Abstract

In this paper, we have studied the stability of polymorphous silicon (pm-Si:H) and μc-Si:F:H bottom gate thin-film transistors (TFTs) by combining degradation and relaxation experiments under various stress conditions. We report on polymorphous silicon (pm-Si:H) TFTs with ΔV<sub>TH</sub>=1 V after 10 h of stress and μc-Si:F:H TFTs with superior stability, which show a ΔV<sub>TH</sub> of only 0.05 V under stress conditions similar to those encountered in active-matrix operation regime (V<sub>G</sub>=12 V and V<sub>D</sub>=10 V). Relaxation studies show that the quality of the interface between silicon nitride and pm-Si:H (or μc-Si:F:H) controls the stability at short stress times. Interestingly, the deposition conditions of the semiconductor layer seem to modify the quality of the a-SiN:H and thus the stability of the interface.

© 2011 IEEE

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  1. J. Schmidt, M. O'Regan, R. Eveson, J. C. Sturm, "Active matrix OLED using ${\hbox{150}}\ ^{\circ}{\hbox{C}}$ a-Si:H TFT backplane built on flexible plastic substrate," Proc. SPIE Symp. on Aerosp./Defense Sensing (2003) pp. 24.
  2. T. Tsujimura, "Amorphous/microcrystalline silicon thin film transistor characteristics for large size OLED television driving," Jpn. J. Appl. Phys. 43, 5122-5128 (2004).
  3. M. Oudwan, A. Abramov, D. Daineka, Y. Bonnassieux, P. Roca i Cabarrocas, "Recent progress on bottom gate microcrystalline thin film transistors," Proc TTC'10 (2010).
  4. F. Templier, M. Oudwan, F. Sermet, A. Abramov, P. Roca i Cabarrocas, "Mechanisms of threshold voltage drift in nanocrystalline thin-film transistors for active-matrix displays," Proc. ITC'07 SID Me Spring Meeting 2006 .
  5. M. J. Powell, C. van Berkel, I. D. French, D. H. Nicholls, "bias dependence of instability mechanisms in amorphous silicon thin-film transistors," Appl. Phys. Lett. 51, 1242-1244 (1987).
  6. M. J. Powell, C. van Berkel, J. R. Hughes, "time and temperature dependence of instability in amorphous silicon thin-film transistors," Appl. Phys. Lett. 54, 1323-1325 (1989).
  7. F. R. Libsch, J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors," Appl. Phys. Lett. 62, 1286-1288 (1993).
  8. S. Klein, F. Finger, R. Carius, T. Dylla, B. Rech, M. Grimm, L. Houben, M. Stutzmann, "Intrinsic microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cells," Thin Solid Films 430, 202-207 (2003).
  9. P. St'ahel, S. Hamma, P. Sladek, P. Roca i Cabarrocas, "Metastability studies in silicon thin films: From short range ordered to medium and long range ordered materials," J. Non-Cryst. Solids 227–230, 276-280 (1998).
  10. A. T. Hatzopoulos, N. Arpatzanis, D. H. Tassis, C. A. Dimitriadis, M. Oudwan, F. Templier, G. Kamarinos, "Study of drain leakage current in bottom-gated nanocrystalline silicon thin-film transistors by conduction and low-frequency noise measurements," IEEE Trans. Electron Devices 54, 1076-1082 (2007).
  11. F. Templier, J. Brochet, B. Aventurier, D. Cooper, A. Abramov, D. Daineka, P. Roca i Cabarrocas, "Polymorphous silicon: A promising material for thin-film transistors for low-cost and high-performance active-matrix OLED displays," IEICE Trans. Electron. E93-C, 1490-1494 (2010).
  12. M. Oudwan, O. Moustapha, A. Abramov, D. Daineka, Y. Bonnassieux, P. Roca i Cabarrocas, "Threshold voltage shift under electrical stress in amorphous, polymorphous, and microcrystalline silicon bottom gate thin-film transistors," Phys. Status Solidi. A 207, 1245-1248 (2010).
  13. M. R. Esmaeili, A. Sazonov, A. Nathan, "Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements," Appl. Phys. Lett. 91, 113511-113513 (2007).
  14. R. A. Street, C. C. Tsai, "Fast and slow states at the interface of amorphous silicon and silicon nitride," Appl. Phys. Lett. 48, 1672-1674 (1986).
  15. R. B. Wehrspohn, M. J. Powell, S. C. Deane, I. French, P. Roca i Cabarrocas, "Dangling-bond defect state creation in microcrystalline silicon thin-film transistors," Appl. Phys. Lett. 77, 750-752 (2000).

2010 (2)

F. Templier, J. Brochet, B. Aventurier, D. Cooper, A. Abramov, D. Daineka, P. Roca i Cabarrocas, "Polymorphous silicon: A promising material for thin-film transistors for low-cost and high-performance active-matrix OLED displays," IEICE Trans. Electron. E93-C, 1490-1494 (2010).

M. Oudwan, O. Moustapha, A. Abramov, D. Daineka, Y. Bonnassieux, P. Roca i Cabarrocas, "Threshold voltage shift under electrical stress in amorphous, polymorphous, and microcrystalline silicon bottom gate thin-film transistors," Phys. Status Solidi. A 207, 1245-1248 (2010).

2007 (2)

M. R. Esmaeili, A. Sazonov, A. Nathan, "Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements," Appl. Phys. Lett. 91, 113511-113513 (2007).

A. T. Hatzopoulos, N. Arpatzanis, D. H. Tassis, C. A. Dimitriadis, M. Oudwan, F. Templier, G. Kamarinos, "Study of drain leakage current in bottom-gated nanocrystalline silicon thin-film transistors by conduction and low-frequency noise measurements," IEEE Trans. Electron Devices 54, 1076-1082 (2007).

2004 (1)

T. Tsujimura, "Amorphous/microcrystalline silicon thin film transistor characteristics for large size OLED television driving," Jpn. J. Appl. Phys. 43, 5122-5128 (2004).

2003 (1)

S. Klein, F. Finger, R. Carius, T. Dylla, B. Rech, M. Grimm, L. Houben, M. Stutzmann, "Intrinsic microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cells," Thin Solid Films 430, 202-207 (2003).

2000 (1)

R. B. Wehrspohn, M. J. Powell, S. C. Deane, I. French, P. Roca i Cabarrocas, "Dangling-bond defect state creation in microcrystalline silicon thin-film transistors," Appl. Phys. Lett. 77, 750-752 (2000).

1998 (1)

P. St'ahel, S. Hamma, P. Sladek, P. Roca i Cabarrocas, "Metastability studies in silicon thin films: From short range ordered to medium and long range ordered materials," J. Non-Cryst. Solids 227–230, 276-280 (1998).

1993 (1)

F. R. Libsch, J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors," Appl. Phys. Lett. 62, 1286-1288 (1993).

1989 (1)

M. J. Powell, C. van Berkel, J. R. Hughes, "time and temperature dependence of instability in amorphous silicon thin-film transistors," Appl. Phys. Lett. 54, 1323-1325 (1989).

1987 (1)

M. J. Powell, C. van Berkel, I. D. French, D. H. Nicholls, "bias dependence of instability mechanisms in amorphous silicon thin-film transistors," Appl. Phys. Lett. 51, 1242-1244 (1987).

1986 (1)

R. A. Street, C. C. Tsai, "Fast and slow states at the interface of amorphous silicon and silicon nitride," Appl. Phys. Lett. 48, 1672-1674 (1986).

Appl. Phys. Lett. (6)

M. J. Powell, C. van Berkel, I. D. French, D. H. Nicholls, "bias dependence of instability mechanisms in amorphous silicon thin-film transistors," Appl. Phys. Lett. 51, 1242-1244 (1987).

M. J. Powell, C. van Berkel, J. R. Hughes, "time and temperature dependence of instability in amorphous silicon thin-film transistors," Appl. Phys. Lett. 54, 1323-1325 (1989).

F. R. Libsch, J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors," Appl. Phys. Lett. 62, 1286-1288 (1993).

M. R. Esmaeili, A. Sazonov, A. Nathan, "Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements," Appl. Phys. Lett. 91, 113511-113513 (2007).

R. A. Street, C. C. Tsai, "Fast and slow states at the interface of amorphous silicon and silicon nitride," Appl. Phys. Lett. 48, 1672-1674 (1986).

R. B. Wehrspohn, M. J. Powell, S. C. Deane, I. French, P. Roca i Cabarrocas, "Dangling-bond defect state creation in microcrystalline silicon thin-film transistors," Appl. Phys. Lett. 77, 750-752 (2000).

IEEE Trans. Electron Devices (1)

A. T. Hatzopoulos, N. Arpatzanis, D. H. Tassis, C. A. Dimitriadis, M. Oudwan, F. Templier, G. Kamarinos, "Study of drain leakage current in bottom-gated nanocrystalline silicon thin-film transistors by conduction and low-frequency noise measurements," IEEE Trans. Electron Devices 54, 1076-1082 (2007).

IEICE Trans. Electron. (1)

F. Templier, J. Brochet, B. Aventurier, D. Cooper, A. Abramov, D. Daineka, P. Roca i Cabarrocas, "Polymorphous silicon: A promising material for thin-film transistors for low-cost and high-performance active-matrix OLED displays," IEICE Trans. Electron. E93-C, 1490-1494 (2010).

J. Non-Cryst. Solids (1)

P. St'ahel, S. Hamma, P. Sladek, P. Roca i Cabarrocas, "Metastability studies in silicon thin films: From short range ordered to medium and long range ordered materials," J. Non-Cryst. Solids 227–230, 276-280 (1998).

Jpn. J. Appl. Phys. (1)

T. Tsujimura, "Amorphous/microcrystalline silicon thin film transistor characteristics for large size OLED television driving," Jpn. J. Appl. Phys. 43, 5122-5128 (2004).

Phys. Status Solidi. A (1)

M. Oudwan, O. Moustapha, A. Abramov, D. Daineka, Y. Bonnassieux, P. Roca i Cabarrocas, "Threshold voltage shift under electrical stress in amorphous, polymorphous, and microcrystalline silicon bottom gate thin-film transistors," Phys. Status Solidi. A 207, 1245-1248 (2010).

Thin Solid Films (1)

S. Klein, F. Finger, R. Carius, T. Dylla, B. Rech, M. Grimm, L. Houben, M. Stutzmann, "Intrinsic microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cells," Thin Solid Films 430, 202-207 (2003).

Other (3)

M. Oudwan, A. Abramov, D. Daineka, Y. Bonnassieux, P. Roca i Cabarrocas, "Recent progress on bottom gate microcrystalline thin film transistors," Proc TTC'10 (2010).

F. Templier, M. Oudwan, F. Sermet, A. Abramov, P. Roca i Cabarrocas, "Mechanisms of threshold voltage drift in nanocrystalline thin-film transistors for active-matrix displays," Proc. ITC'07 SID Me Spring Meeting 2006 .

J. Schmidt, M. O'Regan, R. Eveson, J. C. Sturm, "Active matrix OLED using ${\hbox{150}}\ ^{\circ}{\hbox{C}}$ a-Si:H TFT backplane built on flexible plastic substrate," Proc. SPIE Symp. on Aerosp./Defense Sensing (2003) pp. 24.

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