Abstract
In this paper, we proposed the self-assembled monolayer (SAM) as a protection
layer against plasma and chemically induced damages to the back interface of an oxide
semiconductor during the deposition of the passivation layer. When a thin-film
transistor (TFT) is passivated with plasma-enhanced chemical-vapor deposition (PECVD)
SiO<sub>x</sub> and solution-based materials, the back interface of the oxide
semiconductor could be exposed to plasma and chemically induced damages, respectively.
We employed SAMs on the back surface of the oxide semiconductor prior to the passivation
process to suppress such damage. The hydrophobic Cl-SAM (3-chloropropyltriethoxysilane)
suppressed the degradation in mobility and subthreshold slope (SS) due to ion
bombardment during plasma treatment. The hydrophobic CH<sub>3</sub>-SAM
(octyltriethoxysilane) successfully blocked chemically induced damage due to
solution-based passivation.
© 2011 IEEE
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