZnO}$ transparent conducting binary—Binary system deposited by spray pyrolysis technique," Thin Solid Films 441, 238-242 (2003).
  27. G. Adamopoulos, A. Bashir, W. P. Gillin, S. Georgakopoulos, M. Shkunov, M. A. Baklar, N. Stingelin, D. D. C. Bradley, T. D. Anthopoulos, "Structural and electrical characterization of ZnO films grown by spray pyrolysis and their application in thin film transistors," Adv. Funct. Mater 21, 525-531 (2011).
  28. W. K. Choi, H. Sung, K. H. Kim, J. S. Cho, S. C. Choi, H.-J. Jung, S. K. Koh, C. M. Lee, K. Jeong, "Oxidation process from SnO to ${\hbox{SnO}}_{2}$," J. Mater. Sci. Lett. 16, 1551-1554 (1997).
  29. E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, S. H. K. Park, C. S. Hwang, R. Martins, "Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing," Appl. Phys. Lett. 97, (2010) Article Number: 052105.
  30. M. M. Bagheri-Mohagheghi, M. S. Saremi, "The influence of Al doping on the electrical, optical and structural properties of ${\hbox{SnO}}_{2}$ transparent conducting films deposited by the spray pyrolysis technique," J. Phys. D: Appl. Phys. 37, 1248-1253 (2004).
  31. I. Baia, M. Quintela, L. Mendes, P. Nunes, R. Martins, "Performances exhibited by large area ITO layers produced by rf magnetron sputtering," Thin Solid Films 337, 171-175 (1999).
  32. G. Goncalves, E. Elangovan, P. Barquinha, L. Pereira, R. Martins, E. Fortunato, "Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films," Thin Solid Films 515, 8562-8566 (2007).
  33. R. Martins, E. Fortunato, P. Nunes, I. Ferreira, A. Marques, M. Bender, N. Katsarakis, V. Cimalla, G. Kiriakidis, "Zinc oxide as an ozone sensor," J. Appl. Phys. 96, 1398-1408 (2004).
  34. P. Barquinha, L. Pereira, G. Goncalves, D. Kuscer, M. Kosec, A. Vila, A. Olziersky, J. Morante, R. Martins, E. Fortunato, "Low-temperature sputtered mixtures of high-kappa and high bandgap dielectrics for GIZO TFTs," J. Soc. Inf. Display 18, 762-772 (2010).
  35. L. Pereira, P. Barquinha, E. Fortunato, R. Martins, D. Kang, C. J. Kim, H. Lim, I. Song, Y. Park, "High k dielectrics for low temperature electronics," Thin Solid Films 516, 1544-1548 (2008).

2012 (3)

E. Fortunato, P. Barquinha, R. Martins, "Oxide semiconductor thin film transistors: A review of recent advances," Adv. Mater. 24, 2945-2986 (2012).

K. Abe, K. Takahashi, A. Sato, H. Kumomi, K. Nomura, T. Kamiya, J. Kanicki, H. Hosono, "Amorphous In-Ga-Zn-O dual-gate TFTs: Current-voltage characteristics and electrical stress instabilities," IEEE Trans. Electron Devices 59, 1928-1935 (2012).

S. Jeon, S. E. Ahn, I. Song, C. J. Kim, U. I. Chung, E. Lee, I. Yoo, A. Nathan, S. Lee, J. Robertson, K. Kim, "Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays," Nature Mater. 11, 301-305 (2012).

2011 (5)

G. Adamopoulos, A. Bashir, W. P. Gillin, S. Georgakopoulos, M. Shkunov, M. A. Baklar, N. Stingelin, D. D. C. Bradley, T. D. Anthopoulos, "Structural and electrical characterization of ZnO films grown by spray pyrolysis and their application in thin film transistors," Adv. Funct. Mater 21, 525-531 (2011).

P. K. Nayak, J. V. Pinto, G. Gonçalves, R. Martins, E. Fortunato, "Environmental, optical, and electrical stability study of solution-processed zinc-tin-oxide thin-film transistors," J. Dis. Tech 7, 640-643 (2011).

G. Adamopoulos, S. Thomas, D. D. C. Bradley, M. A. McLachlan, T. D. Anthopoulos, "Low-voltage ZnO thin-film transistors based on ${\hbox{Y}}_{2}{\hbox{O}}_{3}$ and ${\hbox{Al}}_{2}{\hbox{O}}_{3}$ high-k dielectrics deposited by spray pyrolysis in air," Appl. Phys. Lett. 98, 123503-1-123503-3 (2011).

J. H. Park, W. J. Choi, J. Y. Oh, S. S. Chael, W. S. Jang, S. J. Lee, K. M. Song, H. K. Baik, "Low-temperature, aqueous-solution-processed zinc tin oxide thin film transistor," Jn. J. App. Phys. 50, 07020-1-07020-3 (2011).

M. G. Kim, M. G. Kanatzidis, A. Facchetti, T. J. Marks, "Low-temperature, high-performances solution-processed metal oxide thin-film transistors formed by a ‘sol-gel-chip’ process," Nature Mater. 10, 45-50 (2011).

2010 (4)

Y. Ha, S. Jeong, J. Wu, M. G. Kim, V. P. Dravid, A. Facchetti, T. J. Marks, "Flexible low-voltage organic thin-film transistors enabled by low-temperature, ambient solution-processable inorganic/organic hybrid gate dielectrics," J. Amer. Chem. Soc. 132, 17426-17434 (2010).

P. H. Wöbkenberg, T. Ishwara, J. Nelson, D. D. C. Bradley, S. A. Haque, T. D. Anthopoulos, "${\hbox{TiO}}_{2}$ thin-film transistors fabricated by spray pyrolysis," Appl. Phys. Lett. 96, 082116-1-082116-3 (2010).

E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, S. H. K. Park, C. S. Hwang, R. Martins, "Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing," Appl. Phys. Lett. 97, (2010) Article Number: 052105.

P. Barquinha, L. Pereira, G. Goncalves, D. Kuscer, M. Kosec, A. Vila, A. Olziersky, J. Morante, R. Martins, E. Fortunato, "Low-temperature sputtered mixtures of high-kappa and high bandgap dielectrics for GIZO TFTs," J. Soc. Inf. Display 18, 762-772 (2010).

2009 (6)

D. Kim, Y. Jeong, K. Song, S. K. Park, G. Z. Cao, J. Moon, "Ink-jet printed zinc tin oxide thin-film transistors," Langmuir 25, 11149-11154 (2009).

A. Bashir, P. H. Wöbkenberg, J. Smith, J. M. Ball, G. Adamopoulos, D. D. C. Bradley, T. D. Anthopoulos, "High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere," Adv. Mater. 21, 2226-2231 (2009).

K. Okamura, D. Nikolova, N. Mechau, H. Hahn, "Appropriate choice of channel ratio in thin-film transistors for the exact determination of field-effect mobility," Appl. Phys. Lett. 94, 183503-1-183503-3 (2009).

R. Martins, L. Raniero, L. Pereira, D. Costa, H. Aguas, S. Pereira, L. Silva, A. Goncalves, I. Ferreira, E. Fortunato, "Nanostructured silicon and its application to solar cells, position sensors and thin film transistors," Philos. Mag. 89, 2699-2721 (2009).

E. Fortunato, A. Gonçalves, A. Pimentel, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, R. Martins, "Zinc oxide, a multifunctional material: From material to device applications," Appl. Phys. A 96, 197-205 (2009).

S. J. Seo, C. G. Choi, Y. H. Hwang, B. S. Bae, "High performance solution-processed amorphous zinc tin oxide thin film transistor," J. Phys. D, Appl. Phys. 42, 035106 (2009).

2008 (2)

P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, "The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs," Electrochem. Solid State Lett. 11, H248-H251 (2008).

L. Pereira, P. Barquinha, E. Fortunato, R. Martins, D. Kang, C. J. Kim, H. Lim, I. Song, Y. Park, "High k dielectrics for low temperature electronics," Thin Solid Films 516, 1544-1548 (2008).

2007 (3)

G. Goncalves, E. Elangovan, P. Barquinha, L. Pereira, R. Martins, E. Fortunato, "Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films," Thin Solid Films 515, 8562-8566 (2007).

R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Goncalves, E. Fortunato, "Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors," J. Appl. Phys. 10, 044505 (2007).

D. H. Lee, Y. J. Chang, G. S. Herman, C. H. Chang, "A general route to printable high-mobility transparent amorphous oxide semiconductors," Adv. Mater. 19, 843-847 (2007).

2006 (2)

P. Görrn, M. Sander, J. Meyer, M. Kröger, E. Becker, H. H. Johannes, W. Kowalsky, T. Riedl, "Towards see-through displays: Fully transparent thin-film transistors driving transparent organic light-emitting diodes," Adv. Mater. 18, 738-741 (2006).

P. Barquinha, E. Fortunato, A. Goncalves, A. Pimentel, A. Marques, L. Pereira, R. Martins, "Influence of time, light and temperature on the electrical properties of zinc oxide TFTs," Supperlattices and Microstructures 39, 319-327 (2006).

2005 (1)

H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler, "High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer," Appl. Phys. Lett. 86, 013503 (2005).

2004 (3)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

R. Martins, E. Fortunato, P. Nunes, I. Ferreira, A. Marques, M. Bender, N. Katsarakis, V. Cimalla, G. Kiriakidis, "Zinc oxide as an ozone sensor," J. Appl. Phys. 96, 1398-1408 (2004).

M. M. Bagheri-Mohagheghi, M. S. Saremi, "The influence of Al doping on the electrical, optical and structural properties of ${\hbox{SnO}}_{2}$ transparent conducting films deposited by the spray pyrolysis technique," J. Phys. D: Appl. Phys. 37, 1248-1253 (2004).

2003 (1)

M. M. Bagheri-Mohagheghi, M. Shokooh-Saremi, "Investigations on the physical properties of the ${\hbox{SnO}}_{2}-{\rm ZnO}$ transparent conducting binary—Binary system deposited by spray pyrolysis technique," Thin Solid Films 441, 238-242 (2003).

1999 (1)

I. Baia, M. Quintela, L. Mendes, P. Nunes, R. Martins, "Performances exhibited by large area ITO layers produced by rf magnetron sputtering," Thin Solid Films 337, 171-175 (1999).

1997 (1)

W. K. Choi, H. Sung, K. H. Kim, J. S. Cho, S. C. Choi, H.-J. Jung, S. K. Koh, C. M. Lee, K. Jeong, "Oxidation process from SnO to ${\hbox{SnO}}_{2}$," J. Mater. Sci. Lett. 16, 1551-1554 (1997).

1939 (1)

A. Patterson, "The Scherrer formula for X-ray particle size determination," Phys. Rev. 56, 978-982 (1939).

Adv. Funct. Mater (1)

G. Adamopoulos, A. Bashir, W. P. Gillin, S. Georgakopoulos, M. Shkunov, M. A. Baklar, N. Stingelin, D. D. C. Bradley, T. D. Anthopoulos, "Structural and electrical characterization of ZnO films grown by spray pyrolysis and their application in thin film transistors," Adv. Funct. Mater 21, 525-531 (2011).

Adv. Mater. (4)

E. Fortunato, P. Barquinha, R. Martins, "Oxide semiconductor thin film transistors: A review of recent advances," Adv. Mater. 24, 2945-2986 (2012).

D. H. Lee, Y. J. Chang, G. S. Herman, C. H. Chang, "A general route to printable high-mobility transparent amorphous oxide semiconductors," Adv. Mater. 19, 843-847 (2007).

P. Görrn, M. Sander, J. Meyer, M. Kröger, E. Becker, H. H. Johannes, W. Kowalsky, T. Riedl, "Towards see-through displays: Fully transparent thin-film transistors driving transparent organic light-emitting diodes," Adv. Mater. 18, 738-741 (2006).

A. Bashir, P. H. Wöbkenberg, J. Smith, J. M. Ball, G. Adamopoulos, D. D. C. Bradley, T. D. Anthopoulos, "High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere," Adv. Mater. 21, 2226-2231 (2009).

Appl. Phys. A (1)

E. Fortunato, A. Gonçalves, A. Pimentel, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, R. Martins, "Zinc oxide, a multifunctional material: From material to device applications," Appl. Phys. A 96, 197-205 (2009).

Appl. Phys. Lett. (5)

G. Adamopoulos, S. Thomas, D. D. C. Bradley, M. A. McLachlan, T. D. Anthopoulos, "Low-voltage ZnO thin-film transistors based on ${\hbox{Y}}_{2}{\hbox{O}}_{3}$ and ${\hbox{Al}}_{2}{\hbox{O}}_{3}$ high-k dielectrics deposited by spray pyrolysis in air," Appl. Phys. Lett. 98, 123503-1-123503-3 (2011).

P. H. Wöbkenberg, T. Ishwara, J. Nelson, D. D. C. Bradley, S. A. Haque, T. D. Anthopoulos, "${\hbox{TiO}}_{2}$ thin-film transistors fabricated by spray pyrolysis," Appl. Phys. Lett. 96, 082116-1-082116-3 (2010).

H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler, "High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer," Appl. Phys. Lett. 86, 013503 (2005).

K. Okamura, D. Nikolova, N. Mechau, H. Hahn, "Appropriate choice of channel ratio in thin-film transistors for the exact determination of field-effect mobility," Appl. Phys. Lett. 94, 183503-1-183503-3 (2009).

E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, S. H. K. Park, C. S. Hwang, R. Martins, "Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing," Appl. Phys. Lett. 97, (2010) Article Number: 052105.

Electrochem. Solid State Lett. (1)

P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, "The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs," Electrochem. Solid State Lett. 11, H248-H251 (2008).

IEEE Trans. Electron Devices (1)

K. Abe, K. Takahashi, A. Sato, H. Kumomi, K. Nomura, T. Kamiya, J. Kanicki, H. Hosono, "Amorphous In-Ga-Zn-O dual-gate TFTs: Current-voltage characteristics and electrical stress instabilities," IEEE Trans. Electron Devices 59, 1928-1935 (2012).

J. Amer. Chem. Soc. (1)

Y. Ha, S. Jeong, J. Wu, M. G. Kim, V. P. Dravid, A. Facchetti, T. J. Marks, "Flexible low-voltage organic thin-film transistors enabled by low-temperature, ambient solution-processable inorganic/organic hybrid gate dielectrics," J. Amer. Chem. Soc. 132, 17426-17434 (2010).

J. Appl. Phys. (2)

R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Goncalves, E. Fortunato, "Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors," J. Appl. Phys. 10, 044505 (2007).

R. Martins, E. Fortunato, P. Nunes, I. Ferreira, A. Marques, M. Bender, N. Katsarakis, V. Cimalla, G. Kiriakidis, "Zinc oxide as an ozone sensor," J. Appl. Phys. 96, 1398-1408 (2004).

J. Dis. Tech (1)

P. K. Nayak, J. V. Pinto, G. Gonçalves, R. Martins, E. Fortunato, "Environmental, optical, and electrical stability study of solution-processed zinc-tin-oxide thin-film transistors," J. Dis. Tech 7, 640-643 (2011).

J. Mater. Sci. Lett. (1)

W. K. Choi, H. Sung, K. H. Kim, J. S. Cho, S. C. Choi, H.-J. Jung, S. K. Koh, C. M. Lee, K. Jeong, "Oxidation process from SnO to ${\hbox{SnO}}_{2}$," J. Mater. Sci. Lett. 16, 1551-1554 (1997).

J. Phys. D, Appl. Phys. (1)

S. J. Seo, C. G. Choi, Y. H. Hwang, B. S. Bae, "High performance solution-processed amorphous zinc tin oxide thin film transistor," J. Phys. D, Appl. Phys. 42, 035106 (2009).

J. Phys. D: Appl. Phys. (1)

M. M. Bagheri-Mohagheghi, M. S. Saremi, "The influence of Al doping on the electrical, optical and structural properties of ${\hbox{SnO}}_{2}$ transparent conducting films deposited by the spray pyrolysis technique," J. Phys. D: Appl. Phys. 37, 1248-1253 (2004).

J. Soc. Inf. Display (1)

P. Barquinha, L. Pereira, G. Goncalves, D. Kuscer, M. Kosec, A. Vila, A. Olziersky, J. Morante, R. Martins, E. Fortunato, "Low-temperature sputtered mixtures of high-kappa and high bandgap dielectrics for GIZO TFTs," J. Soc. Inf. Display 18, 762-772 (2010).

Jn. J. App. Phys. (1)

J. H. Park, W. J. Choi, J. Y. Oh, S. S. Chael, W. S. Jang, S. J. Lee, K. M. Song, H. K. Baik, "Low-temperature, aqueous-solution-processed zinc tin oxide thin film transistor," Jn. J. App. Phys. 50, 07020-1-07020-3 (2011).

Langmuir (1)

D. Kim, Y. Jeong, K. Song, S. K. Park, G. Z. Cao, J. Moon, "Ink-jet printed zinc tin oxide thin-film transistors," Langmuir 25, 11149-11154 (2009).

Nature (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

Nature Mater. (2)

S. Jeon, S. E. Ahn, I. Song, C. J. Kim, U. I. Chung, E. Lee, I. Yoo, A. Nathan, S. Lee, J. Robertson, K. Kim, "Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays," Nature Mater. 11, 301-305 (2012).

M. G. Kim, M. G. Kanatzidis, A. Facchetti, T. J. Marks, "Low-temperature, high-performances solution-processed metal oxide thin-film transistors formed by a ‘sol-gel-chip’ process," Nature Mater. 10, 45-50 (2011).

Philos. Mag. (1)

R. Martins, L. Raniero, L. Pereira, D. Costa, H. Aguas, S. Pereira, L. Silva, A. Goncalves, I. Ferreira, E. Fortunato, "Nanostructured silicon and its application to solar cells, position sensors and thin film transistors," Philos. Mag. 89, 2699-2721 (2009).

Phys. Rev. (1)

A. Patterson, "The Scherrer formula for X-ray particle size determination," Phys. Rev. 56, 978-982 (1939).

Supperlattices and Microstructures (1)

P. Barquinha, E. Fortunato, A. Goncalves, A. Pimentel, A. Marques, L. Pereira, R. Martins, "Influence of time, light and temperature on the electrical properties of zinc oxide TFTs," Supperlattices and Microstructures 39, 319-327 (2006).

Thin Solid Films (4)

M. M. Bagheri-Mohagheghi, M. Shokooh-Saremi, "Investigations on the physical properties of the ${\hbox{SnO}}_{2}-{\rm ZnO}$ transparent conducting binary—Binary system deposited by spray pyrolysis technique," Thin Solid Films 441, 238-242 (2003).

L. Pereira, P. Barquinha, E. Fortunato, R. Martins, D. Kang, C. J. Kim, H. Lim, I. Song, Y. Park, "High k dielectrics for low temperature electronics," Thin Solid Films 516, 1544-1548 (2008).

I. Baia, M. Quintela, L. Mendes, P. Nunes, R. Martins, "Performances exhibited by large area ITO layers produced by rf magnetron sputtering," Thin Solid Films 337, 171-175 (1999).

G. Goncalves, E. Elangovan, P. Barquinha, L. Pereira, R. Martins, E. Fortunato, "Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films," Thin Solid Films 515, 8562-8566 (2007).

Other (2)

P. Barquinha, R. Martins, E. Fortunato, GaN and ZnO-based Thin Film, Bulk and Nanostructured Materials and Devices (Springer-Verlag, 2012) pp. 435-473.

P. Barquinha, R. Martins, L. Pereira, E. Fortunato, Transparent Semiconductors: From Materials to Devices (Wiley, 2012).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.