Abstract
In this work, we report results concerning the performances of thin-film transistors (TFTs)
where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray
pyrolysis technique. TFTs made with
$\sim$
30 nm thick ZTO channel layer deposited at a substrate temperature of 400
$^{\circ}{{C}}$
and 300
$^{\circ}{{C}}$
exhibited, respectively, a saturation mobility of
$\sim {{2.9}}\ {{cm}}^{2}\cdot{{V}}^{-1}\cdot{{s}}^{-1}$
and 1.45
${{cm}}^{2}\cdot{{V}}^{-1}\cdot{{s}}^{-1}$
;
${V}_{\rm ON}$
voltage of
$\sim$
0.15 V, and 0.2 V; a sub-threshold swing of
$\sim$
400 mV/dec and 500 mV/dec; ON/OFF ratio at the onset of hard saturation current
of
$\sim {{3.5}}\times {{10}}^{5}$
and
${{6}}\times {{10}}^{3}$
, for a drain to source voltage of 10 V (close to or below the gate to source
voltage). This indicates that the substrate temperature is relevant in determining the devices'
electronic performances.
© 2013 IEEE
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