Abstract

In this paper, we proposed the self-assembled monolayer (SAM) as a protection layer against plasma and chemically induced damages to the back interface of an oxide semiconductor during the deposition of the passivation layer. When a thin-film transistor (TFT) is passivated with plasma-enhanced chemical-vapor deposition (PECVD) SiO<sub>x</sub> and solution-based materials, the back interface of the oxide semiconductor could be exposed to plasma and chemically induced damages, respectively. We employed SAMs on the back surface of the oxide semiconductor prior to the passivation process to suppress such damage. The hydrophobic Cl-SAM (3-chloropropyltriethoxysilane) suppressed the degradation in mobility and subthreshold slope (SS) due to ion bombardment during plasma treatment. The hydrophobic CH<sub>3</sub>-SAM (octyltriethoxysilane) successfully blocked chemically induced damage due to solution-based passivation.

© 2011 IEEE

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  1. K. Nomura, H. Ohta, A. Takaki, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488 (2004).
  2. J. Park, I. Song, S. Kim, S. Kim, C. Kim, J. Lee, H. Lee, E. Lee, H. Yin, K. K. Kim, K. W. Kwon, Y. Park, "Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors," Appl. Phys. Lett. 93, 053501 (2008).
  3. M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, "High mobility bottom gate InGaZnO thin film transistors with ${\hbox{SiO}}_{x}$ etch stopper," Appl. Phys. Lett. 90, 212114 (2007).
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  5. Y. J. Chang, D. H. Lee, G. S. Herman, C. H. Chang, "Performance, spin-coated zinc tin oxide thin-film transistors," Electrochem. Solid-State Lett. 10, H135-H138 (2007).
  6. Y. H. Kim, K. H. Kim, M. S. Oh, H. J. Kim, J. I. Han, S. K. Park, "Ink-jet-printed zinc–tin–oxide thin-film transistors and circuits with rapid thermal annealing process," IEEE Electron Device Lett. 31, 836- (2010).
  7. J. S. Park, J. K. Jeong, H. J. Chung, Y. G. Mo, H. D. Kim, "Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water," Appl. Phys. Lett. 92, 072104 (2008).
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  16. Y. Jang, J. H. Cho, D. H. Kim, Y. D. Park, M. Hwang, K. W. Cho, "Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor," Appl. Phys. Lett. 90, 132104 (2007).
  17. S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, "Control of carrier density by self-assembled monolayers in organic field-effect transistors," Nature Mater. 3, 317 (2004).

2010

Y. H. Kim, K. H. Kim, M. S. Oh, H. J. Kim, J. I. Han, S. K. Park, "Ink-jet-printed zinc–tin–oxide thin-film transistors and circuits with rapid thermal annealing process," IEEE Electron Device Lett. 31, 836- (2010).

Y. H. Kim, H. S. Kim, J. I. Han, S. K. Park, "Solvent-mediated threshold voltage shift in solution-processed transparent oxide thin-film transistors," Appl. Phys. Lett. 97, 092105 (2010).

2009

P. T. Liu, Y. T. Chou, L. F. Teng, "Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress," Appl. Phys. Lett. 95, 233504 (2009).

K. S. Son, T. S. Kim, J. S. Jung, M. K. Ryu, K. B. Park, B. W. Yoo, K. C. Park, J. Y. Kwon, S. Y. Lee, J. M. Kim, "Threshold voltage control of amorphous gallium indium zinc oxide TFTs by suppressing back-channel current," Electrochem. Solid-State Lett. 12, H26-H28 (2009).

S. J. Seo, C. G. Choi, Y. H. Hwang, B. S. Bae, "High performance solution-processed amorphous zinc tin oxide thin film transistor," J. Phys. D: Appl. Phys. 42, 035106 (2009).

2008

J. Park, I. Song, S. Kim, S. Kim, C. Kim, J. Lee, H. Lee, E. Lee, H. Yin, K. K. Kim, K. W. Kwon, Y. Park, "Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors," Appl. Phys. Lett. 93, 053501 (2008).

J. S. Park, J. K. Jeong, H. J. Chung, Y. G. Mo, H. D. Kim, "Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water," Appl. Phys. Lett. 92, 072104 (2008).

J. K. Jeong, H. W. Yang, J. H. Jeong, Y. G. Mo, H. D. Kim, "Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors," Appl. Phys. Lett. 93, 123508 (2008).

2007

M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, "High mobility bottom gate InGaZnO thin film transistors with ${\hbox{SiO}}_{x}$ etch stopper," Appl. Phys. Lett. 90, 212114 (2007).

Y. J. Chang, D. H. Lee, G. S. Herman, C. H. Chang, "Performance, spin-coated zinc tin oxide thin-film transistors," Electrochem. Solid-State Lett. 10, H135-H138 (2007).

Y. Jang, J. H. Cho, D. H. Kim, Y. D. Park, M. Hwang, K. W. Cho, "Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor," Appl. Phys. Lett. 90, 132104 (2007).

2006

J. H. Cho, Y. D. Park, D. H. Kim, W. K. Kim, H. W. Jang, J. L. Lee, K. W. Cho, "Reactive metal contact at indium–tin–oxide/self-assembled monolayer interfaces," Appl. Phys. Lett. 88, 102104 (2006).

2005

B. de Boer, A. Hadipour, M. M. Mandoc, T. Van Woudenbergh, P. W. M. Blom, "Tuning of metal work functions with self-assembled monolayers," Adv. Mater. 17, 621 (2005).

2004

K. Nomura, H. Ohta, A. Takaki, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488 (2004).

S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, "Control of carrier density by self-assembled monolayers in organic field-effect transistors," Nature Mater. 3, 317 (2004).

1996

I. H. Campbell, S. Rubin, T. A. Zawodzinski, J. D. Kress, R. L. Martin, D. L. Smith, "Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers," Phys. Rev. B 54, 014321 (1996).

A. Ulman, "Formation and structure of self-assembled monolayers," Chem. Rev. 96, 1533 (1996).

Adv. Mater.

B. de Boer, A. Hadipour, M. M. Mandoc, T. Van Woudenbergh, P. W. M. Blom, "Tuning of metal work functions with self-assembled monolayers," Adv. Mater. 17, 621 (2005).

Appl. Phys. Lett.

Y. Jang, J. H. Cho, D. H. Kim, Y. D. Park, M. Hwang, K. W. Cho, "Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor," Appl. Phys. Lett. 90, 132104 (2007).

Y. H. Kim, H. S. Kim, J. I. Han, S. K. Park, "Solvent-mediated threshold voltage shift in solution-processed transparent oxide thin-film transistors," Appl. Phys. Lett. 97, 092105 (2010).

J. H. Cho, Y. D. Park, D. H. Kim, W. K. Kim, H. W. Jang, J. L. Lee, K. W. Cho, "Reactive metal contact at indium–tin–oxide/self-assembled monolayer interfaces," Appl. Phys. Lett. 88, 102104 (2006).

J. Park, I. Song, S. Kim, S. Kim, C. Kim, J. Lee, H. Lee, E. Lee, H. Yin, K. K. Kim, K. W. Kwon, Y. Park, "Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors," Appl. Phys. Lett. 93, 053501 (2008).

M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, "High mobility bottom gate InGaZnO thin film transistors with ${\hbox{SiO}}_{x}$ etch stopper," Appl. Phys. Lett. 90, 212114 (2007).

J. S. Park, J. K. Jeong, H. J. Chung, Y. G. Mo, H. D. Kim, "Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water," Appl. Phys. Lett. 92, 072104 (2008).

J. K. Jeong, H. W. Yang, J. H. Jeong, Y. G. Mo, H. D. Kim, "Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors," Appl. Phys. Lett. 93, 123508 (2008).

P. T. Liu, Y. T. Chou, L. F. Teng, "Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress," Appl. Phys. Lett. 95, 233504 (2009).

Chem. Rev.

A. Ulman, "Formation and structure of self-assembled monolayers," Chem. Rev. 96, 1533 (1996).

Electrochem. Solid-State Lett.

K. S. Son, T. S. Kim, J. S. Jung, M. K. Ryu, K. B. Park, B. W. Yoo, K. C. Park, J. Y. Kwon, S. Y. Lee, J. M. Kim, "Threshold voltage control of amorphous gallium indium zinc oxide TFTs by suppressing back-channel current," Electrochem. Solid-State Lett. 12, H26-H28 (2009).

Y. J. Chang, D. H. Lee, G. S. Herman, C. H. Chang, "Performance, spin-coated zinc tin oxide thin-film transistors," Electrochem. Solid-State Lett. 10, H135-H138 (2007).

IEEE Electron Device Lett.

Y. H. Kim, K. H. Kim, M. S. Oh, H. J. Kim, J. I. Han, S. K. Park, "Ink-jet-printed zinc–tin–oxide thin-film transistors and circuits with rapid thermal annealing process," IEEE Electron Device Lett. 31, 836- (2010).

J. Phys. D: Appl. Phys.

S. J. Seo, C. G. Choi, Y. H. Hwang, B. S. Bae, "High performance solution-processed amorphous zinc tin oxide thin film transistor," J. Phys. D: Appl. Phys. 42, 035106 (2009).

Nature

K. Nomura, H. Ohta, A. Takaki, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488 (2004).

Nature Mater.

S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, "Control of carrier density by self-assembled monolayers in organic field-effect transistors," Nature Mater. 3, 317 (2004).

Phys. Rev. B

I. H. Campbell, S. Rubin, T. A. Zawodzinski, J. D. Kress, R. L. Martin, D. L. Smith, "Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers," Phys. Rev. B 54, 014321 (1996).

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