Abstract

The change in electrical characteristics of a-Si:H thin-film transistors (TFTs) was determined in the presence of electrical gate bias stress, gamma radiation, and both simultaneously, simulating the harsh environment of space. Multiple TFTs were tested under each condition, and the current–voltage characteristics were measured. The results show the gate bias stress increasing the threshold voltage (<i>V<sub>t</sub></i>) with power law time dependence while the gamma irradiation decreases threshold voltage for all working transistors. When both the irradiation and gate bias stress were applied simultaneously, the <i>V<sub>t</sub></i> initially increased with electrical stress and then decreased as the gamma radiation dominated. Changes in effective mobility were also extracted and detailed analysis of the current-voltage characteristics indicated that the gamma radiation creates interface traps and electron-hole pairs whereas the gate stress produces defect states in the amorphous silicon.

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  1. L. Zhou, T. Jackson, E. Brandon, W. West, "Flexible substrate a-Si:H TFTs for space applications," Device Res, Conf, Dig, (2004) pp. 123-124.
  2. D. R. Allee, L. T. Clark, B. D. Vogt, R. Shringarpure, S. M. Venugopal, S. G. Uppili, K. Koftanoglu, H. Shivalingaiah, Z. P. Li, J. J. R. Fernando, E. J. Bawolek, S. O'Rourke, "Circuit-level impact of a-Si:H thin-film-transistor degradation effects," IEEE Trans. Electron Devices 56, 1166-1176 (2009).
  3. S. Dean, R. Wehrspohn, M. Powell, "Unification of time and temperature dependence of dangling-bond-defect creation and removal in amorphous silicon thin-film transistors," Phys. Rev. B 58, 12625-12628 (1998).
  4. S. Dean, M. Powell, "Field-effect conductance in amorphous silicon thin-film transistors with a defect pool density of sates," J. Appl. Phys. 74, 6655-6666 (1993).
  5. R. Shringarpure, S. Venugopal, Z. Li, L. Clark, D. R. Allee, E. Bawolek, D. Toy, "Circuit simulation of threshold voltage degradation in a-Si:H TFTs fabricated at 175$^{\circ}$C," IEEE Trans. Electron Devices 54, 1781-1783 (2007).
  6. M. J. Powell, C. Van Berkel, J. R. Hughes, "Time and temperature dependent of instability mechanisms in amorphous silicon thin-film-transistors," Appl. Phys. Lett. 54, 1323-1325 (1989).
  7. N. A. Hastas, C. A. Dimitriadis, J. Brini, G. Kamarinos, V. K. Gueorguiez, S. Kaschieva, "Effects of gammaray irradiation on polycrystalline silicon thin-film transistors," Microelectron. Rel. 43, 57-60 (2003).
  8. I. D. French, A. J. Snell, P. G. LeComber, J. H. Stephen, "The effect of gamma-irradiation on amorphous silicon field effect transistors," Appl. Phys. A 31, 19-22 (1983).
  9. J. M. Boudry, L. E. Antonuk, "Radiation damage of amorphous silicon thin-film, field-effect transistors," Med. Phys. 23, 743-754 (1996).
  10. A. Nathan, K. Kumar, P. Sakariya, S. Servati, S. Sambandan, D. Striakhilev, "Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic," IEEE. J. Solid-State Circuits 39, 1477-1486 (2004).
  11. J. Kanichi, S. Martin, Thin Film Transistors (Marcel Dekker, 2003) pp. 87.

2009

D. R. Allee, L. T. Clark, B. D. Vogt, R. Shringarpure, S. M. Venugopal, S. G. Uppili, K. Koftanoglu, H. Shivalingaiah, Z. P. Li, J. J. R. Fernando, E. J. Bawolek, S. O'Rourke, "Circuit-level impact of a-Si:H thin-film-transistor degradation effects," IEEE Trans. Electron Devices 56, 1166-1176 (2009).

2007

R. Shringarpure, S. Venugopal, Z. Li, L. Clark, D. R. Allee, E. Bawolek, D. Toy, "Circuit simulation of threshold voltage degradation in a-Si:H TFTs fabricated at 175$^{\circ}$C," IEEE Trans. Electron Devices 54, 1781-1783 (2007).

2004

A. Nathan, K. Kumar, P. Sakariya, S. Servati, S. Sambandan, D. Striakhilev, "Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic," IEEE. J. Solid-State Circuits 39, 1477-1486 (2004).

2003

N. A. Hastas, C. A. Dimitriadis, J. Brini, G. Kamarinos, V. K. Gueorguiez, S. Kaschieva, "Effects of gammaray irradiation on polycrystalline silicon thin-film transistors," Microelectron. Rel. 43, 57-60 (2003).

1998

S. Dean, R. Wehrspohn, M. Powell, "Unification of time and temperature dependence of dangling-bond-defect creation and removal in amorphous silicon thin-film transistors," Phys. Rev. B 58, 12625-12628 (1998).

1996

J. M. Boudry, L. E. Antonuk, "Radiation damage of amorphous silicon thin-film, field-effect transistors," Med. Phys. 23, 743-754 (1996).

1993

S. Dean, M. Powell, "Field-effect conductance in amorphous silicon thin-film transistors with a defect pool density of sates," J. Appl. Phys. 74, 6655-6666 (1993).

1989

M. J. Powell, C. Van Berkel, J. R. Hughes, "Time and temperature dependent of instability mechanisms in amorphous silicon thin-film-transistors," Appl. Phys. Lett. 54, 1323-1325 (1989).

1983

I. D. French, A. J. Snell, P. G. LeComber, J. H. Stephen, "The effect of gamma-irradiation on amorphous silicon field effect transistors," Appl. Phys. A 31, 19-22 (1983).

Appl. Phys. A

I. D. French, A. J. Snell, P. G. LeComber, J. H. Stephen, "The effect of gamma-irradiation on amorphous silicon field effect transistors," Appl. Phys. A 31, 19-22 (1983).

Appl. Phys. Lett.

M. J. Powell, C. Van Berkel, J. R. Hughes, "Time and temperature dependent of instability mechanisms in amorphous silicon thin-film-transistors," Appl. Phys. Lett. 54, 1323-1325 (1989).

IEEE Trans. Electron Devices

D. R. Allee, L. T. Clark, B. D. Vogt, R. Shringarpure, S. M. Venugopal, S. G. Uppili, K. Koftanoglu, H. Shivalingaiah, Z. P. Li, J. J. R. Fernando, E. J. Bawolek, S. O'Rourke, "Circuit-level impact of a-Si:H thin-film-transistor degradation effects," IEEE Trans. Electron Devices 56, 1166-1176 (2009).

R. Shringarpure, S. Venugopal, Z. Li, L. Clark, D. R. Allee, E. Bawolek, D. Toy, "Circuit simulation of threshold voltage degradation in a-Si:H TFTs fabricated at 175$^{\circ}$C," IEEE Trans. Electron Devices 54, 1781-1783 (2007).

IEEE. J. Solid-State Circuits

A. Nathan, K. Kumar, P. Sakariya, S. Servati, S. Sambandan, D. Striakhilev, "Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic," IEEE. J. Solid-State Circuits 39, 1477-1486 (2004).

J. Appl. Phys.

S. Dean, M. Powell, "Field-effect conductance in amorphous silicon thin-film transistors with a defect pool density of sates," J. Appl. Phys. 74, 6655-6666 (1993).

Med. Phys.

J. M. Boudry, L. E. Antonuk, "Radiation damage of amorphous silicon thin-film, field-effect transistors," Med. Phys. 23, 743-754 (1996).

Microelectron. Rel.

N. A. Hastas, C. A. Dimitriadis, J. Brini, G. Kamarinos, V. K. Gueorguiez, S. Kaschieva, "Effects of gammaray irradiation on polycrystalline silicon thin-film transistors," Microelectron. Rel. 43, 57-60 (2003).

Phys. Rev. B

S. Dean, R. Wehrspohn, M. Powell, "Unification of time and temperature dependence of dangling-bond-defect creation and removal in amorphous silicon thin-film transistors," Phys. Rev. B 58, 12625-12628 (1998).

Other

L. Zhou, T. Jackson, E. Brandon, W. West, "Flexible substrate a-Si:H TFTs for space applications," Device Res, Conf, Dig, (2004) pp. 123-124.

J. Kanichi, S. Martin, Thin Film Transistors (Marcel Dekker, 2003) pp. 87.

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