This paper reports on hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) processed at 150 °C using plasma-enhanced chemical vapor deposition on polyethylene naphthalate (PEN) transparent plastic substrates. We examine the impact of RF deposition power on film stress of amorphous silicon nitride (a-SiN<sub><i>x</i></sub>:H), and resulting TFT performance. Transistors with the lowest stress nitride, yield the best performance in terms of device mobility (~1.1 cm<sup>2</sup>/V · S), ON/OFF current ratio (~10<sup>10</sup>), and gate leakage current (< 0.1 pA). Stable TFTs are demonstrated with a threshold voltage shift of less than 0.8 V following 10 hours of DC bias stress at 10 V.
© 2011 IEEEPDF Article