Abstract

The photo effect of gap-gate type hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) has been studied to be employed as light sensors owing to its outstanding photosensitivity. It can be operated in on region to provide a higher current level as the sensing signal. However, the gap–gate a-Si:H TFT suffers from some problems such as the photo-current degradation resulted from illuminations and the disturbance of the backlight source when it is used as the sensor in display panel. A new method is proposed to overcome the above issues, which gives a feasible way for this kind of TFT to be used in TFT LCD panel. In this paper, the operation of the sensing method is fully described.

© 2011 IEEE

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  12. L. Eglseer, S. Horvat, H. Kroha, "Study of the long-term behavior of the sensitivity of amorphous silicon photo detectors under illumination," Eur. Symp. on Semiconductor Detectors (2006) pp. 18-21.
  13. M. Hack, A. G. Lewis, R. H. Bruce, Timing independent pixel-scale light sensing apparatus U.S. Patent 5 153 420 (1992).
  14. H. Pan, X.-F. Feng, S. Daly, "LCD motion blur modeling and analysis," IEEE Int. Conf. on Image Process. (2005).
  15. S. Hong, B. H. Shin, T.-S. Kim, B. Berkeley, S. S. Kim, "Advanced method for motion-blur reduction in LCDs," SID'05 Dig. (2005) pp. 466-469.

2008 (1)

S. H. Kim, E. B. Kim, H. Y. Choi, M. H. Kang, J. H. Hur, J. Jang, "A coplanar hydrogenated amorphous silicon thin-film transistor for controlling backlight brightness of liquid-crystal display," Solid-State Electron. 52, 478-481 (2008).

2006 (1)

T. Kruger, "On the origin of the Staebler–Wronski effect," J. Appl. Phys. 99, 063509 (2006).

1997 (1)

S. M. Gadelrab, S. G. Chamberlain, "The source-gated amorphous silicon photo-transistor," IEEE Trans. on Electron Devices 44, 1789-1794 (1997).

1995 (1)

M. Vanecek, A. Poruba, A. Fejfar, J. Kocka, "Direct measurement of the deep defect density in thin amorphous silicon films with the absolute constant photocurrent method," Jpn.. Soc. Appl. Phys. 78, 6203-6210 (1995).

1993 (1)

M. Yamaguchi, Y. Kaneko, K. Tsutsui, "Two-dimensional contact-type image sensor using amorphous silicon photo-transistor," Jpn. J. Appl. Phy. 32, (1993).

1985 (1)

C. Van Berkel, M. J. Powell, "The photosensitivity of amorphous silicon thin film transistors," J. Non-Crystalline Solids 77–78, 1393-1396 (1985).

1980 (1)

D. L. Staebler, C. R. Wronski, "Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon," J. Appl. Phys. 51, 3262-3268 (1980).

IEEE Trans. on Electron Devices (1)

S. M. Gadelrab, S. G. Chamberlain, "The source-gated amorphous silicon photo-transistor," IEEE Trans. on Electron Devices 44, 1789-1794 (1997).

J. Appl. Phys. (2)

D. L. Staebler, C. R. Wronski, "Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon," J. Appl. Phys. 51, 3262-3268 (1980).

T. Kruger, "On the origin of the Staebler–Wronski effect," J. Appl. Phys. 99, 063509 (2006).

J. Non-Crystalline Solids (1)

C. Van Berkel, M. J. Powell, "The photosensitivity of amorphous silicon thin film transistors," J. Non-Crystalline Solids 77–78, 1393-1396 (1985).

Jpn. J. Appl. Phy. (1)

M. Yamaguchi, Y. Kaneko, K. Tsutsui, "Two-dimensional contact-type image sensor using amorphous silicon photo-transistor," Jpn. J. Appl. Phy. 32, (1993).

Jpn.. Soc. Appl. Phys. (1)

M. Vanecek, A. Poruba, A. Fejfar, J. Kocka, "Direct measurement of the deep defect density in thin amorphous silicon films with the absolute constant photocurrent method," Jpn.. Soc. Appl. Phys. 78, 6203-6210 (1995).

Solid-State Electron. (1)

S. H. Kim, E. B. Kim, H. Y. Choi, M. H. Kang, J. H. Hur, J. Jang, "A coplanar hydrogenated amorphous silicon thin-film transistor for controlling backlight brightness of liquid-crystal display," Solid-State Electron. 52, 478-481 (2008).

Other (8)

F. Okumura, Thin film photoelectric converting device U.S. Patent 4 575 638 (1986).

T. Hamano, H. Ito, M. Takenouchi, T. Ozawa, M. Fuse, T. Nakamura, Elongate thin-film reader U.S. Patent 4 419 696 (1983).

W. den Boer, A. Abileah, P. Green, T. Larsson, S. Robinson, T. Nguyen, "Active matrix LCD with integrated optical touch screen," SID'03 Dig. (2003) pp. 1494-1497.

A. Abileah, W. den Boer, T. Larsson, T. Baker, S. Robinson, R. Siegel, N. Fickenscher, B. Leback, T. Griffin, P. Green, "Integrated optical touch panel in a 14.1 $^{\prime\prime}$ AMLCD," SID'04 Dig. (2004) pp. 1544-1577.

L. Eglseer, S. Horvat, H. Kroha, "Study of the long-term behavior of the sensitivity of amorphous silicon photo detectors under illumination," Eur. Symp. on Semiconductor Detectors (2006) pp. 18-21.

M. Hack, A. G. Lewis, R. H. Bruce, Timing independent pixel-scale light sensing apparatus U.S. Patent 5 153 420 (1992).

H. Pan, X.-F. Feng, S. Daly, "LCD motion blur modeling and analysis," IEEE Int. Conf. on Image Process. (2005).

S. Hong, B. H. Shin, T.-S. Kim, B. Berkeley, S. S. Kim, "Advanced method for motion-blur reduction in LCDs," SID'05 Dig. (2005) pp. 466-469.

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