Abstract

Thin-films of copper oxide (Cu<sub>x</sub>O) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure (O<sub>PP</sub>). A metallic Cu film with cubic structure obtained from 0% O<sub>PP</sub> has been transformed to cubic Cu<sub>2</sub>O phase for the increase in O<sub>PP</sub> to 9% but then changed to monoclinic CuO phase (for O<sub>PP</sub> ≥ 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu<sub>x</sub>O films produced with O<sub>PP</sub> ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.

© 2011 IEEE

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