Abstract

In this paper, we report the environmental, optical, and gate bias stress stability of amorphous zinc–tin–oxide (ZTO) thin-film transistors (TFTs) fabricated by sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical stability. The threshold voltage stability of ZTO TFTs was sensitive to both positive and negative gate bias stress. Maximum threshold voltage shifting of +1.9 and -3.2 V was observed under a gate bias stress of +10 and -10 V, respectively, with no significant change to subthreshold swing value.

© 2011 IEEE

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  1. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, R. F. P. Martins, "Fully transparent ZnO thin-film transistor produced at room temperature," Adv. Mater. 17, 590-594 (2005).
  2. P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc. 156, H161-H168 (2009).
  3. P. K. Nayak, T. Busani, E. Elamurugu, P. Barquinha, R. Martins, Y. Hong, E. Fortunato, "Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-$\hbox{k}$ dielectric," Appl. Phys. Lett. 97, (2010) Art. ID 183504.
  4. D. H. Lee, Y. J. Chang, G. S. Herman, C. H. Chang, "A general route to printable high-mobility transparent amorphous oxide semiconductors," Adv. Mater. 19, 843-847 (2007).
  5. C. G. Choi, S. J. Seo, B. S. Bae, "Solution-processed indium-zinc oxide transparent thin-film transistors," Electrochem. Solid-State Lett. 11, H7-H9 (2008).
  6. E. M. C. Fortunato, L. M. N. Pereira, P. M. C. Barquinha, A. M. B. Rego, G. Gonçalves, A. Vilà, J. R. Morante, R. F. P. Martins, "High mobility indium free amorphous oxide thin film transistors," Appl. Phys. Lett. 92, 222103 (2008).
  7. M. G. Kim, H. S. Kim, Y. G. Ha, J. He, M. G. Kanatzidis, A. Facchetti, T. J. Marks, "High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors," J. Amer. Chem. Soc. 132, 10352-10364 (2010).
  8. P. K. Nayak, J. Jang, C. Lee, Y. Hong, "Effects of Li doping on the performance and environmental stability of solution processed ZnO thin film transistors," Appl. Phys. Lett. 95, (2009) Art. ID 193503.
  9. D. Kang, H. Lim, C. Kim, I. Song, J. Park, Y. Park, "Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules," Appl. Phys. Lett. 90, (2007) Art. ID 192101.
  10. J. S. Park, J. K. Jeong, H. J. Chung, Y. G. Mo, H. D. Kim, "Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water," Appl. Phys. Lett. 92, (2008) Art. ID 072104.
  11. A. Olziersky, P. Barquinha, A. Vilà, L. Pereira, G. Gonçalves, E. Fortunato, R. Martins, J. R. Morante, "Insight on the SU-8 resist as passivation layer for transparent $\hbox{Ga}_{2}\hbox{O}_{3}$–$\hbox{In}_{2}\hbox{O}_{3}$–ZnO thin-film transistors," J. Appl. Phys. 108, (2010) Art. ID 064505.
  12. H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler, "High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer," Appl. Phys. Lett. 86, (2005) Art. ID 013503.
  13. S. K. Park, Y. H. Kim, H. S. Kim, J. I. Han, "High performance solution-processed and lithographically patterned zinc–tin oxide thin-film transistors with good operational stability," Electrochem. Solid-State Lett. 12, H256-H258 (2009).
  14. C. G. Lee, A. Dodabalapur, "Solution-processed zinc–tin oxide thin-film transistors with low interfacial trap density and improved performance," Appl. Phys. Lett. 96, (2010) Art. ID 243501.
  15. P. Görrn, M. Lehnhardt, T. Riedl, W. Kowalsky, "The influence of visible light on transparent zinc tin oxide thin film transistors," Appl. Phys. Lett. 91, (2007) Art. ID 193504.
  16. T. Chen, T. C. T. Hsieh, C. Tsai, S. Chen, C. Lin, M. Hung, C. Tu, J. Chang, P. Chen, "Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition," Appl. Phys. Lett. 97, (2010) Art. ID 192103.
  17. F. R. Libsch, J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors," Appl. Phys. Lett. 62, 1286 (1993).
  18. R. B. M. Cross, M. M. De Souza, "Investigating the stability of zinc oxide thin film transistors," Appl. Phys. Lett. 89, (2006) Art. ID 263513.
  19. M. E. Lopes, H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, I. Ferreira, "Gate-bias stress in amorphous oxide semiconductors thin-film transistors," Appl. Phys. Lett. 95, (2009) Art. ID 063502.
  20. P. Liu, Y. Chou, L. Teng, "Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress," Appl. Phys. Lett. 95, (2009) Art. ID 233504.
  21. Y. Jeong, K. Song, D. Kim, C. Y. Koo, J. Moon, "Bias stress stability of solution-processed zinc tin oxide thin-film transistors," J. Electrochem. Soc. 156, H808-H812 (2009).

2010 (5)

P. K. Nayak, T. Busani, E. Elamurugu, P. Barquinha, R. Martins, Y. Hong, E. Fortunato, "Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-$\hbox{k}$ dielectric," Appl. Phys. Lett. 97, (2010) Art. ID 183504.

M. G. Kim, H. S. Kim, Y. G. Ha, J. He, M. G. Kanatzidis, A. Facchetti, T. J. Marks, "High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors," J. Amer. Chem. Soc. 132, 10352-10364 (2010).

A. Olziersky, P. Barquinha, A. Vilà, L. Pereira, G. Gonçalves, E. Fortunato, R. Martins, J. R. Morante, "Insight on the SU-8 resist as passivation layer for transparent $\hbox{Ga}_{2}\hbox{O}_{3}$–$\hbox{In}_{2}\hbox{O}_{3}$–ZnO thin-film transistors," J. Appl. Phys. 108, (2010) Art. ID 064505.

C. G. Lee, A. Dodabalapur, "Solution-processed zinc–tin oxide thin-film transistors with low interfacial trap density and improved performance," Appl. Phys. Lett. 96, (2010) Art. ID 243501.

T. Chen, T. C. T. Hsieh, C. Tsai, S. Chen, C. Lin, M. Hung, C. Tu, J. Chang, P. Chen, "Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition," Appl. Phys. Lett. 97, (2010) Art. ID 192103.

2009 (6)

S. K. Park, Y. H. Kim, H. S. Kim, J. I. Han, "High performance solution-processed and lithographically patterned zinc–tin oxide thin-film transistors with good operational stability," Electrochem. Solid-State Lett. 12, H256-H258 (2009).

P. K. Nayak, J. Jang, C. Lee, Y. Hong, "Effects of Li doping on the performance and environmental stability of solution processed ZnO thin film transistors," Appl. Phys. Lett. 95, (2009) Art. ID 193503.

P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc. 156, H161-H168 (2009).

M. E. Lopes, H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, I. Ferreira, "Gate-bias stress in amorphous oxide semiconductors thin-film transistors," Appl. Phys. Lett. 95, (2009) Art. ID 063502.

P. Liu, Y. Chou, L. Teng, "Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress," Appl. Phys. Lett. 95, (2009) Art. ID 233504.

Y. Jeong, K. Song, D. Kim, C. Y. Koo, J. Moon, "Bias stress stability of solution-processed zinc tin oxide thin-film transistors," J. Electrochem. Soc. 156, H808-H812 (2009).

2008 (3)

C. G. Choi, S. J. Seo, B. S. Bae, "Solution-processed indium-zinc oxide transparent thin-film transistors," Electrochem. Solid-State Lett. 11, H7-H9 (2008).

E. M. C. Fortunato, L. M. N. Pereira, P. M. C. Barquinha, A. M. B. Rego, G. Gonçalves, A. Vilà, J. R. Morante, R. F. P. Martins, "High mobility indium free amorphous oxide thin film transistors," Appl. Phys. Lett. 92, 222103 (2008).

J. S. Park, J. K. Jeong, H. J. Chung, Y. G. Mo, H. D. Kim, "Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water," Appl. Phys. Lett. 92, (2008) Art. ID 072104.

2007 (3)

P. Görrn, M. Lehnhardt, T. Riedl, W. Kowalsky, "The influence of visible light on transparent zinc tin oxide thin film transistors," Appl. Phys. Lett. 91, (2007) Art. ID 193504.

D. Kang, H. Lim, C. Kim, I. Song, J. Park, Y. Park, "Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules," Appl. Phys. Lett. 90, (2007) Art. ID 192101.

D. H. Lee, Y. J. Chang, G. S. Herman, C. H. Chang, "A general route to printable high-mobility transparent amorphous oxide semiconductors," Adv. Mater. 19, 843-847 (2007).

2006 (1)

R. B. M. Cross, M. M. De Souza, "Investigating the stability of zinc oxide thin film transistors," Appl. Phys. Lett. 89, (2006) Art. ID 263513.

2005 (2)

E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, R. F. P. Martins, "Fully transparent ZnO thin-film transistor produced at room temperature," Adv. Mater. 17, 590-594 (2005).

H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler, "High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer," Appl. Phys. Lett. 86, (2005) Art. ID 013503.

1993 (1)

F. R. Libsch, J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors," Appl. Phys. Lett. 62, 1286 (1993).

Adv. Mater. (2)

E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, R. F. P. Martins, "Fully transparent ZnO thin-film transistor produced at room temperature," Adv. Mater. 17, 590-594 (2005).

D. H. Lee, Y. J. Chang, G. S. Herman, C. H. Chang, "A general route to printable high-mobility transparent amorphous oxide semiconductors," Adv. Mater. 19, 843-847 (2007).

Appl. Phys. Lett. (13)

P. K. Nayak, J. Jang, C. Lee, Y. Hong, "Effects of Li doping on the performance and environmental stability of solution processed ZnO thin film transistors," Appl. Phys. Lett. 95, (2009) Art. ID 193503.

D. Kang, H. Lim, C. Kim, I. Song, J. Park, Y. Park, "Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules," Appl. Phys. Lett. 90, (2007) Art. ID 192101.

J. S. Park, J. K. Jeong, H. J. Chung, Y. G. Mo, H. D. Kim, "Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water," Appl. Phys. Lett. 92, (2008) Art. ID 072104.

C. G. Lee, A. Dodabalapur, "Solution-processed zinc–tin oxide thin-film transistors with low interfacial trap density and improved performance," Appl. Phys. Lett. 96, (2010) Art. ID 243501.

P. Görrn, M. Lehnhardt, T. Riedl, W. Kowalsky, "The influence of visible light on transparent zinc tin oxide thin film transistors," Appl. Phys. Lett. 91, (2007) Art. ID 193504.

T. Chen, T. C. T. Hsieh, C. Tsai, S. Chen, C. Lin, M. Hung, C. Tu, J. Chang, P. Chen, "Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition," Appl. Phys. Lett. 97, (2010) Art. ID 192103.

F. R. Libsch, J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors," Appl. Phys. Lett. 62, 1286 (1993).

R. B. M. Cross, M. M. De Souza, "Investigating the stability of zinc oxide thin film transistors," Appl. Phys. Lett. 89, (2006) Art. ID 263513.

M. E. Lopes, H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, I. Ferreira, "Gate-bias stress in amorphous oxide semiconductors thin-film transistors," Appl. Phys. Lett. 95, (2009) Art. ID 063502.

P. Liu, Y. Chou, L. Teng, "Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress," Appl. Phys. Lett. 95, (2009) Art. ID 233504.

E. M. C. Fortunato, L. M. N. Pereira, P. M. C. Barquinha, A. M. B. Rego, G. Gonçalves, A. Vilà, J. R. Morante, R. F. P. Martins, "High mobility indium free amorphous oxide thin film transistors," Appl. Phys. Lett. 92, 222103 (2008).

H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler, "High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer," Appl. Phys. Lett. 86, (2005) Art. ID 013503.

P. K. Nayak, T. Busani, E. Elamurugu, P. Barquinha, R. Martins, Y. Hong, E. Fortunato, "Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-$\hbox{k}$ dielectric," Appl. Phys. Lett. 97, (2010) Art. ID 183504.

Electrochem. Solid-State Lett. (2)

S. K. Park, Y. H. Kim, H. S. Kim, J. I. Han, "High performance solution-processed and lithographically patterned zinc–tin oxide thin-film transistors with good operational stability," Electrochem. Solid-State Lett. 12, H256-H258 (2009).

C. G. Choi, S. J. Seo, B. S. Bae, "Solution-processed indium-zinc oxide transparent thin-film transistors," Electrochem. Solid-State Lett. 11, H7-H9 (2008).

J. Amer. Chem. Soc. (1)

M. G. Kim, H. S. Kim, Y. G. Ha, J. He, M. G. Kanatzidis, A. Facchetti, T. J. Marks, "High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors," J. Amer. Chem. Soc. 132, 10352-10364 (2010).

J. Appl. Phys. (1)

A. Olziersky, P. Barquinha, A. Vilà, L. Pereira, G. Gonçalves, E. Fortunato, R. Martins, J. R. Morante, "Insight on the SU-8 resist as passivation layer for transparent $\hbox{Ga}_{2}\hbox{O}_{3}$–$\hbox{In}_{2}\hbox{O}_{3}$–ZnO thin-film transistors," J. Appl. Phys. 108, (2010) Art. ID 064505.

J. Electrochem. Soc. (2)

P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, "Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc. 156, H161-H168 (2009).

Y. Jeong, K. Song, D. Kim, C. Y. Koo, J. Moon, "Bias stress stability of solution-processed zinc tin oxide thin-film transistors," J. Electrochem. Soc. 156, H808-H812 (2009).

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